Recent Progress in Organic Bottom Anti-reflective Coatings.

Shao, Xie; Meador, Jim D.; Deshpande, Shree; Puligadda, Rama; Mizusawa, Kiyoe; Arase, Shinya

doi:10.2494/photopolymer.14.481

Cited by 6 publications

(2 citation statements)

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“…Spin-on carbon hardmask (C-SOH) possesses many advantages over the CVD process, as carbon film is formed by a solution dispense process. [2]~ [6] In addition, the layer alignment issue is expected to be critical at sub-40 nm technology nodes and beyond. Carbon-rich organic polymers are transparent enough to be used for the hardmask layer and they can replace amorphous carbon layer.…”

Section: Introductionmentioning

confidence: 99%

Organic underlayer materials with exceptionally high thermal stability

Cheon¹,

Yoon²,

Kim³

et al. 2009

Advances in Resist Materials and Processing Technology XXVI

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Multilayer hardmask (MLHM) schemes have been implemented as an indispensable process for ArF lithography which continues to demand thinner photoresist films. There are many variations of MLHM and semiconductor manufacturers choose to adopt their own designs, depending on their specific needs and technical advances. The quad-layer stack consisting of photoresist, organic ARC, CVD Si hardmask, and spin-on carbon underlayer is one of them. Despite the need for wafer transporting between the spin track and CVD equipment, this scheme is attractive because it can avoid laborious elaboration of sophisticated etching chemistries for spin-on Si-ARC and carbon underlayer. One of the issues arising from the mixed film forming process is the thermal stability of carbon underlayer at high temperatures during the CVD process of the Si hardmask. Organic underlayer which shows high thermal stability is crucial for this mixed hardmask process. These types of thermally stable organic film can also be used for other applications such as the spacer patterning technique for pitch size shrinkage. In this paper, we discuss the development of organic resins with high thermal stability, their physical properties, and their lithographic behaviors in the MLHM schemes.

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Section: Introductionmentioning

confidence: 99%

Organic underlayer materials with exceptionally high thermal stability

Cheon¹,

Yoon²,

Kim³

et al. 2009

Advances in Resist Materials and Processing Technology XXVI

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“…In hardmask strategy, several kinds of multilayer process have been developed ( Figure 1). 1,2,3 The most widely used and matured strategy is using an amorphous carbon layer (ACL) and silicon nitride (SiON). These layers are processed by chemical vapor deposition (CVD).…”

Section: Introductionmentioning

confidence: 99%

Silicon-based anti-reflective spin-on hardmask materials with improved storage stability for 193-nm lithography

et al. 2007

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As the feature sizes of integrated circuits shrink, thinner photoresist coating should be used in order to avoid high aspect ratio which can cause pattern collapse. Especially for 193 nm lithography, photoresist coating is too thin to subsequent etching step. One of the solutions to this problem is using hardmasks which have good etch selectivity to adjacent layers. In this paper, silicon-based anti-reflective spin-on hardmasks (Si-SOH) are described. One of the major problems of silicon based polymers in the hardmask compositions is poor storage stability because silanol group is reactive enough to condense each other, which can instigate molecular weight increase to yield gel-type particles. The storage stability of our hardmask materials have been improved by thermodynamically controlled synthesis and reactive mask strategy. Especially the reactive masked silanol groups can take part in crosslinking reaction under the process conditions without additional deprotection step. Although this strategy could encounter intermixing problems with other layers, we can produce silicon-based hardmasks without any deleterious effects. These hardmasks show antireflective properties and great etch selectivity to both photoresists and organic hardmasks (C-SOH).

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