Recent Advances in Dynamic Homojunction PIN Diodes Based on 2D Materials

Abstract

The development of electrical and optoelectronic devices that are based on transition metal dichalcogenides require the fabrication of high‐quality homogeneous junctions. This paper demonstrates how to accomplish this using a lateral or vertical 2D material‐based p‐type/intrinsic/n‐type (p–i–n) homojunction. The capacitance across the junction is reduced, which is a result of the continuous band alignments, and there is less carrier entrapment at the homointerface. Various types of p–i–n diodes are examined in order to demonstrate the current modes of transportation and the optoelectronic effects. This review demonstrates how to make a high‐performance homointerface as well as describes the tunneling process in detail, which will be useful in the future development of new electrical and optoelectronic devices. A performance comparison of different parameters is also performed among various doping strategies in order to form homogenous junctions. It is assumed that this summary of the current research on nanomaterials will help 2D materials be used in order to make reliable p–i–n homojunction diodes for low‐power and high‐speed electronics. Finally, this paper concludes by summarizing the current challenges and the current prospects.

Progress in photodetector devices utilizing transition metal dichalcogenides

“…[1][2][3][4][5][6] The developed PD technologies have so far covered a wide range of applications that have a significant impact on our daily lives such as visible light detection for video imaging and digital cameras, ultraviolet (UV) radiation for cell inspection and lithography, X-ray radiation for biomedical imaging, wide-range infrared (IR) detection for night vision, environmental monitoring, optical communication, and quality testing spectroscopy, among others. [7][8][9][10][11][12][13][14][15][16][17][18][19][20] PDs are categorized using several key figures-of-merit such as photogain, quantum efficiency, detectivity, responsivity and others. The related terminologies and characteristics for the PDs are summarized in Fig.…”

Light-emitting devices based on atomically thin MoSe2

“…Among the discovered 2D materials, atomically thin TMDs have sparked many research activities in optoelectronic devices due to their competitive advantages, such as high carrier mobility [98] , unique spin-valley coupling [99] , and tunable band gap [100] . Particularly, some TMDs with direct bandgaps have exhibited significant application prospects for next-generation atomically thin LEDs [101,102] . An LED is normally based on spontaneous emission induced by electrical excitation or driving [98] , in which the structure is often composed of active media (e.g.…”

2D MXene interface engineering for organic solar cells

“…Solar cells can produce electricity for various uses, including lighting up buildings and homes, recharging electronic devices, and powering spacecraft and satellites. [1][2][3][4][5][6] They are also used more frequently with energy storage technologies, such as batteries, to deliver dependable and renewable power constantly. In contrast to conventional inorganic semiconductors, organic materials are used as the active layer in organic solar cells (OSCs).…”