1999
DOI: 10.1016/s0040-6090(98)01793-3
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Recent developments of silicon thin film solar cells on glass substrates

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Cited by 72 publications
(28 citation statements)
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“…The i-layers consist of non-doped intrinsic amorphous and microcrystalline Si. These have different band-gaps and hence provide for a wider spectral response [1]. The doped layers are all made from μc-SiOx material, except for the top cell p-layer, which is a-SiC (due to the SnO 2 :F).…”
Section: Solar Cell Productionmentioning
confidence: 99%
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“…The i-layers consist of non-doped intrinsic amorphous and microcrystalline Si. These have different band-gaps and hence provide for a wider spectral response [1]. The doped layers are all made from μc-SiOx material, except for the top cell p-layer, which is a-SiC (due to the SnO 2 :F).…”
Section: Solar Cell Productionmentioning
confidence: 99%
“…Transparent conducting oxides (TCOs) are widely used throughout industry and in particular in the production of solar cells where front electrical contacts are needed which are highly optically transparent and with a relatively low electrical resistance [1]. The properties of this TCO front contact have been shown to be critical to the performance of the thin film solar cells.…”
Section: Introductionmentioning
confidence: 99%
“…In contrast, it is thought that the growth of the randomly oriented c-Si:H is not affected by the growth surface structure under the deposition condition used because the perpendicular grain size of the c-Si:H measured by XRD (D 220 ) is much smaller than the film thickness and also smaller than those measured in the ͑220͒ or ͑400͒ preferentially oriented poly-Si. 3,37 This may result in a saturation of lateral and perpendicular grain size as well as Hall mobility observed in the c-Si:H films. As Kamiya et al report, the growth of the ͑400͒ oriented poly-Si depends significantly on the growth surface structure.…”
Section: Growth Mechanism Of C-si:h and Relationship Between Film mentioning
confidence: 99%
“…[1][2][3][4][5][6] Plasma-enhanced chemical vapor deposition ͑PECVD͒ is not only a common and simple technique employed in the fabrication of these silicon-based devices, it also provides the ability to control the film microstructure such as the grain size and the grain boundary structure. This feature makes it suitable for the development of materials for novel quantum effect devices such as single-electron transistors ͑SETs͒.…”
Section: Introductionmentioning
confidence: 99%
“…Transparent Conducting Oxides (TCO's) are widely used throughout industry and in particular in the production of solar cells where highly optically transparent and relatively low electrical resistance front contacts are needed [1]. The TCO properties are of high importance in the efficiency of the resulting PV cells.…”
Section: Introductionmentioning
confidence: 99%