The new layered compound CsHgInS 3 was synthesized using solid state and flux synthesis techniques. The compound is a semiconductor and shows promising properties for X-ray and γray detection. It features a layered structure that crystallizes in the monoclinic space group C2/c with cell parameters: a = 11.2499(7) Å ́, b = 11.2565(6) Å ́, c = 22.146(1) Å ́, β = 97.30(5)°, V = 2781.8(4) Å 3, and Z = 8. CsHgInS 3 is isostructural to Rb 2 Cu 2 Sn 2 S 6 , where the Hg, In, and Cs atoms occupy the Cu, Sn, and Rb sites, respectively. Large single crystals with dimension up to 5 mm were grown with a vertical Bridgman method as well as a horizontal traveling heater method. CsHgInS 3 has a γ-ray attenuation length comparable to commercial Cd 1−x Zn x Te and a band gap value of 2.30 eV. The electrical resistivity of CsHgInS 3 is anisotropic with values of 98 GΩ cm and 0.33 GΩ cm perpendicular and parallel to the (001) plane, respectively. The mobility-lifetime product (μτ) of electrons and holes estimated from photoconductivity measurements on the as-grown crystals were (μτ) e = 3.6 × 10 −5 cm 2 V −1 and (μτ) h = 2.9 × 10 −5 cm 2 V −1 , respectively. Electronic structure calculations at the Density Functional Theory level were performed based on the refined crystal structure of CsHgInS 3 and show a direct gap with the conduction band near the Fermi level being highly dispersive, suggesting a relatively small carrier effective mass for electrons.