Recent Progress in Contact Engineering of Field-Effect Transistor Based on Two-Dimensional Materials

Miao, Jialei; Zhang, Xiaowei; Tian, Ye; Zhao, Yuda

doi:10.3390/nano12213845

Cited by 8 publications

(2 citation statements)

References 91 publications

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“…This fact may indicate the presence of the Fermi level pinning effect at the contact of the metal and the two-dimensional organic region. A similar phenomenon was previously observed, not only on conventional metal/polymer interfaces [ 6 ] but also on interfaces such as 3D metal/2D material [ 59 ]. In [ 60 ], it was experimentally shown that the pinning of the Fermi level at the metal–2D semiconductor interface can be caused by defects formed during the manufacture of electrodes.…”

Section: Resultssupporting

confidence: 83%

Non-Conjugated Poly(Diphenylene Phthalide)—New Electroactive Material

Karamov,

Galiev,

Lachinov

et al. 2023

Polymers

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In organic electronics, conjugated conductive polymers are most widely used. The scope of their application is currently very wide. Non-conjugated polymers are used much less in electronics and are usually used as insulation materials or materials for capacitors. However, the potential of non-conjugated polymers is much wider, due to the fact that new electronic materials with unique electronic properties can be created on the basis of non-conjugated polymers, as well as other inorganic dielectrics. This article demonstrates the possibilities of creating electrically conductive materials with unique electronic parameters based on non-conjugated polymers. The results of the study of the sensory properties of humidity are given as examples of the practical application of the structure. The abnormal electronic properties are realized along the interface of two polymer dielectrics with functional polar groups. The submicron films of polydiphenylenephthalide were used as a dielectric. It is shown that a quasi-two-dimensional electronic structure with abnormally large values of conductivity and mobility of charge carriers occurs along the interface. These structures are often called quasi-two-dimensional electron gas (Q2DEG). This article describes the manufacturing processes of multielectrode devices. Polymer films are deposited via the spin-coating method with polymer solutions in cyclohexanone. The metal electrodes were manufactured through thermal deposition in a vacuum. Three types of metal electrodes made of aluminum, copper and chromium were used. The influence of the electron work function of contacting metals on the electronic parameters of the structure was studied. It was established that the work function decrease leads to an increase in the conductivity and mobility of charge carriers. The charge carrier parameters were estimated based on the analysis of the current-voltage characteristics within the space-charge-limited current technique. The Richardson-Schottky thermionic emission model was used to evaluate values a potential barrier at metal/organic interfaces. It was established that the change in ambient humidity strongly affects the electronic transport properties along the polymer/polymer interface. It is demonstrated that the increase in conductivity with an increase in humidity occurs due to an increase in the mobility of charge carriers and a decrease in the height of the potential barrier at the three-dimensional metal contact with two-dimensional polymer interface. The potential barrier between the electrode and the bulk of the polymer film is significantly higher than between the electrode and the quasi-two-dimensional polymer structure.

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Section: Resultssupporting

confidence: 83%

Non-Conjugated Poly(Diphenylene Phthalide)—New Electroactive Material

Karamov,

Galiev,

Lachinov

et al. 2023

Polymers

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“…Until now, most research efforts on Fermi-level pinning have focused on optimizing electrode contacts in solar cells [27][28][29] and gate characteristics in field-effect transis-tors [30][31][32][33][34]. Research on Fermi-level pinning in the hot carrier detection devices has mainly focused on enhancing the photoelectric response in the visible to near-infrared wavelength range [14][15][16].…”

Section: Introductionmentioning

confidence: 99%

Overcoming the Fermi-Level Pinning Effect in the Nanoscale Metal and Silicon Interface

Lin

2023

Nanomaterials

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Silicon-based photodetectors are attractive as low-cost and environmentally friendly optical sensors. Also, their compatibility with complementary metal-oxide-semiconductor (CMOS) technology is advantageous for the development of silicon photonics systems. However, extending optical responsivity of silicon-based photodetectors to the mid-infrared (mid-IR) wavelength range remains challenging. In developing mid-IR infrared Schottky detectors, nanoscale metals are critical. Nonetheless, one key factor is the Fermi-level pinning effect at the metal/silicon interface and the presence of metal-induced gap states (MIGS). Here, we demonstrate the utilization of the passivated surface layer on semiconductor materials as an insulating material in metal-insulator-semiconductor (MIS) contacts to mitigate the Fermi-level pinning effect. The removal of Fermi-level pinning effectively reduces the Schottky barrier height by 12.5% to 16%. The demonstrated devices exhibit a high responsivity of up to 234 μA/W at a wavelength of 2 μm, 48.2 μA/W at 3 μm, and 1.75 μA/W at 6 μm. The corresponding detectivities at 2 and 3 μm are 1.17 × 108 cm Hz1/2 W−1 and 2.41 × 107 cm Hz1/2 W−1, respectively. The expanded sensing wavelength range contributes to the application development of future silicon photonics integration platforms.

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