2019
DOI: 10.1016/j.opelre.2019.04.004
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Recent infrared detector technologies, applications, trends and development of HgCdTe based cooled infrared focal plane arrays and their characterization

Abstract: Infrared thermal imaging, using cooled and uncooled detectors, is continuously gaining attention because of its wide military and civilian applications. Futuristic requirements of high temperature operation, multispectral imaging, lower cost, higher resolution (using pixels) etc. are driving continuous developments in the field. Although there are good reviews in the literature by Rogalski [1-4], Martyniuk et al. [5] and Rogalski et al. [6] on various types of infrared detectors and technologies, this paper … Show more

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Cited by 101 publications
(40 citation statements)
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“…In the past decades, a significant amount of the commercial IR photodetectors have been fabricated based on conventional narrow‐gap semiconductors, such as germanium, mercury cadmium telluride, and indium gallium arsenide. [ 4–6 ] However, these materials suffer from strict manufacturing environment and complex synthesis methods, leading to complex production process and high cost. [ 7,8 ] On the one hand, these materials need to be fabricated in an expensive high vacuum environment.…”
Section: Figurementioning
confidence: 99%
“…In the past decades, a significant amount of the commercial IR photodetectors have been fabricated based on conventional narrow‐gap semiconductors, such as germanium, mercury cadmium telluride, and indium gallium arsenide. [ 4–6 ] However, these materials suffer from strict manufacturing environment and complex synthesis methods, leading to complex production process and high cost. [ 7,8 ] On the one hand, these materials need to be fabricated in an expensive high vacuum environment.…”
Section: Figurementioning
confidence: 99%
“…波长变 长, 碲镉汞材料的带隙变窄. 暗电流和少子寿命成为重 要的限制因素, 其中暗电流随着截止波长的增加呈指 数式增长 [6][7][8] . 半导体材料电学性能的调控依赖掺杂技 术, 在短波和中波波段, 碲镉汞材料常采用本征掺杂, 也就是Hg空位掺杂获得p型材料 [9] .…”
Section: 引言unclassified
“…The photocurrent needs to be amplified and finally turned into digital signal by the read-out integrated circuit (ROIC). Benefiting from the CMOS technology, the ROIC has the advantages of high signal handling capacity, high circuit density, low power dissipation, high uniformity and low noise [ 3 ]. As shown in Figure 7 , the ROIC usually contains several blocks: (1) The read-out circuit (ROC) to amplify the photocurrent and turn it into a voltage signal; (2) the row decoder and the column multiplexer to select an individual pixel; (3) the power supply and clock signal generator to provide the bias and the clock signal; (4) some IRFPAs have the on-chip analog-to-digital converter (ADC) integrated in the ROIC, while others implement the external ADC.…”
Section: Read-out Integrated Circuit (Roic)mentioning
confidence: 99%
“…The photon IR detector absorbs the radiation by the interaction with electrons in the semiconductor material, and then the variation in the electronic energy distribution results in observable electrical output signal. This kind of detectors shows perfect signal-to-noise performance and very fast response, while its utilization is limited because of the requirement of cryogenic cooling [ 2 , 3 , 4 , 5 ]. Compared to its competitor, the thermal IR detector, which absorbs the incident IR power to cause temperature rise and measures the consequent change in some physical properties, presents smaller volume, lower cost, and non-necessity of cryogenic cooling, therefore it has wide application in automobile, security, and electric appliance [ 6 , 7 , 8 ].…”
Section: Introductionmentioning
confidence: 99%