1994
DOI: 10.1007/978-3-642-79255-7_9
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Cited by 3 publications
(3 citation statements)
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“…While the process without illumination causes the growth of some dispersed particles in the range 50-150 nm (figure 4 Those charge carriers which emerge from illumination and are created in the sub-surface space charge region experience a strong electric field (an electrostatic potential barrier exists in the space charge region) which tends to separate the electron and the hole. As the bands bend downwards for p-type material, the electrons move toward the surface and the holes move away [34]. Now these electrons can improve the electroless process.…”
Section: Resultsmentioning
confidence: 99%
“…While the process without illumination causes the growth of some dispersed particles in the range 50-150 nm (figure 4 Those charge carriers which emerge from illumination and are created in the sub-surface space charge region experience a strong electric field (an electrostatic potential barrier exists in the space charge region) which tends to separate the electron and the hole. As the bands bend downwards for p-type material, the electrons move toward the surface and the holes move away [34]. Now these electrons can improve the electroless process.…”
Section: Resultsmentioning
confidence: 99%
“…Distortions caused by dynamic effects can be seen in figure 2, which shows experimental images of highly oriented pyrolytic graphite (HOPG), a standard sample used in the study of STMs. It is noted that the HOPG image has a hexagonal lattice structure with a regular atomic separation of 2.46 Å [21], as seen in figure 2(a). Furthermore, the positions of carbon atoms on the surface of the HOPG sample do not change with respect to STM-probe position and are relatively insensitive to variations in operating conditions such as temperature [11,22].…”
Section: Distortions In Stm Images Caused By Dynamic Effectsmentioning
confidence: 95%
“…In particular, the employment of scanning probe microscopies (SPM) has extended our knowledge significantly on the respective thin film properties, such as structure, morphology and growth kinetics, during the past decades [12][13][14]. The use of refractory (W, Mo, Re) or at least high-melting point metal surfaces (Pt, Ir, Rh, Ru) as substrates for thin film deposition has the advantage that the deposited material can be conveniently removed by thermal desorption.…”
Section: Introductionmentioning
confidence: 99%