Recent Advances on Pulsed Laser Deposition of Large‐Scale Thin Films

Abstract

Abstract2D thin films, possessing atomically thin thickness, are emerging as promising candidates for next‐generation electronic devices, due to their novel properties and high performance. In the early years, a wide variety of 2D materials are prepared using several methods (mechanical/liquid exfoliation, chemical vapor deposition, etc.). However, the limited size of 2D flakes hinders their fundamental research and device applications, and hence the effective large‐scale preparation of 2D films is still challenging. Recently, pulsed laser deposition (PLD) has appeared to be an impactful method for wafer‐scale growth of 2D films, owing to target‐maintained stoichiometry, high growth rate, and efficiency. In this review, the recent advances on the PLD preparation of 2D films are summarized, including the growth mechanisms, strategies, and materials classification. First, efficacious strategies of PLD growth are highlighted. Then, the growth, characterization, and device applications of various 2D films are presented, such as graphene, h‐BN, MoS2, BP, oxide, perovskite, semi‐metal, etc. Finally, the potential challenges and further research directions of PLD technique is envisioned.

Tuning the Optoelectronic Properties of Pulsed Laser Deposited “3D”‐MoS2 Films via the Degree of Vertical Alignment of Their Constituting Layers

“…[11] Although it permits to access MoS 2 flakes with interesting optical and electrical properties, the mechanical exfoliation does not, however, allow precise control of the thickness and uniformity of the exfoliated sample. [12,13] Moreover, the size of the exfoliated samples remains very small and insufficient for real applications. [14] Alternatively, chemical exfoliation-based on Li intercalation was proposed, [15] and shown to achieve relatively larger sample sizes.…”

“…Thus, the use of physical vapor deposition (PVD) techniques, such as PLD, has been shown to be successful for the growth of a variety of thin films with complex stoichiometry and highly attractive properties over large-size substrates. [13,[24][25][26][27] Indeed, by combining concomitant rotations of both target and substrate holder along with laser beam sweeping, uniform thin films (e.g., MoS 2 , Tungsten disulfide, and reduced graphene oxide) have been deposited over large-area substrates (up to 4″-diam. wafers), with a fairly controllable thickness (from few to 100s nm), composition and crystalline structure.…”

“…wafers), with a fairly controllable thickness (from few to 100s nm), composition and crystalline structure. [13,[28][29][30][31] Moreover, the PLD is well known for its large process latitude where different growth parameters (such as laser intensity, deposition temperature (T d ), background pressure, number of laser ablation pulses (N LP ), etc.) can be quasi-independently controlled to deposit high-quality thin films with various structures and morphologies.…”