Recent Progress in Development Orientation-Patterned GaP for Next-Generation Frequency Conversion Devices

Tassev, V.; Snure, Michael; Peterson, Rita D.; Schepler, Kenneth L.; Bedford, Robert; Mann, Matthew; Vangala, Shiva; Goodhue, W. D.; Lin, A.; Harris, James S.; Fejer, M. M.; Schunemann, P. G.

doi:10.1364/cleo_at.2013.jm4k.5

Cited by 5 publications

(5 citation statements)

References 7 publications

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“…Obviously, at certain conditions the HVPE growth is more favorable to one of the domain orientations—the one in which domains propagate along [01ī] direction and are associated with the growth on the substrate surface, than the one in which domains propagate along the opposite [011] direction and are associated with the growth on the inverted layer. This is in a good agreement with our previous studies [ 20,33,34 ] as well with some others. [ 26 ]…”

Section: Resultssupporting

confidence: 94%

“…Optimization of the reactor configuration and process parameters resulted in a significant increase of the growth rate [ 22–24 ] and improvement of the surface morphology and crystalline layer quality compared to our previously reported efforts. [ 20,33,34 ] Faster growth rates of up to 210 μm h −1 for growths with 1 h duration (Table 2: run 1), smoother surface morphology (RMS = 1–2 nm), and crystalline quality similar to the commercial substrate quality were achieved with GaP/GaAs, GaAs/GaP, GaAs x P 1‐ x /GaAs, and GaAs x P 1‐ x /GaP heteroepitaxy. Although the growth of GaAs/GaP (Table 2: run 5 and Figure a) can be considered less favorable due to the positive lattice mismatch, [ 35,36 ] even this heteroepitaxial case resulted in a faster growth rate (170 μm h −1 ) than the growth rate of 150 μm/h for GaAs/GaAs homoepitaxy (Table 2: run 2 and Figure 1b), which was performed at the same growth conditions.…”

Section: Resultsmentioning

confidence: 99%

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Thick Heteroepitaxy of Binary and Ternary Semiconductor Materials for Nonlinear Frequency Conversion in the Mid and Longwave Infrared Region

Tassev

Vangala

Brinegar

et al. 2020

Physica Status Solidi (a)

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Thick hydride vapor phase heteroepitaxy of some III–V, II–VI, and III–VI binary and ternary semiconductor materials such as GaAs, GaP, GaP, GaAsxP1‐x, ZnSe, and GaSe is performed on GaAs substrates and orientation‐patterned GaAs templates. Up to 500 μm thick GaAs, GaP, GaP, GaAsxP1‐x, and ZnSe layers are deposited in single growths or after a regrowth. The GaSe layers deposited through van der Waals heteroepitaxy are up to 4–5 μm thick. When possible, growths are also performed homoepitaxially as the comparison of growth rate and layer quality indicates similar or better results in some of the heteroepitaxial cases. Material analysis using optical microscopy, scanning electron microscopy, atomic force microscopy, high‐resolution X‐ray diffraction, and energy dispersive X‐ray spectroscopy indicate smooth surface morphology, uniform layer thicknesses, high crystalline quality, and gradual substrate‐to‐layer material transition in the cases of heteroepitaxy. Respectively, the growths on the templates prepared by an optimized polarity inversion technique (assisted by molecular‐beam epitaxy) reveal excellent domain fidelity and good infrared transparency. The samples grown on templates are intended for frequency conversion devices operating in mid and longwave infrared. The layers grown on plain substrates are meant to support applications in optoelectronics, renewable energy, sensing, and solar cells.

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Section: Resultssupporting

confidence: 94%

Section: Resultsmentioning

confidence: 99%

Thick Heteroepitaxy of Binary and Ternary Semiconductor Materials for Nonlinear Frequency Conversion in the Mid and Longwave Infrared Region

Tassev

Vangala

Brinegar

et al. 2020

Physica Status Solidi (a)

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“…The two-photon absorption edge is shifted to 1 µm and the crystals are transparent to 12.5 µm, with d 36 = 75 pmV −1 [67]. The patterning process is similar to that of OP-GaAs, with >1 mm layer thicknesses achieved repeatably [68]. Parametric downconversion has been demonstrated using a variety of pump lasers, including Yb:fiber [69][70][71], Er:fiber [72], Q-switched Nd:YVO 4 [73] and Nd:YAG lasers [74], and through difference frequency generation [75,76].…”

