Recent Progress in Dilute Nitride-antimonide Materials for Photonic and Electronic Applications

Abstract

International audienceThis paper reviews the recent progress in GaNAsSb material for photonic and electronic applications. All the results and data presented in this review article are summarized from our previously published works in refs. 6-12. Photoresponsivity of 12A/W and cut-off frequency of 4.5GHz were achieved in the 1.3µm GaNAsSb based photodetector. A GaNAsSb/GaAs optical waveguide system was also demonstrated at 1.55µm. The GaNAsSb based photoconductive switch exhibits pulsed response with FWHM of 30ps and photoresponse of up to 1.6µm. The turn-on voltage of the device fabricated from GaNAsSb based HBT is ~330mV lower than that of a conventional AlGaAs/GaAs HBT

Doping effects on the composition, electric and optical properties of MBE-grown 1.1 eV GaNAsSb layers

“…In particular, GaNAsSb is a type of dilute nitride which has demonstrated its suitability as a ∼ 1 eV bandgap material, provided the partial substitution of As anions by N and Sb [4,5]. This fact allows its incorporation in many types of electronic and optoelectronic devices such as near infrared (NIR) photodetectors [6][7][8][9], photoconductive switches [10,11], heterojunction bipolar transistors [12,13], lasers [14,15], etc. Other works have used GaNAsSb for building a subcell in III-V multijunction solar cells for both space and terrestrial applications [16][17][18], or even as a tandem solar cell on top of a silicon substrate [19].…”