We report 59 Co NMR and transport measurements on n-type filled skutterudites BaxYbyCo4Sb12 and AxCo4Sb12 (A= Ba, Sr), promising thermoelectric materials. The results demonstrate consistently that a shallow defect level near the conduction band minimum dominates the electronic behavior, in contrast to the behavior of unfilled CoSb3. To analyze the results, we modeled the defect as having a single peak in the density of states, occupied at low temperatures due to donated charges from filler atoms. We fitted the NMR shifts and spin-lattice relaxation rates allowing for arbitrary carrier densities and degeneracies. The results provide a consistent picture for the Hall data, explaining the temperature dependence of the carrier concentration. Furthermore, without adjusting model parameters, we calculated Seebeck coefficient curves, which also provide good consistency. In agreement with recently reported computational results, it appears that composite native defects induced by the presence of filler atoms can explain this behavior. These results provide a better understanding of the balance of charge carriers, of crucial importance for designing improved thermoelectric materials.
SbCo guest atom or unfilled site FIG. 1. Crystal structure of filled skutterudites, M zT4X12 , where M is a guest atom (0 z 1).information about the electronic behavior and the importance of defects, very close in energy to the conduction band edge in these n-type filled skutterudites.
II. SAMPLE PREPARATION AND EXPERIMENTAL METHODSSkutterudites (space group Im3, shown in Fig. 1, visualized with VESTA [19]) of nominal composition Ba 0.1 Yb 0.2 Co 4 Sb 12 , Ba 0.2 Co 4 Sb 12 , and Sr 0.2 Co 4 Sb 12were prepared by a melting-annealing-spark plasma sintering method. The high-purity elements were weighed and mixed in the stoichiometric ratio, loaded into graphite-coated quartz tubes, and sealed in vacuum. These were placed in a furnace and heated to 1373 K at