Recent developments in Ge dots grown on pit‐patterned surfaces

Karmous, A.; Fischer, I. A.; Kirfel, O.; Mattes, Johannes; Oehme, Michael; Werner, Jérémie; Schulze, Jörg

doi:10.1002/pssb.201100779

Cited by 4 publications

(3 citation statements)

References 64 publications

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“…The dots are 5.5 nm high (shown at fig. 8) and the areal dot density is 1.2×10 12 which is the highest ever achieved in ordered Ge QD system. And the Si spacer is achieved as thin as 2.5 nm [48], which is the range of strong coupling regime and can help for the expending electronic states or even mini-band.…”

Section: Exp( / )mentioning

confidence: 86%

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Advance in the Fabrication of Ordered Ge/Si Nanostructure Array on Si Patterned Substrate by Nanosphere Lithography

Xin¹,

Wang²,

Qiu³

et al. 2016

MSF

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The recent process in the fabrication of the ordered Ge/Si quantum dots (QDs) is reviewed. The fabrication step generally started on the preparation of patterned substrate prepared in advance by using several interesting methods, such as photo lithography, focus ion beam (FIB), reactive ion etching (RIE), and extreme ultraviolet lithography (EUV-IL) et al, which are introduced briefly in this article. Here, we’d like to focus on the detailed process of nanosphere lithography (NSL) which has the advantages of less cost and higher product compared with the referred methods. The ordered Ge nanostructures always show as Hexagonal close-packed array on the patterned Si substrate and have the advantages of potential applications in electronic and optoelectronic devices.

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Section: Exp( / )mentioning

confidence: 86%

“…This depends on the chosen parameters in the growth process [10,11]. The random nucleating and size fluctuating of dots degrade the optoelectronic device performance [12]. Several novelty techniques have been proposed to fix these problems.…”

Section: Introductionmentioning

confidence: 99%

Advance in the Fabrication of Ordered Ge/Si Nanostructure Array on Si Patterned Substrate by Nanosphere Lithography

Xin¹,

Wang²,

Qiu³

et al. 2016

MSF

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“…Semiconductor nanostructures to confine carrier motion in reduced dimensions have been investigated extensively. In particular, confinement of carriers in Ge nanostructures in a Si matrix has a large influence on electronic and optical properties [1]; this can be used as a light source or photodetector in a silicon-based optoelectronic integrated circuit. Room temperature photoluminescence of Ge selfassembly quantum dots has been reported by using Si microdisk resonators [2].…”

Section: Introductionmentioning

confidence: 99%

Optimal growth of Ge-rich dots on Si(001) substrates with hexagonal packed pit patterns

Huangfu¹,

Wang²,

Xia³

et al. 2012

Nanotechnology

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This paper reports a three-step method to fabricate hexagonal ordered Ge dots on Si with controllable size and spacing. After the introduction of a thin Si dioxide layer on the Si substrate, porous alumina turns out to be a good candidate for pattern transferring, which is rapid and simple to implement. A density-temperature relation for Ge dots has been discovered in this work; the Arrhenius relation with a slope of 0.33 is proved to be applicable for predicting the optimal temperature for a certain density of patterns. Different widths of pits are also studied to discover the dependence of the dot distribution on the pit morphology. The optimal pit width for ordered Ge dots is around 30 nm, while four aligned Ge dots can be achieved in a 70 nm pit. Extremely high Ge content (>0.92) in capped Ge dots is discovered by Raman characterization because the high density of pits leads to a low enough optimal temperature of 430 °C. The photoluminescence spectra of the capped dots also prove the high purity and quality of the Ge dots.

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Recipes for the fabrication of strictly ordered Ge islands on pit-patterned Si(001) substrates

et al. 2013

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We identify the most important parameters for the growth of ordered SiGe islands on pit-patterned Si(001) substrates. From a multi-dimensional parameter space we link individual contributions to isolate their influence on ordered island growth. This includes the influences of: the pit size, pit depth and pit period on the Si buffer layer and subsequent Ge growth; the pit sidewall inclination on Ge island growth; the amount of Ge on island morphologies as well as the influences of the pit-size homogeneity, the pit period, the Ge growth temperature and rate on island formation. We highlight that the initial pit shape and pit size in combination with the growth conditions of the Si buffer layer should be adjusted to provide suitable preconditions for the growth of Ge islands with the desired size, composition and nucleation position. Furthermore, we demonstrate that the wetting layer between pits can play the role of a stabilizer that inhibits shape transformations of ordered islands. Thus, dislocation formation within islands can be delayed, uniform arrays of one island type can be fabricated and secondary island nucleation between pits can be impeded. These findings allow us to fabricate perfectly ordered and homogeneous Ge islands on one and the same sample, even if the pit period is varied from a few hundred nanometres to several micrometres.

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Recent developments in Ge dots grown on pit‐patterned surfaces

Cited by 4 publications

References 64 publications

Advance in the Fabrication of Ordered Ge/Si Nanostructure Array on Si Patterned Substrate by Nanosphere Lithography

Advance in the Fabrication of Ordered Ge/Si Nanostructure Array on Si Patterned Substrate by Nanosphere Lithography

Optimal growth of Ge-rich dots on Si(001) substrates with hexagonal packed pit patterns

Recipes for the fabrication of strictly ordered Ge islands on pit-patterned Si(001) substrates

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