Recent Progress in MBE Growth of CdTe and HgCdTe on (211)B GaAs Substrates

Carmody, M.; Yulius, A.; Edwall, D. D.; Lee, D.; Piquette, E. C.; Jacobs, R. N.; Benson, D. K.; Stoltz, A. J.; Markunas, J. K.; Almeida, A.; Arias, J.

doi:10.1007/s11664-012-2129-z

Cited by 37 publications

(9 citation statements)

References 14 publications

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“…HgCdTe−on−GaAs technol− ogy combines the advantage of a low cost of large−diameter GaAs wafers with the reasonable misfit between the crystal lattice parameters and the thermal expansion coefficients of HgCdTe and the substrate. The general quality of HgCdTe/ GaAs has proven to be superior to that of HgCdTe/Si [1,2]. At the same time, there is still some lack of understanding of the influence of the specific defect structure of HgCdTe grown by a similar technology on GaAs and Si on the mate− rial electrical properties.…”

Section: Introductionmentioning

confidence: 99%

Defects in HgCdTe grown by molecular beam epitaxy on GaAs substrates

Іжнін¹,

Izhnin²,

Savytskyy³

et al. 2012

Opto-Electronics Review

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The Hall effect and photoluminescence measurements combined with annealing and/or ion milling were used to study the electrical and optical properties of HgCdTe films grown by molecular-beam epitaxy on GaAs substrates with ZnTe and CdTe buffer layers. Unintentional donor doping, likely from the substrate, which resulted in residual donor concentration of the order of 1015 cm−3, was observed in the films. Also, acceptor states, possibly related to structural defects, were observed.

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Section: Introductionmentioning

confidence: 99%

Defects in HgCdTe grown by molecular beam epitaxy on GaAs substrates

Іжнін¹,

Izhnin²,

Savytskyy³

et al. 2012

Opto-Electronics Review

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“…Recently, considerable attention has been devoted to the epitaxial growth of CdTe layers on alternative substrates such as Si, 1,2 Ge, 3,4 and GaAs, 5 to act as buffer layers for the subsequent growth of HgCdTe infrared materials and detector device structures. These studies on lattice mismatched hetero-epitaxial growth have been motivated by the potential for growing high quality HgCdTe infrared materials on large-area, cost-effective substrates for next generation HgCdTe infrared detectors and focal plane arrays (FPAs) with features of lower cost and larger array format size, 6,7 in comparison to current stateof-the-art HgCdTe infrared detectors grown on lattice matched CdZnTe substrates that are higher cost, lower crystal quality and smaller wafer size.…”

Section: Introductionmentioning

confidence: 99%

Strained CdZnTe/CdTe Superlattices As Threading Dislocation Filters in Lattice Mismatched MBE Growth of CdTe on GaSb

Pan

Zhang

et al. 2020

Journal of Elec Materi

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In this work, multiple sets of CdZnTe/CdTe strained-layer superlattices have been used as dislocation filtering layers for reducing the threading dislocations and improving the material quality of CdTe buffer layers grown by molecular beam epitaxy (MBE) on GaSb (211)B substrates. By incorporating a CdZnTe/CdTe superlattice filtering structure, a significant improvement in material quality has been achieved, with a low etch pit density of $ 1 9 10 5 cm À2 demonstrated for CdTe grown on GaSb, which is two orders of magnitude lower than previously reported values for CdTe grown directly on lattice mismatched substrates, and is comparable to values for state-of-the-art CdTe grown on lattice matched CdZnTe substrates. The filtering efficiency for each set of dislocation filtering layers has been determined to be approximately 70%. This approach provides a promising pathway towards achieving hetero-epitaxy of high quality HgCdTe on large-area lattice-mismatched alternative substrates with a low dislocation density for the fabrication of next generation infrared detectors with features of lower cost and larger array format size.

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“…There are many studies on GaAs(211)B substrates which especially show suppression of twin defect formations in MCT [10]. CdTe is commonly used as a buffer layer for MCT on GaAs to minimize the lattice mismatch between MCT and GaAs which is a detrimental effect that causes defect formation such as misfit dislocations, [11][12][13].…”

Section: Introductionmentioning

confidence: 99%

Study of the Effect of Various Chemical Polishing Treatments on MBE-Grown CdTe/GaAs (211)B Heterostructures

Bilgilisoy

Ozceri

Tarhan

2020

Sakarya University Journal of Science

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A three-inch-diameter high quality CdTe thin film was grown on a GaAs (211)B substrate by molecular beam epitaxy (MBE) in ultra-high vacuum conditions. The CdTe/GaAs (211)B heterostructure was then cut into several sample pieces. A few as-grown sample pieces were subjected to chemical etching solutions which created etch pits on the surface. The scanning electron microscopy images of such samples were used to calculate the etch pit densities on the surface. In addition, several as-grown samples were subjected to chemical polishing treatments under different conditions to quantify the removal of O and Te-O structures from the surface. Atomic force microscopy was used to determine as-grown and polished surface morphology and the polish rate of chemical solutions. A study of the surface stoichiometry and the chemical composition of the as-grown and polished CdTe (211)B surfaces were carried out by using Xray photoelectron spectroscopy. Bulk structural qualities of the as-grown and polished samples were studied in terms of the vibrational and phonon modes via confocal Raman spectroscopy. From a comparative analyses of the results, the best chemical polishing conditions for the MBEgrown CdTe (211)B heterostructure were determined.

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Recent Progress in MBE Growth of CdTe and HgCdTe on (211)B GaAs Substrates

Cited by 37 publications

References 14 publications

Defects in HgCdTe grown by molecular beam epitaxy on GaAs substrates

Defects in HgCdTe grown by molecular beam epitaxy on GaAs substrates

Strained CdZnTe/CdTe Superlattices As Threading Dislocation Filters in Lattice Mismatched MBE Growth of CdTe on GaSb

Study of the Effect of Various Chemical Polishing Treatments on MBE-Grown CdTe/GaAs (211)B Heterostructures

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