2019
DOI: 10.1587/transele.2018odi0007
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Recent Progress in the Development of Large-Capacity Integrated Silicon Photonics Transceivers

Abstract: We report our recent progress in silicon photonics integrated device technology targeting on-chip-level large-capacity optical interconnect applications. To realize high-capacity data transmission, we successfully developed on-package-type silicon photonics integrated transceivers and demonstrated simultaneous 400 Gbps operation. 56 Gbps pulse-amplitude-modulation (PAM) 4 and wavelength-divisionmultiplexing technologies were also introduced to enhance the transmission capacity.

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Cited by 3 publications
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“…Along with its further development, more and more waveguide elements need to be integrated on the silicon-on-insulator (SOI) platform 3 . Though various optical elements have been studied so far, such as transceivers, couplers/inverse taper, subwavelength gratings, multiplexers and so on [4][5][6][7][8][9] , the packing density of photonic integrated circuits (PICs) is still not as high as their electronic counterparts 10 . The reason is that the diffraction limit hinders the further shrinking of waveguide 11 .…”
mentioning
confidence: 99%
“…Along with its further development, more and more waveguide elements need to be integrated on the silicon-on-insulator (SOI) platform 3 . Though various optical elements have been studied so far, such as transceivers, couplers/inverse taper, subwavelength gratings, multiplexers and so on [4][5][6][7][8][9] , the packing density of photonic integrated circuits (PICs) is still not as high as their electronic counterparts 10 . The reason is that the diffraction limit hinders the further shrinking of waveguide 11 .…”
mentioning
confidence: 99%