Recent Progress in Ohmic Contacts to Silicon Carbide for High-Temperature Applications

Wang, Zhongtao; Liu, Wei; Wang, Chunqing

doi:10.1007/s11664-015-4107-8

Cited by 60 publications

(21 citation statements)

References 185 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Many researchers have been indicated that Ni 2 Si plays an important role in low specific contact resistance on the n-type 4H-SiC ohmic contact because of low Schottky barrier height. [32][33][34] Though the XRD patterns of these samples do not exhibit much difference during the aging process, the Ni (50 nm)/Nb(50 nm)/4H-SiC contact without undergoing the CF 4 :O 2 surface etching shows a degradation just after 50 h aging. Whereas, the Ni(75 nm)/Nb(25 nm)/4H-SiC contact applying the surface treatment exhibits excellent stability after 100 h aging at 500 °C.…”

Section: Resultsmentioning

confidence: 95%

500 °C high-temperature reliability of Ni/Nb ohmic contact on n-type 4H-SiC

Cuong¹,

Satô²,

Miyazaki³

et al. 2022

Jpn. J. Appl. Phys.

View full text Add to dashboard Cite

The reliability of Ni/Nb ohmic contact on n-type 4H-SiC at 500℃ was investigated. The current-voltage characteristics showed that, while the Ni(50)/Nb(50)/4H-SiC sample without applying the CF4:O2 etching process degraded just after 25-hour and lost ohmic behavior after 50-hour aging, the Ni(75)/Nb(25)/4H-SiC contact undergone CF4:O2 surface treatment still showed excellent stability after aging for 100 hours at 500℃. Though X-ray diffraction results indicated that the chemical compounds remained stable during the aging process, transmission electron microscopy showed that there was a redistribution of the chemical compounds at the interface of the contact after 500℃ aging. The depth distribution of the elements and energy dispersive X-ray analyses revealed that the contribution of carbon agglomeration at the interface accounted for the degradation of the sample without applying the etching process. Whereas the well-controlled excess carbon atoms of the contact undergone CF4:O2 treatment ensured the stability of this contact when operating at high-temperature ambient.

show abstract

Section: Resultsmentioning

confidence: 95%

500 °C high-temperature reliability of Ni/Nb ohmic contact on n-type 4H-SiC

Cuong¹,

Satô²,

Miyazaki³

et al. 2022

Jpn. J. Appl. Phys.

View full text Add to dashboard Cite

show abstract

“…Herein, junction 1 can significantly separate the photon-generated carriers within Te-doped black Si. Since the surface of the Te-doped black Si is rough enough to make good ohmic contact with the Au electrode, the response current is effectively improved, reaching values much higher than that of dark current.…”

Section: Resultsmentioning

confidence: 99%

Direct Fabrication of Te-Doped Black Si with an Enhanced Photoelectric Performance by Femtosecond Laser Irradiation under Water

Wang,

Du,

JJ Nivas

et al. 2024

ACS Appl. Mater. Interfaces

View full text Add to dashboard Cite

Tellurium (Te)-doped black silicon (Si) with enhanced absorption and photoelectric performance over a broad wavelength range of 0.2−2.5 μm was obtained using femtosecond (fs) laser irradiation in liquid water. Prior to laser irradiation, the Si sample was covered with a Te thin film (thickness 200 nm) over an adhesion layer of Cr (thickness 5 nm). Surface analyses by scanning electron microscopy and three-dimensional confocal microscopy evidence the presence of hierarchical surface structures combining quasi-periodic stripes with a spatial period of about 5 μm and subwavelength laser-induced periodic surface structures directed in directions parallel and perpendicular to the direction of the laser polarization, respectively. Moreover, the incorporation of Te generates intermediate levels within the Si bandgap. The Te-doped black Si shows a significant enhancement of the absorption, which reaches values of about 48% in the UV and visible (0.2−1.1 μm) and 70% in the near-infrared (1.1−2.5 μm) spectral ranges, respectively, due to the synergistic effects of multiscale surface structures and Te incorporation. Moreover, the surface reflectance is reduced to almost zero across the entire spectrum. The Te-doped black Si sample is used to realize a photodetector which displays an impressive photoelectric capability, being characterized by a responsivity of 328 mA/W, and an external quantum efficiency of 49.27% at a voltage bias of −10 V for 1064 nm light illumination, with rising and falling times of 55 and 67 ms, respectively. These figures remarkably outperform the response of unprocessed Si under the same experimental conditions.

show abstract

“…The techniques allowing control of the time-dependent temperature profile are rapid thermal processing technologies [10,11]. In the case of SiC, rapid thermal processing was mostly applied to implant annealing [12][13][14], ohmic [15][16][17] and Schottky contact formation [16,18], carbonization of silicon substrates [19,20], SiC on Si epitaxial growth by rapid thermal chemical vapor deposition [21,22], as well as to liquid phase epitaxy of SiC on Si [23,24]. The investigations using the rapid thermal processing-based formation or growth of SiC were focused on pseudosubstrates for heteroepitaxial growth of SiC [21,25], III-nitrides [26], and ZnO [27], and the fabrication of heterobipolar device applications [28,29].…”

Section: Introductionmentioning

confidence: 99%

Imprinting the Polytype Structure of Silicon Carbide by Rapid Thermal Processing

Pezoldt

Cimalla

2020

Crystals

View full text Add to dashboard Cite

Silicon carbide is a material with a multistable crystallographic structure, i.e., a polytypic material. Different polytypes exhibit different band gaps and electronic properties with nearly identical basal plane lattice constants, making them interesting for heterostructures without concentration gradients. The controlled formation of this heterostructure is still a challenge. The ability to adjust a defined temperature–time profile using rapid thermal processing was used to imprint the polytype transitions by controlling the nucleation and structural evolution during the temperature ramp-up and the steady state. The influence of the linear heating-up rate velocity during ramp-up and steady-state temperature on the crystal structure of amorphized ion-implanted silicon carbide layers was studied and used to form heteropolytype structures. Integrating the structural selection properties of the non-isothermal annealing stage of the ion-implanted layers into an epitaxial growth process allows the imprinting of polytype patterns in epitaxial layers due to the structural replication of the polytype pattern during epitaxial growth. The developed methodology paves the way for structural selection and vertical and lateral polytype patterning. In rapid thermal chemical vapor deposition, the adjustment of the process parameters or the buffer layer allowed the nucleation and growth of wurtzite silicon carbide.

show abstract

Recent Progress in Ohmic Contacts to Silicon Carbide for High-Temperature Applications

Cited by 60 publications

References 185 publications

500 °C high-temperature reliability of Ni/Nb ohmic contact on n-type 4H-SiC

500 °C high-temperature reliability of Ni/Nb ohmic contact on n-type 4H-SiC

Direct Fabrication of Te-Doped Black Si with an Enhanced Photoelectric Performance by Femtosecond Laser Irradiation under Water

Imprinting the Polytype Structure of Silicon Carbide by Rapid Thermal Processing

Contact Info

Product

Resources

About