Recent Progress in Inorganic Hole Transport Materials for Efficient and Stable Perovskite Solar Cells

Gil, Bumjin; Yun, Alan Jiwan; Lee, Younghyun; Kim, Jinhyun; Lee, Byung-Ho; Park, Byungwoo

doi:10.1007/s13391-019-00163-6

Cited by 77 publications

(49 citation statements)

References 195 publications

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“…While solution-processable poly(triarylamine) (PTAA), poly(3,4-ethylenedioxythiophene) polystyrenesulfonate (PEDOT:PSS), nickel oxide (NiO) nanoparticles, and copper thiocyanate (CuSCN) are the common HTL materials by solution processing [ 50 , 51 , 52 ], several groups have investigated replacing these HTL materials with ALD-grown inorganic materials, including NiO x , vanadium oxide (VO x ), and iridium-doped titanium dioxide (TiO 2 -IrO x ).…”

Section: Ald Below the Perovskite Layermentioning

confidence: 99%

Inorganic Materials by Atomic Layer Deposition for Perovskite Solar Cells

Park

2021

Nanomaterials

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Organic–inorganic hybrid perovskite solar cells (PSCs) have received much attention with their rapid progress during the past decade, coming close to the point of commercialization. Various approaches in the process of PSC development have been explored with the motivation to enhance the solar cell power conversion efficiency—while maintaining good device stability from light, temperature, and moisture—and simultaneously optimizing for scalability. Atomic layer deposition (ALD) is a powerful tool in depositing pinhole-free conformal thin-films with excellent reproducibility and accurate and simple control of thickness and material properties over a large area at low temperatures, making it a highly desirable tool to fabricate components of highly efficient, stable, and scalable PSCs. This review article summarizes ALD’s recent contributions to PSC development through charge transport layers, passivation layers, and buffer and recombination layers for tandem applications and encapsulation techniques. The future research directions of ALD in PSC progress and the remaining challenges will also be discussed.

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Section: Ald Below the Perovskite Layermentioning

confidence: 99%

Inorganic Materials by Atomic Layer Deposition for Perovskite Solar Cells

Park

2021

Nanomaterials

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“…Application of CuI as a transparent hole-transport layer began in the dye-sensitized solar cell field, [38][39][40] and later continued in the fields of organic photovoltaics [41][42][43][44][45][46][47][48] and hybrid perovskite PV. 49 For a full review of the CuI literature, see Ref. 22.…”

Section: Copper Iodidementioning

confidence: 99%

Bridging the p-type transparent conductive materials gap: synthesis approaches for disperse valence band materials

Fioretti

Morales‐Masis

2020

J. Photon. Energy

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Transparent conductive materials (TCMs) with high p-type conductivity and broadband transparency have remained elusive for years. Despite decades of research, no p-type material has yet been found to match the performance of n-type TCMs. If developed, the high-performance p-type TCMs would lead to significant advances in a wide range of technologies, including thin-film transistors, transparent electronics, flat screen displays, and photovoltaics. Recent insights from high-throughput computational screening have defined design principles for identifying candidate materials with low hole effective mass, also known as disperse valence band materials. Particularly, materials with mixed-anion chemistry and nonoxide materials have received attention as being promising next-generation p-type TCMs. However, experimental demonstrations of these compounds are scarce compared to the computational output. One reason for this gap is the experimental difficulty of safely and controllably sourcing elements, such as sulfur, phosphorous, and iodine for depositing these materials in thin-film form. Another important obstacle to experimental realization is air stability or stability with respect to formation of the competing oxide phases. We summarize experimental demonstrations of disperse valence band materials, including synthesis strategies and common experimental challenges. We end by outlining recommendations for synthesizing p-type TCMs still absent from the literature and highlight remaining experimental barriers to be overcome.

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“…Photovoltaic devices are recognized as prospective energy sources [1][2][3][4][5][6][7][8] . As light absorbers, halide perovskites have had a significant impact on solar cell research owing to their remarkable photovoltaic properties, such as their long charge diffusion length and low exciton binding energies [9][10][11][12][13][14][15][16] . In particular, the current-voltage (I-V) hysteresis of halide perovskites has broadened their applications to electronic devices beyond photovoltaics, such as field-effect transistors, resistive-switching memory, and artificial synapses [17][18][19] .…”

Section: Introductionmentioning

confidence: 99%

Quasi-2D halide perovskites for resistive switching devices with ON/OFF ratios above 109

et al. 2020

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Resistive random-access memory (ReRAM) devices based on halide perovskites have recently emerged as a new class of data storage devices, where the switching materials used in these devices have attracted extensive attention in recent years. Thus far, three-dimensional (3D) halide perovskites have been the most investigated materials for resistive switching memory devices. However, 3D-based memory devices display ON/OFF ratios comparable to those of oxide or chalcogenide ReRAM devices. In addition, perovskite materials are susceptible to exposure to air. Herein, we compare the resistive switching characteristics of ReRAM devices based on a quasi-two-dimensional (2D) halide perovskite, (PEA) 2 Cs 3 Pb 4 I 13 , to those based on 3D CsPbI 3. Astonishingly, the ON/OFF ratio of the (PEA) 2 Cs 3 Pb 4 I 13-based memory devices (10 9) is three orders of magnitude higher than that of the CsPbI 3 device, which is attributed to a decrease in the high-resistance state (HRS) current of the former. This device also retained a high ON/OFF current ratio for 2 weeks under ambient conditions, whereas the CsPbI 3 device degraded rapidly and showed unreliable memory properties after 5 days. These results strongly suggest that quasi-2D halide perovskites have potential in resistive switching memory based on their desirable ON/OFF ratio and long-term stability.

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Recent Progress in Inorganic Hole Transport Materials for Efficient and Stable Perovskite Solar Cells

Cited by 77 publications

References 195 publications

Inorganic Materials by Atomic Layer Deposition for Perovskite Solar Cells

Inorganic Materials by Atomic Layer Deposition for Perovskite Solar Cells

Bridging the p-type transparent conductive materials gap: synthesis approaches for disperse valence band materials

Quasi-2D halide perovskites for resistive switching devices with ON/OFF ratios above 109

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