Recent advances in the growth of gallium oxide thin films employing various growth techniques—a review

Tak, Bhera Ram; Kumar, Sunil; Kapoor, A. K.; Wang, Danhao; Li, Xiaohang; Sun, Haiding; Singh, Rajendra

doi:10.1088/1361-6463/ac1af2

Cited by 97 publications

(71 citation statements)

References 256 publications

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“…The shoulder of ε-Ga2O3 at the diffraction peak along (-402), corresponding to β-Ga2O3 at 2θ = 38.12°, disappeared in the annealed Ga2O3 film at 800 °C, while a diffraction peak along (0002) remained at 2θ = 19.10°, corresponding to ε-Ga2O3. The metastable εphase transformed into the thermodynamically stable β-phase within the range of 700-800 °C [3,12,29,30]. The intensities of the diffraction peaks along (-201), (-402), and (-603) increased with an increase in temperature, as shown in Figure 2a.…”

Section: Resultsmentioning

confidence: 90%

Magnetron Sputter-Deposited β-Ga2O3 Films on c-Sapphire Substrate: Effect of Rapid Thermal Annealing Temperature on Crystalline Quality

Pech

Kim

2022

Coatings

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Gallium oxide (Ga2O3) is a semiconductor with a wide bandgap of ~5.0 eV and large breakdown voltages (>8 MV·cm−1). Among the crystal phases of Ga2O3, the monoclinic β-Ga2O3 is well known to be suitable for many device applications because of its chemical and thermal stability. The crystalline quality of polycrystalline β-Ga2O3 films on c-plane sapphire substrates was studied by rapid thermal annealing (RTA) following magnetron sputtering deposition at room temperature. Polycrystalline β-Ga2O3 films are relatively simple to prepare; however, their crystalline quality needs enhancement. The β-phase was achieved at 900 °C with a crystallite size and d-spacing of 26.02 and 0.2350 nm, respectively, when a mixture of ε- and β-phases was observed at temperatures up to 800 °C. The strain was released in the annealed Ga2O3 films at 900 °C; however, the clear and uniform orientation was not perfect because of the increased oxygen vacancy in the film at that temperature. The improved polycrystalline β-Ga2O3 films with dominant (−402)-oriented crystals were obtained at 900 °C for 45 min under a N2 gas atmosphere.

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Section: Resultsmentioning

confidence: 90%

Magnetron Sputter-Deposited β-Ga2O3 Films on c-Sapphire Substrate: Effect of Rapid Thermal Annealing Temperature on Crystalline Quality

Pech

Kim

2022

Coatings

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“…Due to the high growth rate and lack of stacking fault and twin boundary defects during growth, edge-defined film-fed (EFG) techniques have become quite mature to produce large size β-Ga 2 O 3 single crystals. Furthermore, a high-quality n-type β-Ga 2 O 3 epilayer can be grown using a variety of techniques, including metal–organic chemical vapor deposition (MOCVD), halide vapor phase epitaxy (HVPE), and molecular-beam epitaxy (MBE) with controllable doping using shallow donors, Si, Ge, and Sn, in the range of 10 15 to 10 20 cm –3 . − …”

Section: Introductionmentioning

confidence: 99%

A Comprehensive Review on Recent Developments in Ohmic and Schottky Contacts on Ga₂O₃ for Device Applications

Sheoran

Kumar

Singh

2022

ACS Appl. Electron. Mater.

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Ultrawide bandgap β-gallium oxide (β-Ga2O3) is emerging as a viable candidate for next-generation high-power electronics, including Schottky barrier diodes (SBDs) and field-effect transistors (FETs). This is due to its excellent material properties such as ultrawide bandgap of 4.6–4.9 eV, high breakdown electric field of 8 MV/cm, very high Baliga’s figure of merit (BFOM) and mature technology for large bulk single crystals, and epitaxial techniques with controllable n-type doping. Ohmic and rectifying metal–semiconductor contacts on β-Ga2O3 have been developed over the past decade. This work comprehensively reviews the recent development of metal–semiconductor contacts on β-Ga2O3. We start with basic concepts of metal–semiconductor contacts, which is followed by summarizing the current literature on ohmic and Schottky contacts on β-Ga2O3. Finally, the status of high-power Schottky diode contact on β-Ga2O3 is presented.