Section: Quasi-phase-matched Semiconductorsmentioning

confidence: 80%

Creating mid-infrared single photons

McCracken,

Graffitti,

Fedrizzi

2018

Preprint

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Single-photon creation through parametric downconversion underpins quantum technology for quantum sensing and imaging. Here we numerically study the creation of single photons in the near-and mid-infrared regime from 1.5-12 µm in a range of novel nonlinear semiconductor and chalcopyrite materials. We identify phase-matching conditions and single out regimes in which group-velocity matching can be achieved with commercially available pump lasers. Finally, we discuss how mid-infrared single photons can be detected. Using our numerical results, we identify materials and pump lasers for up-conversion detection in conventional wavelength bands. Our study provides a complete recipe for mid-IR single-photon generation and detection, opening up quantum enhancements for mid-IR applications such as bio-medical imaging, communication, and remote sensing. INTRODUCTIONSingle-photon creation with quantum emitters or through parametric downconversion is a mature quantum technology with bright photon sources now routinely available at visible and telecommunications wavelengths. A major application area for single-photon sources is in quantum sensing and metrology, where they can exceed noise limitations intrinsic to classical systems for e.g. sub-shot-noise phase estimation [1] or absorption measurements in the few-photon regime [2].Expanding single-photon technology beyond the near-infrared (1 to 2 µm) into the midinfrared spectrum (2 to 20 µm) could enable quantum advantages for a host of mid-IR applications [3], e.g. medical imaging [4,5] at ultra-low light levels. It would further open up access to scatter-free atmospheric windows [6-8] for free-space quantum communication, and for quantum remote sensing, e.g. the detection of biological or chemical samples in the few-photon regime, stealth range finding, and in particular quantum LIDAR [9,10].The most popular method for generating single-photon pairs is parametric downconversion in crystals such as BBO, BiBO, PPLN and PPKTP. Due to their optical properties, they allow access from ultraviolet to near-infrared wavelengths. PPLN and PPKTP are suitable for generation of photons up to 5 µm, and single-photon generation and upconversion detection in PPLN has been demonstrated for up to 4 µm [11,12]. However, beyond that limit these two materials become opaque. A suite of novel nonlinear materials has recently been explored using widely tunable optical parametric oscillators (OPOs). Four of the most exciting materials are OPGaP, OPGaAs, CSP and ZGP, each of which exhibit transparencies that extend well beyond 5 µm.Here we numerically study mid-infrared photon generation in these materials, benchmarking against known results in PPLN and PPKTP. We show that wavelengths up to 13 µm can comfortably reached with available pump lasers. We identify parameter regimes for type-0, type-I and type-II phase-matching and highlight a number of special cases for which group-velocity matching between the pump and signal/idler photons can be achieved, allowing for the creation of spectrally pure s...

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“…[21], and details on the reactor used by Tassev et al can be found in ref. [22]. The growth parameters of GaP SAG conducted in [110] and [

\overset{false¯}{1}

10]‐oriented openings were optimized to achieve high vertical growth rate and equal lateral growth rate in the two kinds of openings that are desired by OP‐GaP growth.…”

Section: Methodsmentioning

confidence: 99%

Direct Heteroepitaxy of Orientation‐Patterned GaP on GaAs by Hydride Vapor Phase Epitaxy for Quasi‐Phase‐Matching Applications

Strömberg

Omanakuttan

et al. 2019

Physica Status Solidi (a)

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Heteroepitaxial growth of orientation-patterned (OP) GaP (OP-GaP) on wafer-bonded OP-GaAs templates is investigated by low-pressure hydride vapor phase epitaxy for exploiting the beneficial low two-photon absorption properties of GaP with the matured processing technologies and higher-quality substrates afforded by GaAs. -First, GaP homoepitaxial selective area growth (SAG) is conducted to investigate the dependence of GaP SAG on precursor flows and temperatures toward achieving a high vertical growth rate and equal lateral growth rate in the [110] and [110]-oriented openings. Deteriorated domain fidelity is observed in the heteroepitaxial growth of OP-GaP on OP-GaAs due to the enhanced growth rate on domain boundaries by threading dislocations generated by 3.6% lattice matching in GaP/GaAs. The dependence of dislocation dynamics on heteroepitaxial growth conditions of OP-GaP on OP-GaAs is studied. High OP-GaP domain fidelity associated with low threading dislocation density and a growth rate of 57 μm h À1 are obtained by increasing GaCl flow. The properties of heteroepitaxial GaP on semi-insulating GaAs is studied by terahertz time-domain spectroscopy in the terahertz range. The outcomes of this work will pave the way to exploit heteroepitaxial OP-GaP growth on OP-GaAs for frequency conversion by quasi-phase-matching in the mid-infrared and terahertz regions.

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Recent Progress in Development Orientation-Patterned GaP for Next-Generation Frequency Conversion Devices

Cited by 5 publications

References 7 publications

Thick Heteroepitaxy of Binary and Ternary Semiconductor Materials for Nonlinear Frequency Conversion in the Mid and Longwave Infrared Region

Thick Heteroepitaxy of Binary and Ternary Semiconductor Materials for Nonlinear Frequency Conversion in the Mid and Longwave Infrared Region

Creating mid-infrared single photons

Direct Heteroepitaxy of Orientation‐Patterned GaP on GaAs by Hydride Vapor Phase Epitaxy for Quasi‐Phase‐Matching Applications

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