Recent Advances in Avalanche Photodiodes

Campbell, Joe C.; Demiguel, S.; Ma, Feng; Beck, A.L.; Guo, Xinjian; Wang, Shuling; Zheng, Xiaoguang; Li, Xiaowei; Beck, Jeff; Kinch, M. A.; Huntington, Andrew S.; Coldren, L.A.; Décobert, J.; Tscherptner, N.

doi:10.1109/jstqe.2004.833971

Cited by 169 publications

(68 citation statements)

References 51 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Impact ionisation process is initiated at high reverse bias in these materials. Evacuation rate of charge carriers from the depletion region is also slow [8][9][10][11][12] . High excess noise factor (F) is reported in Si and III-V based materials due to the involvement of both type of carriers (electrons and holes) in the multiplication process.…”

Section: Iii-v Materials Based Irapdsmentioning

confidence: 99%

“…High excess noise factor (F) is reported in Si and III-V based materials due to the involvement of both type of carriers (electrons and holes) in the multiplication process. Band width is achieved in the range of 300 GHz -400 GHz in III-V APDs [10][11] . Several groups are involved in the development of the advanced APD detector for detection of ultraviolet (UV) light signals [14][15][16][17][18][19] .…”

Section: Iii-v Materials Based Irapdsmentioning

confidence: 99%

“…These are widely used in high speed and space applications. HgCdTe APD is an attractive choice for many IR applications such as LIDAR/ LADAR, defence, night vision, optical communications & atmospheric studies [9][10][11][45][46] . HgCdTe based SWIR APDs can be used as sensor in the LADAR system or 3-D imaging applications 40,[47][48][49][50][51][52][53][54][55][56][57][58][59][60] .…”

Section: Applicationsmentioning

confidence: 99%

“…High gain with low noise and wide bandwidth are vital for imaging applications. Avalanche photodiodes perform the functions of detection and amplification for the attenuated optical signals in the battle field and long range applications, especially in space based thermal imaging applications [1][2][3][4][5][6][7][8][9][10][11][12][13][14] . APD provides high internal gain and fast response time, which are needed to meet the system requirements.…”

Section: Introductionmentioning

confidence: 99%

“…The high dark current and long dead times limit to the Geiger mode APD based LADAR seekers for detection of the incoming signals. The Linear APD has been more beneficial: (i) To find the range information from more than one target in a pixel's instantaneous field of view (FOV) (ii) To detect the target behind debris with low false alarm rate (iii) Can employ thresholding technique to reject dark current when they receive reflected signals, and (iv) Enable to record the signal intensity that is beneficial to increase in the efficiency [8][9][10] . In this paper, the significant results of HgCdTe and III-V based APD detector achieved by the leading group are included.…”

Section: Introductionmentioning

confidence: 99%

See 4 more Smart Citations

Infrared Avalanche Photodiode Detectors

Singh

Pal

2017

Def. Sc. Jl.

View full text Add to dashboard Cite

This study presents on the design, fabrication and characteristics of HgCdTe mid-wave infrared avalanche photodiode (MWIR APD). The gain of 800 at -8 V bias is measured in n + -ν-p + detector array with pitch size of 30 μm. The gain independent bandwidth of 6 MHz is achieved in the fabricated device. This paper also covers the status of HgCdTe and III-V material based IR-APD technology. These APDs having high internal gain and bandwidth are suitable for the detection of attenuated optical signals such as in the battle field conditions/long range imaging in defence and space applications. It provides a combined solution for both detection and amplification if the detector receives a very weak optical signal. HgCdTe based APDs provide high avalanche gain with low excess noise, high quantum efficiency, low dark current and fast response time.

show abstract

Section: Iii-v Materials Based Irapdsmentioning

confidence: 99%

Section: Iii-v Materials Based Irapdsmentioning

confidence: 99%

Section: Applicationsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Infrared Avalanche Photodiode Detectors

Singh

Pal

2017

Def. Sc. Jl.

View full text Add to dashboard Cite

show abstract

Recent Advances of Photodetection Technology Based on Main Group III–V Semiconductors

Ai,

Qin,

Xue

et al. 2024

Adv Funct Materials

View full text Add to dashboard Cite

The rapid advancement of main group III–V nanomaterials endows photodetectors (PDs) with enhanced performance. At present, various III–V nanomaterials are systematically investigated, whereof III–V semiconductors have attracted a successively increased attention that calls for a comprehensive summary which also can define the state‐of‐art for their further development. Herein, this work systematically introduces and discusses key aspects of the field. First, the advanced strategies for the preparation of III–V semiconductor materials and the device structures of the subsequent PDs based on these materials, pristine and doped, are addressed. The focus is then turned to their performance under the irradiation of various wavelengths, separately summarizing and comparing the photodetection properties under infrared, UV and visible light. Finally, challenges and future perspectives of III–V semiconductor‐based PDs are highlighted. This review enlightens the development of III–V semiconductor‐based PDs, and their extended applications for optoelectronic devices in general.

show abstract

Formation of Micro‐Patterned Ga₂O₃/Se Heterojunction and its Application to Highly Sensitive Avalanche Photodiode

Adachi

Kobayashi

2023

Physica Status Solidi (a)

View full text Add to dashboard Cite

Herein, the formation of square‐shaped micropatterns of a Ga2O3/Se heterojunction avalanche photodiode (APD) at an active area of 10 μm × 10 μm and its application to a visible light sensor with high sensitivity by amplification of photocurrent density for the first time are reported. The miniaturization of the Ga2O3/Se APD improves its signal‐to‐noise ratio (SNR) by 10 dB as compared to the expected SNR. This is possible because of the improvement in thermal radiation and reduction in resistance loss. The effects of scaling on the photovoltaic conversion characteristics of Ga2O3/Se and TiO2/Se are investigated by varying the active area from 100 μm × 100 μm to 10 μm × 10 μm using photolithography and etching. A remarkable increase in the external quantum efficiency is observed for miniaturized Ga2O3/Se heterojunction APD at widths smaller than 50 μm × 50 μm by a combination of avalanche amplification and the micro‐scaling effect at a bias voltage of 15 V.

show abstract

Recent Advances in Avalanche Photodiodes

Cited by 169 publications

References 51 publications

Infrared Avalanche Photodiode Detectors

Infrared Avalanche Photodiode Detectors

Recent Advances of Photodetection Technology Based on Main Group III–V Semiconductors

Formation of Micro‐Patterned Ga₂O₃/Se Heterojunction and its Application to Highly Sensitive Avalanche Photodiode

Contact Info

Product

Resources

About

Recent Advances in Avalanche Photodiodes

Cited by 169 publications

References 51 publications

Infrared Avalanche Photodiode Detectors

Infrared Avalanche Photodiode Detectors

Recent Advances of Photodetection Technology Based on Main Group III–V Semiconductors

Formation of Micro‐Patterned Ga2O3/Se Heterojunction and its Application to Highly Sensitive Avalanche Photodiode

Contact Info

Product

Resources

About

Formation of Micro‐Patterned Ga₂O₃/Se Heterojunction and its Application to Highly Sensitive Avalanche Photodiode