2000
DOI: 10.1016/s0257-8972(00)00566-1
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Recent aspects concerning DC reactive magnetron sputtering of thin films: a review

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Cited by 459 publications
(166 citation statements)
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“…For tribological and hard coating applications, the coating must possess good wear resistance, high hardness resistance and corrosion resistant properties, as reported in the literature [1][2][3][4][5][6][7][8]. To deposit the hard coating, sputtering is normally used from the available processes because of its high deposition rate, thin compound nature with controlled stoichiometry, simplicity and cost-effectiveness compared to the radio frequency (RF) system.…”
Section: Introductionmentioning
confidence: 99%
“…For tribological and hard coating applications, the coating must possess good wear resistance, high hardness resistance and corrosion resistant properties, as reported in the literature [1][2][3][4][5][6][7][8]. To deposit the hard coating, sputtering is normally used from the available processes because of its high deposition rate, thin compound nature with controlled stoichiometry, simplicity and cost-effectiveness compared to the radio frequency (RF) system.…”
Section: Introductionmentioning
confidence: 99%
“…3 Development of the structure in the~1,000 nm thick transparent TiO 2 films reactively sputtered on unheated glass substrates at I da1,2 = 3 A, d s-t = 100 mm and T surf % 160-180°C, p T = 0.9 Pa and p O2 = 0.15 Pa with increasing f r film together with desired oxygen partial pressure p O2 . In this case the total flow rate of sputtering gas mixture / T = / Ar + / O2 exceeds a critical value given by the pumping speed of the system, which results in a slower system response leading to instabilities in a closed control circuit [26,27]. The closed control loop is discussed in detail in Ref.…”
Section: Effect Of Oxygen Partial Pressure P O2mentioning
confidence: 99%
“…Aluminum nitride has a variety of excellent physical properties, such as a high melting point (3273 K), high thermal conductivity (285 W/mK), high direct band gap (6.2 Ev), good dielectric constant (8.5) and high hardness (about ~ 2×103 kgf mm-2) [13,14,15]. Common ways of depositing aluminum nitride films include DC and RF magnetron sputtering [13][14][15][16][17][18], chemical vapor deposition [19,20], and molecular beam epitaxy [21]. However, the CVD and MBE methods can only be used at high temperatures, and this limits the base materials that can be used, and if the resulting grains are too big then this will lead to a rough surface, and so it will not be possible to easily manufacture electrodes on the films.…”
Section: Introductionmentioning
confidence: 99%