Recent Advances in Transfer‐Free Synthesis of High‐Quality Graphene

Abstract

High‐quality graphene obtained by chemical vapor deposition (CVD) technique holds significant importance in constructing innovative electronic and optoelectronic devices. Direct growth of graphene over target substrates readily eliminates cumbersome transfer processes, offering compatibility with practical application scenarios. Recent years have witnessed growing strategic endeavors in the preparation of transfer‐free graphene with favorable quality; nevertheless, timely review articles in this realm are still lacking. In this contribution, we present a systematic summary of recent advances in transfer‐free synthesis of high‐quality graphene on insulating substrates, with a focus on discussing synthetic strategies designed by elevating reaction temperature, confining gas flow, introducing growth promotor and regulating substrate surface.

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“…Graphene and its derivatives have been employed as a chemical modifier of electrodes in the development of electroanalytical methods, owing to its large their remarkable properties, including a good electrical conductivity and flexibility of operation. 13 Some methods have been developed to obtain graphene, such as chemical vapor deposition, 14 mechanically exfoliation, 15 chemical exfoliation of graphite by the Hummers' method, 16 the reduction of graphene oxide 17 and the reduction and exfoliation of graphite oxide by microwave. 18 In this context, a new method to produce graphene from polymeric materials using a photothermal conversion of sp 3 -carbon atoms to sp 2 -carbon atoms by laser irradiation has been reported.…”