Recent Progress in Phase-Change<?Pub _newline ?>Memory Technology

Burr, Geoffrey W.; BrightSky, M.; Sebastian, Abu; Cheng, Huai-Yu; Wu, Jin-Shang; Kim, Sang-Bum; Sosa, Norma; Παπανδρεου, Νικολαοσ; Lung, Hsiang-Lan; Pozidis, Haralampos; Eleftheriou, Evangelos; Lam, C.

doi:10.1109/jetcas.2016.2547718

Cited by 328 publications

(203 citation statements)

References 87 publications

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“…The sensing margin of AST based cell is ~2 orders of magnitude (Reset resistance ~10 5 Ω, Set resistance ~10 3 Ω), equal to that of AST based cells (Reset resistance ~10 4 Ω, Set resistance ~10 2 Ω). High resistance of AST based cell in Set state is regarded as a benefit of lowering the driven current, improving the Joule heat efficiency 32 . Furthermore, the Set speed has been significantly improved after Al doping, for a Set operation has been achieved by 6 ns pulse in AST based cell, while it should be ~20 ns in ST based cell.…”

Section: Resultsmentioning

confidence: 99%

Atomic scale insight into the effects of Aluminum doped Sb2Te for phase change memory application

Wang

Zheng

et al. 2018

Sci Rep

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To date, the unpleasant trade-off between crystallization speed and thermal stability for most phase change materials is detrimental to achieve phase change memory (PCM) with both features of high-speed and good-retention. However, it is proved that Al doping in Sb2Te, served as storage media in PCM, favors both a high writing speed (6 ns) and a good retention (103 °C), as well as a low power consumption. Judging by experimental and theoretical investigations, doped Al atoms prefer to replace Sb in Sb2Te lattice, strongly bonded with 6 Te atoms, to form a homogeneous phase. While in amorphous Al doped Sb2Te (AST), Al atoms are in tetrahedral environment, firmly bonded with four Sb/Te atoms. The strong bonding in Al centered tetrahedron in amorphous AST can obstruct the collective motion of Sb atoms near the matrix boundary, leading to the improvement in thermal stability and the confinement in grain size.

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Section: Resultsmentioning

confidence: 99%

Atomic scale insight into the effects of Aluminum doped Sb2Te for phase change memory application

Wang

Zheng

et al. 2018

Sci Rep

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“…[81] Another issue with PCM is the conductance drift, or relaxation, which is frequently observed especially for the amorphous state (i.e., off-state). [136] The drift coefficient v and time constant t 0 are material system dependent. [136] The drift coefficient v and time constant t 0 are material system dependent.…”

Section: Artificial Synapsesmentioning

confidence: 99%

“…[135] This phenomenon leads to a slow but steady increase in the device resistance over time, which follows the equation R(t) = R 0 (t/t 0 ) v , where R 0 represents the initial programmed resistance and t is the time elapsed since programming. [136] In PCM fabrication, the drift coefficient can be largely reduced using a metallic surfactant liner as a resistance drift stabilizer. A typical v is ≈0.1, while t 0 shows a large variation.…”

Section: Artificial Synapsesmentioning

confidence: 99%

Bridging Biological and Artificial Neural Networks with Emerging Neuromorphic Devices: Fundamentals, Progress, and Challenges

et al. 2019

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As the research on artificial intelligence booms, there is broad interest in brain‐inspired computing using novel neuromorphic devices. The potential of various emerging materials and devices for neuromorphic computing has attracted extensive research efforts, leading to a large number of publications. Going forward, in order to better emulate the brain's functions, its relevant fundamentals, working mechanisms, and resultant behaviors need to be re‐visited, better understood, and connected to electronics. A systematic overview of biological and artificial neural systems is given, along with their related critical mechanisms. Recent progress in neuromorphic devices is reviewed and, more importantly, the existing challenges are highlighted to hopefully shed light on future research directions.

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“…It can be switched from an amorphous high resistive phase to a crystalline low resistive phase by applying a short voltage pulse [1], [2]. This technology is overcoming all of its potential roadblocks and now exhibits rapid switching, extended endurance, high temperature data retention, low power consumption, and good thermal stability under solder reflow conditions [3]- [5].…”

Section: Introductionmentioning

confidence: 99%

Comprehensive Phase-Change Memory Compact Model for Circuit Simulation

Pigot

Bocquet

Gilibert

et al. 2018

IEEE Trans. Electron Devices

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Abstract-In this paper, a new continuous multilevel compact model for phase-change memory (PCM) is proposed. It is based on modified rate equations with the introduction of a variable related to GST melting. The model is evaluated using a large set of dynamic measurements and shows a good accuracy with a single model card. All fitting parameters are discussed and their impacts are detailed. Full circuit simulation is performed. Good convergence and fast simulation time suggest that this new compact model can be exploited for PCM circuit design.

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Recent Progress in Phase-ChangeMemory Technology

Cited by 328 publications

References 87 publications

Atomic scale insight into the effects of Aluminum doped Sb2Te for phase change memory application

Atomic scale insight into the effects of Aluminum doped Sb2Te for phase change memory application

Bridging Biological and Artificial Neural Networks with Emerging Neuromorphic Devices: Fundamentals, Progress, and Challenges

Comprehensive Phase-Change Memory Compact Model for Circuit Simulation

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