Recent developments in nanostructured materials for high-performance thermoelectrics

Vaqueiro, Paz; Powell, Anthony V.

doi:10.1039/c0jm01193b

Cited by 171 publications

(123 citation statements)

References 53 publications

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“…To reach high electrical conductivity, a high carrier concentration is desirable; however, it often degenerates the Seebeck coefficient of materials as governed by Eq. [23]. The electrical conductivity of ideal TE materials is usually on the order of 10 3 (S/cm); however, the electrical conductivity of metal oxides is often lower, on the order of 10-10 2 (S/cm).…”

Section: Fundamental Physics Of Thermoelectric Metal Oxidesmentioning

confidence: 99%

Metal oxides for thermoelectric power generation and beyond

Feng

Jiang

Ghafari

et al. 2017

Adv Compos Hybrid Mater

119

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Metal oxides are widely used in many applications such as thermoelectric, solar cells, sensors, transistors, and optoelectronic devices due to their outstanding mechanical, chemical, electrical, and optical properties. For instance, their high Seebeck coefficient, high thermal stability, and earth abundancy make them suitable for thermoelectric power generation, particularly at a high-temperature regime. In this article, we review the recent advances of developing high electrical properties of metal oxides and their applications in thermoelectric, solar cells, sensors, and other optoelectronic devices. The materials examined include both narrow-band-gap (e.g., Na x CoO 2 , Ca 3 Co 4 O 9 , BiCuSeO, CaMnO 3 , SrTiO 3 ) and wide-band-gap materials (e.g., ZnO-based, SnO 2 -based, In 2 O 3 -based). Unlike previous review articles, the focus of this study is on identifying an effective doping mechanism of different metal oxides to reach a high power factor. Effective dopants and doping strategies to achieve high carrier concentration and high electrical conductivities are highlighted in this review to enable the advanced applications of metal oxides in thermoelectric power generation and beyond.

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Section: Fundamental Physics Of Thermoelectric Metal Oxidesmentioning

confidence: 99%

Metal oxides for thermoelectric power generation and beyond

Feng

Jiang

Ghafari

et al. 2017

Adv Compos Hybrid Mater

119

View full text Add to dashboard Cite

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“…The small size of these hot spots and their inaccessibility make it difficult to maintain a low and safe operating temperature (1). Solid-state integrated active thermoelectric coolers could solve the long-lasting electronic cooling problem (2,3). These coolers are designed to actively pump heat in its natural flow direction, from the hot spots generated on the chip to the colder ambient reservoir.…”

Section: ·Kmentioning

confidence: 99%

High thermoelectricpower factor in graphene/hBN devices

Duan

Wang

Lai

et al. 2016

Proc. Natl. Acad. Sci. U.S.A.

145

133

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Fast and controllable cooling at nanoscales requires a combination of highly efficient passive cooling and active cooling. Although passive cooling in graphene-based devices is quite effective due to graphene's extraordinary heat conduction, active cooling has not been considered feasible due to graphene's low thermoelectric power factor. Here, we show that the thermoelectric performance of graphene can be significantly improved by using hexagonal boron nitride (hBN) substrates instead of SiO 2 . We find the room temperature efficiency of active cooling in the device, as gauged by the power factor times temperature, reaches values as high as 10.35 W·m , in MoS 2 . We further show that the Seebeck coefficient provides a direct measure of substrate-induced random potential fluctuations and that their significant reduction for hBN substrates enables fast gate-controlled switching of the Seebeck coefficient polarity for applications in integrated active cooling devices.graphene | Seebeck coefficient | thermoelectric power factor | electron-hole puddles | screened Coulomb scattering

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“…Very recently, the compound SnSe has been reported to exhibit exceptionally good thermoelectric properties at high temperatures above ∼800 K, including a very low thermal conductivity [1]. Nanostructuring of materials has been pursued extensively in recent years as a possible route towards achieving a sufficiently low thermal conductivity [2,3,4], but the discovery of extremely low thermal conductivity in bulk SnSe has markedly improved the prospects of obtaining bulk thermoelectrics suitable for general commercial applications. As SnSe consists only of Earthabundant elements of comparatively low toxicity, it represents also an important advance in avoiding toxic and rare elements like lead and tellurium in thermoelectric materials.…”

Section: Introductionmentioning

confidence: 99%

Structural changes in thermoelectric SnSe at high pressures

Loa

Husband

Downie

et al. 2015

J. Phys.: Condens. Matter

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Abstract. The crystal structure of the thermoelectric material tin selenide has been investigated with angle-dispersive synchrotron x-ray powder diffraction under hydrostatic pressure up to 27 GPa. With increasing pressure, a continuous evolution of the crystal structure from the GeS type to the higher-symmetry TlI type was observed, with a critical pressure of 10.5(3) GPa. The orthorhombic high-pressure modification, β -SnSe, is closely related to the pseudo-tetragonal high-temperature modification at ambient pressure. The similarity between the changes of the crystal structure at elevated temperatures and at high pressures suggests the possibility that strained thin films of SnSe may provide a route to overcoming the problem of the limited thermal stability of β-SnSe at high temperatures.

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Recent developments in nanostructured materials for high-performance thermoelectrics

Cited by 171 publications

References 53 publications

Metal oxides for thermoelectric power generation and beyond

Metal oxides for thermoelectric power generation and beyond

High thermoelectricpower factor in graphene/hBN devices

Structural changes in thermoelectric SnSe at high pressures

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