Recent progress in nanoparticle photoresists development for EUV lithography

Kasahara, Kazuki; Kosma, Vasiliki; Odent, Jérémy; Xu, Hong; Yu, Mufei; Giannelis, Emmanuel P.; Ober, Christopher K.

doi:10.1117/12.2218704

Cited by 17 publications

(12 citation statements)

References 3 publications

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“…Metalcontaining compounds also have an improved etch resistance compared to conventional chemically amplified resists (CARs). 6,7 Nanoparticles, introduced by Trikeriotis et al, 7 and organic-inorganic hybrid compounds have demonstrated photoresist performance. 8,9 Since the latter materials are molecular, they are well defined with a single particle size, as opposed to the nanoparticle systems.…”

Section: Introductionmentioning

confidence: 99%

Extreme ultraviolet patterning of tin-oxo cages

Haitjema

Vockenhuber

Kazazis

et al. 2017

J. Micro/Nanolith. MEMS MOEMS

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Abstract. We report on the extreme ultraviolet (EUV) patterning performance of tin-oxo cages. These cage molecules were already known to function as a negative tone photoresist for EUV radiation, but in this work, we significantly optimized their performance. Our results show that sensitivity and resolution are only meaningful photoresist parameters if the process conditions are optimized. We focus on contrast curves of the materials using large area EUV exposures and patterning of the cages using EUV interference lithography. It is shown that baking steps, such as postexposure baking, can significantly affect both the sensitivity and contrast in the open-frame experiments as well as the patterning experiments. A layer thickness increase reduced the necessary dose to induce a solubility change but decreased the patterning quality. The patterning experiments were affected by minor changes in processing conditions such as an increased rinsing time. In addition, we show that the anions of the cage can influence the sensitivity and quality of the patterning, probably through their effect on physical properties of the materials.

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Section: Introductionmentioning

confidence: 99%

Extreme ultraviolet patterning of tin-oxo cages

Haitjema

Vockenhuber

Kazazis

et al. 2017

J. Micro/Nanolith. MEMS MOEMS

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“…Secondly, it eliminates the need for chemical amplification, removing statistical uncertainties in the position of photoacid generators and quenchers. And thirdly, metal-containing compounds have an improved etch resistance compared to conventional chemically amplified resists [5].…”

Section: Introductionmentioning

confidence: 99%

Extreme ultraviolet patterning of tin-oxo cages

et al. 2017

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We report on the extreme ultraviolet (EUV) patterning performance of tin-oxo cages: molecular building blocks that are known to turn insoluble upon EUV exposure, thus having the properties of a negative tone photoresist. In this work, we focus on contrast curves of the materials using open-frame EUV exposures and their patterning capabilities using EUV interference lithography. It is shown that baking steps, such as post-exposure baking (PEB) can significantly affect both the sensitivity and contrast in the open-frame experiments as well as the patterning experiments. In addition, we show that the exchange of the anions of the cage can make a difference in terms of their physical properties. Our results demonstrate the significance of process optimization while evaluating the resist performance of novel molecular materials.

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“…Some researchers have reported the development of the metal containing photoresist that has high sensitivity performance, which will be very helpful for the low-energy power source to realize EUVL [21,22]. Some other new techniques including nanoparticle photoresists with high sensitivity have been reported [23][24][25][26]. Lately at the 2016 SPIE Advanced Lithography conference, a good amount of papers was presented demonstrating the substantial research on Photosensitized CARs [27][28][29][30][31].…”

Section: Status and Challengesmentioning

confidence: 99%

Promising Lithography Techniques for Next-Generation Logic Devices

2018

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Continuous rapid shrinking of feature size made the authorities to seek alternative patterning methods as the conventional photolithography comes with its intrinsic resolution limit. In this regard, some promising techniques have been proposed as next-generation lithography (NGL) that has the potentials to achieve both high-volume production and very high resolution. This article reviews the promising NGL techniques and introduces the challenges and a perspective on future directions of the NGL techniques. Extreme ultraviolet lithography (EUVL) is considered as the main candidate for sub-10-nm manufacturing, and it could potentially meet the current requirements of the industry. Remarkable progress in EUVL has been made and the tools will be available for commercial operation soon. Maskless lithography techniques are used for patterning in R&D, mask/mold fabrication and low-volume chip design. Directed self-assembly has already been realized in laboratory and further effort will be needed to make it as NGL solution. Nanoimprint lithography has emerged attractively due to its simple process steps, high throughput, high resolution and low cost and become one of the commercial platforms for nanofabrication. However, a number of challenging issues are waiting ahead, and further technological progresses are required to make the techniques significant and reliable to meet the current demand. Finally, a comparative study is presented among these techniques.

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Recent progress in nanoparticle photoresists development for EUV lithography

Cited by 17 publications

References 3 publications

Extreme ultraviolet patterning of tin-oxo cages

Extreme ultraviolet patterning of tin-oxo cages

Extreme ultraviolet patterning of tin-oxo cages

Promising Lithography Techniques for Next-Generation Logic Devices

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