Recent developments of quantum sensing under pressurized environment using the nitrogen vacancy (NV) center in diamond

Ho, Kin On; Wong, Kwok-Chuen; Leung, Man Yin; Pang, Yiu Yung; Leung, Wai Kuen; Yip, King Yau; Zhang, Wei; Xie, Jianyu; Goh, Swee K.; Yang, Sen

doi:10.1063/5.0052233

Cited by 18 publications

(9 citation statements)

References 83 publications

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“…The 4H-SiC micrometer particle with VSi defects 41 and other types of spin qubit including divacancy 15,16,42 , NV center [24][25][26] and even transition metal ions 43 in 4H, 6H and 3C polytypes of SiC may also be applied to local magnetic detection at high pressure. Some types of novel spin readout technologies such as photocurrent detected magnetic resonance 44,45 and anti-Stokes excited ODMR technology 29 can also be used for VSi defects-based magnetic sensing under high pressure. The experiments form a framework for using SiC VSi defects in the local in situ magnetic detection under high pressure.…”

Section: Discussionmentioning

confidence: 99%

Magnetic detection under high pressures using designed silicon vacancy centers in silicon carbide

Wang

Liu

et al. 2022

Preprint

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Pressure is a significant parameter to investigate the properties of matter. The phenomenon of pressure-induced magnetic phase transition has attracted great interest due to its ability to detect superconducting behaviour at high pressures in diamond anvil cell. However, detection of the local sample magnetic properties is a great challenge due to the small sample chamber volume. Recently, in situ pressure-induced phase transition has been detected using optically detected magnetic resonance (ODMR) method of the nitrogen vacancies (NV) centers in diamond. However, the NV centers with four orientation axes and temperature-dependent zero-field-splitting present some difficulty to interpret the observed ODMR spectra. Here, we investigate and characterize the optical and spin properties of the implanted silicon vacancy defects in 4H-SiC, which is single-axis and temperature-independent zero-field-splitting. Using this technique, we observe the magnetic phase transition of a magnetic Nd2Fe14B sample at about 7 GPa. Finally, the critical temperature-pressure phase diagram of the superconductor YBa2Cu3O6.66 is mapped and refined. These experiments pave the way for the silicon vacancy-based quantum sensor being used in situ magnetic detection at high pressures.

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Section: Discussionmentioning

confidence: 99%

Magnetic detection under high pressures using designed silicon vacancy centers in silicon carbide

Wang

Liu

et al. 2022

Preprint

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“…The NV center's electron spin has proven to be an exquisite probe for measuring several physical quantities, both external and internal to the host diamond, like electric and magnetic fields [8], [350], temperature [351], [352], pressure [353], strain [354], rotation [355], and charge [356] with high sensitivity (see Fig. 6).…”

Section: A Nv Center-based Sensingmentioning

confidence: 99%

Diamond Integrated Quantum Photonics: A Review

Shandilya,

Flågan,

Carvalho

et al. 2022

Preprint

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Integrated quantum photonics devices in diamond have tremendous potential for many quantum applications, including long-distance quantum communication, quantum information processing, and quantum sensing. These devices benefit from diamond's combination of exceptional thermal, optical, and mechanical properties. Its wide electronic bandgap makes diamond an ideal host for a variety of optical active spin qubits that are key building blocks for quantum technologies. In landmark experiments, diamond spin qubits have enabled demonstrations of remote entanglement, memory-enhanced quantum communication, and multi-qubit spin registers with fault-tolerant quantum error correction, leading to the realization of multinode quantum networks. These advancements put diamond at the forefront of solid-state material platforms for quantum information processing. Recent developments in diamond nanofabrication techniques provide a promising route to further scaling of these landmark experiments towards real-life quantum technologies. In this paper, we focus on the recent progress in creating integrated diamond quantum photonic devices, with particular emphasis on spin-photon interfaces, cavity optomechanical devices, and spin-phonon transduction. Finally, we discuss prospects and remaining challenges for the use of diamond in scalable quantum technologies.

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“…The extremely long spin coherence times of up to 1.8 ms, 1.5 ms and 1.2 ms at room temperature are reported for the ground state (GS) of the NV − center in diamond [23], silicon vacancy [18] and divacancy [24] in SiC, respectively, which makes them potential materials for room-temperature quantum information processing devices. Besides, their spin states and coherence times are sensitivity to external fields, such as magnetic field [25,26], strain [27,28], temperature [29,30] and electric field [31,32], and the spin states can be prepared, manipulated, and optically read out through a combination of microwave and optical means, making them become promising ultrasensitive nanoscale sensors [22]. However, the intrinsic limitation due to the nature of three-dimensional (3D) materials makes it challenging to prepare the spin centers close to the sample surface, which affects the sensitivity of the sensor.…”

Section: Brief Introduction Of Backgroundmentioning

confidence: 99%

Spin-active defects in hexagonal boron nitride

Liu¹,

Guo²,

Yu³

et al. 2022

Mater. Quantum. Technol.

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Quantum technology grown out of quantum information theory, including quantum communication, quantum computation and quantum sensing, not only provides powerful research tools for numerous fields, but also is expected to go to civilian use in the future. Solid-state spin-active defects are one of promising platforms for quantum technology, and the host materials include three-dimensional diamond and silicon carbide, and the emerging two-dimensional hexagonal boron nitride (hBN) and transition-metal dichalcogenides. In this review, we will focus on the spin defects in hBN, and summarize theoretical and experimental progresses made in understanding properties of these spin defects. In particular, the combination of theoretical prediction and experimental verification is highlighted. We also discuss the future advantages and challenges of solid-state spins in hBN on the path towards quantum information applications.

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Recent developments of quantum sensing under pressurized environment using the nitrogen vacancy (NV) center in diamond

Cited by 18 publications

References 83 publications

Magnetic detection under high pressures using designed silicon vacancy centers in silicon carbide

Magnetic detection under high pressures using designed silicon vacancy centers in silicon carbide

Diamond Integrated Quantum Photonics: A Review

Spin-active defects in hexagonal boron nitride

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