2D materials showcase numerous distinct optical and electronic
characteristics that are incredibly essential for implementation in
optoelectronic devices. In the past few years, photodetectors have
been a significant focus because of their diverse applications. The
challenge lies in developing environmentally friendly materials to
fabricate cost-effective, high-performance devices. Bismuth oxychalcogenide
nanosheets (Bi2O2X, X = S, Se, Te) in their
2D form, due to their impressive theoretical and experimental characteristics,
have become promising alternatives for potential applications in optoelectronic
devices. One of its most common oxide phases, i.e., Bi2O5Te, also possesses quite interesting nonlinear optical,
photorefractive, and many other physical properties, which have yet
to be explored. Here, this study reports the photodetectors based
on 2D Bi2O5Te nanomaterials prepared using a
“microwave-assisted method,” an exciting choice for
synthesizing such nanomaterials in bulk. The basic characterizations
confirmed the sample’s phase and presence of constituent elements,
whereas microscopic studies demonstrated its 2D layered nature. Verification
of different bonds between the atoms is observed in the Raman studies.
Optical studies represent the band edges of the samples between 400
to 600 nm, which is significant as it is useful in optoelectronic
devices such as solar cells, LEDs, and photodetectors. The band gaps
of the materials appeared to be in the 2.72 to 2.95 eV range. Centers
of the broad photoluminescence spectra are obtained around 650–700
nm, which suggests the optoelectronics applicability of the material.
Figures of merits such as sensitivity, responsivity, and detectivity
values are obtained from the photodetection measurements. Time-dependent
photoresponse characteristics show a high I
on/I
off ratio, which is quite impressive
for fabricating highly sensitive photodetectors.