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“…A variety of electronic and optoelectronic devices such as Schottky barrier diodes (SBDs) [ 5 , 6 ] and FETs, including MESFETs, MOSFETs, MODFETs, and HEMTs [ 6 , 7 , 8 , 9 ] based on Ga 2 O 3 bulk single crystals, thin films, and nanostructured materials, have been achieved thanks to the advance in growth and characterization technologies and the unique properties of Ga 2 O 3 . There have been tens of review articles [ 5 , 6 , 7 , 8 , 9 , 10 , 11 , 12 , 13 , 14 , 15 , 16 , 17 , 18 , 19 , 20 , 21 , 22 , 23 , 24 , 25 , 26 , 27 , 28 , 29 , 30 , 31 , 32 , 33 , 34 , 35 , 36 , 37 , 38 , 39 , 40 ] concerning Ga 2 O 3 that cover the growth techniques, the physical and chemical properties, and the state-of-the-art device fabrications. Although initial studies on the gas-sensing properties of Ga 2 O 3 thin films were launched by Fleischer and Meixner [ 41 , 42 ] in the early 1990s, few review papers on Ga 2 O 3 -based gas sensors exist in the literature.…”

Section: Introductionmentioning

confidence: 99%

Gallium Oxide for Gas Sensor Applications: A Comprehensive Review

Zhu

et al. 2022

Materials

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Ga2O3 has emerged as a promising ultrawide bandgap semiconductor for numerous device applications owing to its excellent material properties. In this paper, we present a comprehensive review on major advances achieved over the past thirty years in the field of Ga2O3-based gas sensors. We begin with a brief introduction of the polymorphs and basic electric properties of Ga2O3. Next, we provide an overview of the typical preparation methods for the fabrication of Ga2O3-sensing material developed so far. Then, we will concentrate our discussion on the state-of-the-art Ga2O3-based gas sensor devices and put an emphasis on seven sophisticated strategies to improve their gas-sensing performance in terms of material engineering and device optimization. Finally, we give some concluding remarks and put forward some suggestions, including (i) construction of hybrid structures with two-dimensional materials and organic polymers, (ii) combination with density functional theoretical calculations and machine learning, and (iii) development of optical sensors using the characteristic optical spectra for the future development of novel Ga2O3-based gas sensors.

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Recent advances in the growth of gallium oxide thin films employing various growth techniques—a review

Abstract: R. (2021). Recent advances in the growth of gallium oxide thin films employing various growth techniques-A review.

Cited by 97 publications

References 256 publications

Magnetron Sputter-Deposited β-Ga2O3 Films on c-Sapphire Substrate: Effect of Rapid Thermal Annealing Temperature on Crystalline Quality

Magnetron Sputter-Deposited β-Ga2O3 Films on c-Sapphire Substrate: Effect of Rapid Thermal Annealing Temperature on Crystalline Quality

A Comprehensive Review on Recent Developments in Ohmic and Schottky Contacts on Ga₂O₃ for Device Applications

Gallium Oxide for Gas Sensor Applications: A Comprehensive Review

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Recent advances in the growth of gallium oxide thin films employing various growth techniques—a review

Abstract: R. (2021). Recent advances in the growth of gallium oxide thin films employing various growth techniques-A review.

Cited by 97 publications

References 256 publications

Magnetron Sputter-Deposited β-Ga2O3 Films on c-Sapphire Substrate: Effect of Rapid Thermal Annealing Temperature on Crystalline Quality

Magnetron Sputter-Deposited β-Ga2O3 Films on c-Sapphire Substrate: Effect of Rapid Thermal Annealing Temperature on Crystalline Quality

A Comprehensive Review on Recent Developments in Ohmic and Schottky Contacts on Ga2O3 for Device Applications

Gallium Oxide for Gas Sensor Applications: A Comprehensive Review

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A Comprehensive Review on Recent Developments in Ohmic and Schottky Contacts on Ga₂O₃ for Device Applications