Recent Progress in Selective Area Growth and Epitaxial Lateral Overgrowth of III-Nitrides: Effects of Reactor Pressure in MOVPE Growth

Hiramatsu, K.; Nishiyama, K.; Motogaito, Atsushi; Miyake, Hideo; Iyechika, Yasushi; Maeda, Takuya

doi:10.1002/(sici)1521-396x(199911)176:1<535::aid-pssa535>3.3.co;2-9

Cited by 55 publications

(82 citation statements)

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“…Due to the smaller adsorption energy (À5.82 eV) of the N adatom on the (1 Â 1) with Ga monolayer, the desorption temperature of N at the stable site exceeds 1500 K, although the Ga desorption temperature appears in the range between 700 and 1000 K (E ad ¼ À2.73 eV at the stable adsorption site). This reasonably agrees with the experimental results in the MOVPE [109][110][111][112]. This implies that the N adatom diffuses on the (1 Â 1) with a Ga monolayer surface without desorption.…”

Section: Growth On Gan Surfacessupporting

confidence: 90%

“…It is well known that reconstructed structures appear on the growth front (surfaces) of semiconductor materials [1]. Kaxiras et al [2] studied the lowest-energy geometry for GaAs (111) with different stoichiometries. To this end, so far a lot of theoretical work has been carried out to investigate the surface structures of semiconductors using ab initio calculation, which is a promising tool for clarifying the complicated growth processes because of its ability to calculate electronic structures and total energy [2][3][4].…”

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confidence: 99%

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Ab initio-Based Approach to Crystal Growth

Kangawa

2015

Handbook of Crystal Growth

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Section: Growth On Gan Surfacessupporting

confidence: 90%

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confidence: 99%

Ab initio-Based Approach to Crystal Growth

Kangawa

2015

Handbook of Crystal Growth

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“…The angle between bottom (0001) surface and edge line between two adjacent planes is 58.4°, indicating that these planes are {10-11} planes, which fits the results shown in Figure 2. Those stable planes limit the final morphology of the GaN crystals [28]. On nitrided SiO x /sapphire templates, GaN submicron rods and micron columns can also be realized using the same growth parameters as on Ga-polar template (Fig.…”

Section: Carrier Gas Polarity and Its Influence On Growth Of Gan 3d mentioning

confidence: 99%

“…10 (a)]. It has been observed that the growth rate of the r-planes of Ga-polar GaN decreases and the in <0001> and <1-100> directions increases with decreasing temperature [34,38]. During this nucleation step at a low growth temperature of 960°C, the growth rate of the r-planes of Ga-polar seeds is smaller than that of the other two facets.…”

Section: Growth Of Single Nitride Polar Gan Columnsmentioning

confidence: 99%

GaN BASED 3D CORE-SHELL LEDS

Wang

Fündling

et al. 2012

Int. J. Hi. Spe. Ele. Syst.

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As a promising novel route towards highly efficient optoelectronic devices, GaN based 3D core-shell light emitting diodes (LEDs) have attracted increased attention in recent years. In comparison to conventional 2D thin film LED, the 3D LED systems using a core-shell geometry with high aspect ratio are a breakthrough in technology with lots of advantages. In this paper, we review our developed growth strategies of these LED systems on Si and sapphire substrates. A catalyst free selective area growth of GaN 3D core-shell LED systems was realized using patterned substrates by metal organic vapor phase deposition in a convenient continuous-flux growth mode. We have recently suggested that the surface polarity plays a crucial role for the morphology of GaN 3D structure growth. In order to analyze the surface polarity of 3D submicron or micron structures, Kelvin probe force microscopy and selective etching techniques have been developed. During the growth of GaN submicron rods and micron columns on patterned SiOx/sapphire templates, mixed polarity effects could be detected. A new "truncated pyramid + column" growth method was developed to effectively avoid the formation of mixed polarity and realize single N-polar GaN 3D devices. Transmission electron microscopy and spatially and spectrally resolved cathodoluminescence measurements evidently prove the core-shell structure of 3D LED systems.

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“…The epitaxial lateral overgrowth (ELO) technique has been intensively used in order to reduce the dislocation density. [4][5][6] One of the best approaches to improving the quality of GaN film is to choose a substrate in which both the lattice constant and the thermal expansion coefficient match those of the GaN material. LiGaO 2 , 7) LiAlO 2 , 8) and ScMgAlO 3 9) substrates have been used with regard to lattice constant.…”

Section: Introductionmentioning

confidence: 99%

Epitaxial Growth of GaN Film on (La,Sr)(Al,Ta)O₃(111) Substrate by Metalorganic Chemical Vapor Deposition

Sumiya

Chikyow

Sasahara

et al. 2002

Jpn. J. Appl. Phys.

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GaN films were grown on (La 0:29 ,Sr 0:71 )(Al 0:65 ,Ta 0:35 )O 3 (LSAT) (111) substrates, the lattice constant of which matched the 3 Â 3 structure of GaN (0001) and the thermal expansion coefficient of which was close to that of GaN, by atmospheric metalorganic chemical vapor deposition. It was found that the surface of LSAT having a perovskite crystal structure was damaged in ambient of NH 3 and TMG gas. However, the epitaxial growth of GaN film on the LSAT substrate was achieved by using an AlN blocking layer to prevent the damage by these gases. The crystallographic orientation was evaluated from a phi-scan of 4-cycle X-ray diffraction to be GaN½1 1 100 k LSAT½1 1 10 rotating in plane by 30 against the expected orientation (GaN½2 1 1 1 10 k LSAT½1 1 10). The 30 rotation would be caused by the bond configuration of the surface of the LSAT substrate. The interface structure at the substrate and the threading dislocation in the films were also investigated using a cross-sectional transmission electron microscope.

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Recent Progress in Selective Area Growth and Epitaxial Lateral Overgrowth of III-Nitrides: Effects of Reactor Pressure in MOVPE Growth

Cited by 55 publications

References 0 publications

Ab initio-Based Approach to Crystal Growth

Ab initio-Based Approach to Crystal Growth

GaN BASED 3D CORE-SHELL LEDS

Epitaxial Growth of GaN Film on (La,Sr)(Al,Ta)O₃(111) Substrate by Metalorganic Chemical Vapor Deposition

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Recent Progress in Selective Area Growth and Epitaxial Lateral Overgrowth of III-Nitrides: Effects of Reactor Pressure in MOVPE Growth

Cited by 55 publications

References 0 publications

Ab initio-Based Approach to Crystal Growth

Ab initio-Based Approach to Crystal Growth

GaN BASED 3D CORE-SHELL LEDS

Epitaxial Growth of GaN Film on (La,Sr)(Al,Ta)O3(111) Substrate by Metalorganic Chemical Vapor Deposition

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Product

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Epitaxial Growth of GaN Film on (La,Sr)(Al,Ta)O₃(111) Substrate by Metalorganic Chemical Vapor Deposition