Recent progress in optoelectronic applications of hybrid 2D/3D silicon-based heterostructures

Abstract

Silicon-based semiconductor technology has made great breakthroughs in the past few decades, but it is reaching the physical limits of Moore's law. In recent years, the presence of two-dimensional (2D) materials was regarded as an opportunity to break the limitation of traditional siliconbased optoelectronic devices owing to their special structure and superior properties. In consideration of the widely studied hybrid integration of 2D material detectors and 3D siliconbased systems, in this paper, the basic properties of several 2D materials used in photodetectors are summarized. Subsequently, the progress in silicon photonic integrated photodetectors based on 2D materials is reviewed, followed by the summarization of the device structure and main performances. Then, the combination of some other traditional and 2D devices is discussed as a supplement. Finally, the prospective development of the hybrid 2D/3D silicon-based heterostructures is expected.

Infrared Photodetection from 2D/3D van der Waals Heterostructures

“…Bottom-down mainly includes chemical vapor deposition (CVD) [ 123 ], molecular beam epitaxy (MBE) [ 124 ], atomic layer deposition (ALD) [ 125 , 126 ], electron beam epitaxy (EBE), etc. [ 127 , 128 ], which are suitable for large-scale wafer-level growth. However, they are expensive, and the conditions are harsh, not suitable for all 2D materials.…”

On-chip two-dimensional material-based waveguide-integrated photodetectors

“…52,53 In addition, graphene also shows the advantages of tunable optical properties, excellent adsorption capacity and conductivity, corrosion resistance, good flexibility, high melting point, and mature technology, and it can be compatible with almost any optical platform. 33,46,54 Consequently, graphene has become a desirable candidate for on-chip PD applications, and some graphene PDs reported to date have comparable or better performance than commercial germanium and InGaAs PDs. 21,55 The discovery of graphene has stimulated interest in studying 2DMs, leading to the intensive study of TMDCs.…”

“…32 (4) The electronic and optical properties of 2DMs can be easily tuned through methods such as strain engineering, vertical electric field gating, and chemical doping, enabling their bandgap to be adjusted. 33,34 (5) The atomic thickness of 2DMs can realize ultra-small volume and high-density integration. 35 (6) 2DMs exhibit natural surface passivation and free dangling bonds.…”

Multilayer SnS2/few-layer MoS2 heterojunctions with in-situ floating photogate toward high-performance photodetectors and optical imaging application

“…Of note, the surface of 2DLMs is free of dangling bonds, thereby circumventing the lattice matching constrains and processing limitations of conventional covalently bonded semiconductors (e.g., Si & GaAs) in terms of constructing heterostructures. These fascinating physical characteristics have endowed 2DLMs with high adaptability to various applications [6][7][8][9][10][11][12][13][14].…”