2022
DOI: 10.1002/exp.20210078
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Recent advances in self‐powered and flexible UVC photodetectors

Abstract: Ultraviolet-C (UVC) radiation is employed in various applications, including irreplaceable applications in military and civil fields, such as missile guidance, flame detection, partial discharge detection, disinfection, and wireless communication. Although most modern electronics are based on Si, UVC detection technology remains a unique exception because the short wavelength of UV radiation makes efficient detection with Si difficult. In this review, recent challenges in obtaining ideal UVC photodetectors wit… Show more

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Cited by 34 publications
(19 citation statements)
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“…These parameters are expressed using the corresponding equations: R = (I light − I dark )/P opt S, D* = R/ (2eJ dark ) 0.5 and EQE = Rhc/eλ, where I light is the generated current under UV light, I dark and J dark are the current and current density under dark conditions, respectively, P opt is the incident light intensity, S is the effective area of the PD, e is the fundamental charge, h is the Planck's constant, c is the velocity of the incident light, and λ is the wavelength of irradiation. 31,32 The calculated maximum R, D, and EQE of the self-powered device are 1.285 mA/W, 5.75 × 10 10 Jones, and 0.628%, respectively, under 254 nm illumination, with a power density of 0.085 mW/cm 2 . These parameters depend on P opt when θ is not equal to 1.…”
Section: Resultsmentioning
confidence: 98%
“…These parameters are expressed using the corresponding equations: R = (I light − I dark )/P opt S, D* = R/ (2eJ dark ) 0.5 and EQE = Rhc/eλ, where I light is the generated current under UV light, I dark and J dark are the current and current density under dark conditions, respectively, P opt is the incident light intensity, S is the effective area of the PD, e is the fundamental charge, h is the Planck's constant, c is the velocity of the incident light, and λ is the wavelength of irradiation. 31,32 The calculated maximum R, D, and EQE of the self-powered device are 1.285 mA/W, 5.75 × 10 10 Jones, and 0.628%, respectively, under 254 nm illumination, with a power density of 0.085 mW/cm 2 . These parameters depend on P opt when θ is not equal to 1.…”
Section: Resultsmentioning
confidence: 98%
“…These days, research about HPs-based semiconductors verifies exotic characteristics such as tunable bandgap, fast ion migration, tunable majority carrier, and super-flexibility, proving the potential as the next generation of semiconductor material in electronic devices. [35][36][37][38][39] Our previous works have reported HPs-based resistive switching memory devices operating in ultralow voltage and artificial synaptic devices. [40][41][42][43][44] This characteristic stems from a low activation energy barrier for the movement of vacancies and ions in the halide matrix.…”
Section: Research Articlementioning
confidence: 99%
“…One of these fields is to develop high-performance photodetectors by utilizing cost-effective materials. Additionally, the miniaturization and portability of electronic devices have led to the demand for self-powered photodetection systems capable of operating under passive conditions. , To meet the requirement, harnessing renewable energy from the surroundings has emerged as a potential solution. Among the energy harvesting technologies, one-dimensional (1D) nanostructures have gained prominence due to their simple structure and abundant surface states. , They have shown exceptional performance as photoactive layers, highlighting their potential in photodetection applications. …”
Section: Introductionmentioning
confidence: 99%