Recent progress of Ga2O3 materials and devices based on the low-cost, vacuum-free Mist-CVD epitaxial growth method

Zhang, Zeyulin; Yan, Pengru; Song, Qingwen; Chen, Haifeng; Zhang, Wentao; Yuan, Hao; Du, Fengyu; Liu, Dinghe; Chen, Dazheng; Zhang, Yuming

doi:10.1016/j.fmre.2023.01.001

Cited by 7 publications

(1 citation statement)

References 89 publications

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“…Owing to its unique electric and optical characteristics, Ga 2 O 3 has been explored as a workhorse for applications such as solar-blind ultraviolet photodetectors, power electronic devices, etc. [5,6]. Given the ultrawide bandgap, Ga 2 O 3 is regarded as an ideal host material for incorporating lanthanide elements [7].…”

Section: Introductionmentioning

confidence: 99%

The Impact of the Amorphous-to-Crystalline Transition on the Upconversion Luminescence in Er3+-Doped Ga2O3 Thin Films

Liang,

Chen,

Dong

et al. 2024

Energies

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Gallium oxide (Ga2O3) is an emerging wide bandgap semiconductor promising a wide range of important applications. However, mass production of high-quality crystalline Ga2O3 still suffers from limitations associated with poor reproducibility and low efficiency. Low-temperature-grown amorphous Ga2O3 demonstrates comparable performance with its crystalline counterparts. Lanthanide Er3+-doped Ga2O3 (Ga2O3: Er) possesses great potential for developing light-emitting devices, photodetectors, solid-state lasers, and optical waveguides. The host circumstance can exert a crystal field around the lanthanide dopants and strongly influence their photoluminescence properties. Here, we present a systematical study of the impact of amorphous-to-crystalline transition on the upconversion photoluminescence in Ga2O3: Er thin films. Through controlling the growth temperature of Ga2O3: Er films, the upconversion luminescence of crystalline Ga2O3: Er thin film is strongly enhanced over 100 times that of the amorphous Ga2O3: Er thin film. Moreover, the variation of photoluminescence reflects the amorphous-to-crystalline transformation of the Ga2O3: Er thin films. These results will aid further designs of favorable optoelectronic devices integrated with lanthanide-doped Ga2O3 thin films.

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Section: Introductionmentioning

confidence: 99%

The Impact of the Amorphous-to-Crystalline Transition on the Upconversion Luminescence in Er3+-Doped Ga2O3 Thin Films

Liang,

Chen,

Dong

et al. 2024

Energies

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Defect Structure and Luminescence of κ‐Ga₂O₃ Micro‐Monocrystals

Vyvenko,

Shapenkov,

Ubyivovk

et al. 2024

Physica Status Solidi (b)

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Wide bandgap orthorhombic polymorph of gallium oxide (κ‐Ga2O3) possessing a high spontaneous polarization grown on wurtzite‐type semiconducting substrates is considered to create a high mobility electron channel suitable for applications. Such κ‐Ga2O3 layers are composed of hexagon microprisms whose properties affect the lateral electric conductance. In this work, the structure and recombination properties of extended defects in individual “suspended” thin microprisms are investigated with transmission and scanning electron microscopy techniques (STEM, HR‐TEM) including cathodoluminescence (CL‐SEM). It is established that the microprism is composed of six equisized orthorhombic domains bounded by twin domain boundaries (TDBs) along the directions <110>. Twin domain contains a parallel array of antiphase boundaries (APB) of a high density stretched in the [010] direction. APBs possess steps or interruption and can form double oppositely shifted spatially separated layers (APB dipoles). TDBs on majority of their length are incoherent and serve as the border for the APB terminations. Panchromatic CL maps reveal either enhanced or reduced intensity of APB without noticeable spectral changes. CL intensity enhancement is proposed to be due to enhanced electron–hole generation caused by excess scattering of primary electron beam by APBs in thin films while, in fact, APB exhibits enhanced nonradiative recombination activity.

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Enhanced band-tuning and quality of Ni-doped Ga₂O₃ films via low-power RF magnetron sputtering

Hsu,

Zhu,

Huang

et al. 2024

J. Mater. Chem. C

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Recent progress of Ga2O3 materials and devices based on the low-cost, vacuum-free Mist-CVD epitaxial growth method

Cited by 7 publications

References 89 publications

The Impact of the Amorphous-to-Crystalline Transition on the Upconversion Luminescence in Er3+-Doped Ga2O3 Thin Films

The Impact of the Amorphous-to-Crystalline Transition on the Upconversion Luminescence in Er3+-Doped Ga2O3 Thin Films

Defect Structure and Luminescence of κ‐Ga₂O₃ Micro‐Monocrystals

Enhanced band-tuning and quality of Ni-doped Ga₂O₃ films via low-power RF magnetron sputtering

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Recent progress of Ga2O3 materials and devices based on the low-cost, vacuum-free Mist-CVD epitaxial growth method

Cited by 7 publications

References 89 publications

The Impact of the Amorphous-to-Crystalline Transition on the Upconversion Luminescence in Er3+-Doped Ga2O3 Thin Films

The Impact of the Amorphous-to-Crystalline Transition on the Upconversion Luminescence in Er3+-Doped Ga2O3 Thin Films

Defect Structure and Luminescence of κ‐Ga2O3 Micro‐Monocrystals

Enhanced band-tuning and quality of Ni-doped Ga2O3 films via low-power RF magnetron sputtering

Contact Info

Product

Resources

About

Defect Structure and Luminescence of κ‐Ga₂O₃ Micro‐Monocrystals

Enhanced band-tuning and quality of Ni-doped Ga₂O₃ films via low-power RF magnetron sputtering