2024
DOI: 10.1002/sstr.202300511
|View full text |Cite
|
Sign up to set email alerts
|

Recent Advances in the Growth Strategies, Multifunctional Properties, and Emerging Applications of Two‐Dimensional Non‐van der Waals Bismuth Oxychalcogenides and Prospective Heterostructures

Md Tarik Hossain,
Tadasha Jena,
P. K. Giri

Abstract: With the advent of two‐dimensional (2D) van der Waals (vdW) materials, many non‐van der Waals (nvdW) materials have been synthesized and are being exploited for novel applications. Bismuth oxychalcogenides (Bi2O2X; X is S, Se, Te), a nvdW series with moderate band gap semiconductors, possess high carrier mobility and air stability. The layers in Bi2O2X stay with a formal bond, giving rise to distinct structural, optical, thermal, and electronic properties different from conventional vdW materials. Herein, thes… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
4
1

Citation Types

0
8
0

Year Published

2024
2024
2024
2024

Publication Types

Select...
7
1

Relationship

0
8

Authors

Journals

citations
Cited by 12 publications
(8 citation statements)
references
References 175 publications
0
8
0
Order By: Relevance
“…Consequently, all these modes are observed to have frequencies below 600 cm −1 . 73 The redshift of the phonon modes in a crystal indicates the sensitivity of the cation distribution to changes in temperature. This phenomenon highlights the intricate connection between the crystal's atomic arrangement and vibrational properties.…”
Section: Resultsmentioning
confidence: 99%
“…Consequently, all these modes are observed to have frequencies below 600 cm −1 . 73 The redshift of the phonon modes in a crystal indicates the sensitivity of the cation distribution to changes in temperature. This phenomenon highlights the intricate connection between the crystal's atomic arrangement and vibrational properties.…”
Section: Resultsmentioning
confidence: 99%
“…Photodetection applications of Bi 2 O 2 X materials are becoming a pretty exciting domain for many researchers nowadays. 27 Recent theoretical research on the thermodynamics of growth in the Bi 2 O 2 X family has highlighted the significant challenge in synthesizing stable Bi 2 O 2 Te, primarily due to various binary phases and a narrow window of chemical potential. 28 Researchers have found the preparation of Bi 2 O 2 Te to be a challenging task.…”
Section: Introductionmentioning
confidence: 99%
“…A new type of quasi-2D semiconducting material called bismuth oxychalcogenides (Bi 2 O 2 X, where X = S, Se, Te) has recently drawn the interest of the scientific community. These materials’ unique structure, exceptional air stability, excellent electronic properties, ultrahigh electron mobility, low thermal conductivity, ferroelectric/ferro elastic properties, and robust spin–orbit coupling have created significant interest in the electronic industry and fundamental research. Amidst the family of bismuth oxychalcogenides, Bi 2 O 2 Se has gotten much attention recently, both experimentally and theoretically, due to its excellent air stability, high carrier mobility, quantum transport behavior, and good photoelectric performance. Another member of the family Bi 2 O 2 Te with its potential to exhibit a range of intriguing properties, such as smaller effective mass, increased spin–orbit coupling, and ferroelectric behavior under in-plane stress, suggests that it may offer rich physics compared to Bi 2 O 2 Se. However, its exploration is lacking due to the unavailability of efficient methods for achieving the growth of stoichiometrically stable Bi 2 O 2 Te. Photodetection applications of Bi 2 O 2 X materials are becoming a pretty exciting domain for many researchers nowadays . Recent theoretical research on the thermodynamics of growth in the Bi 2 O 2 X family has highlighted the significant challenge in synthesizing stable Bi 2 O 2 Te, primarily due to various binary phases and a narrow window of chemical potential …”
Section: Introductionmentioning
confidence: 99%
“…Several parameters are involved in actual energy conversion efficiency, known as the thermoelectric figure of merit (ZT). In the formula ZT = S 2 •σ•T κ , S, σ, T, and κ represent the Seebeck coefficient, electrical conductivity, absolute temperature, and thermal conductivity [3]. Theoretically, the carrier concentration affects the parameters influencing the ZT value.…”
Section: Introductionmentioning
confidence: 99%