2020
DOI: 10.1080/10408436.2019.1708700
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Recent progress in bismuth ferrite-based thin films as a promising photovoltaic material

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Cited by 46 publications
(32 citation statements)
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“…Since the discovery of bulk photovoltaic effect (BPV), [1] BPV has attracted a lot of attention because of the peculiar photogenerated carrier separation mechanism. [2,3] Under illumination, photogenerated carriers are spontaneously produced and separated in ferroelectric domain wall (DW) due to the inversion symmetry breaking. [4,5] Different from the traditional p-n junction-based photovoltaic effect, the photovoltage of BPV is much larger than the bandgap, [6,7] as well as the power conversion efficiency can exceed the Shockley-Queisser limit.…”
Section: Introductionmentioning
confidence: 99%
“…Since the discovery of bulk photovoltaic effect (BPV), [1] BPV has attracted a lot of attention because of the peculiar photogenerated carrier separation mechanism. [2,3] Under illumination, photogenerated carriers are spontaneously produced and separated in ferroelectric domain wall (DW) due to the inversion symmetry breaking. [4,5] Different from the traditional p-n junction-based photovoltaic effect, the photovoltage of BPV is much larger than the bandgap, [6,7] as well as the power conversion efficiency can exceed the Shockley-Queisser limit.…”
Section: Introductionmentioning
confidence: 99%
“…Another very broad and important area is photo-induced applications, where lead-free BFO is a more promising material in comparison to other ferroelectric oxides because of its relatively small band-gap, which allow it to utilize quite a large part of the sunlight spectrum [5]. Thus, it is widely used in photovoltaics [6]. Moreover, BFO was shown to be an efficient visible light photocatalyst for the degradation of organic pollutants, such as antibiotics and dyes [7][8][9].…”
Section: Introductionmentioning
confidence: 99%
“…Although the origin of the photovoltaic effect in bismuth ferrite remains controversial, several key factors, such as domain wall, depolarization field, Schottky barrier, and oxygen defect, do have a significant impact on its photovoltaic characteristics. 4,6,7,10,15 The domain wall effect was confirmed to be the dominant factor only for the anomalous photovoltaic effect observed in the epitaxial BiFeO 3 films with periodic ferroelectric stripe domain patterns. 4,7 The depolarization field induced by the unscreened polarization charges to efficiently drive the separation of photogenerated carriers was suggested to work well in the polarized or self-polarized ferroelectrics, but it will be too low to account for the photovoltaic effect in the leaky BiFeO 3 films or bulk.…”
Section: Resultsmentioning
confidence: 93%