Recent Progress of Gr/Si Schottky Photodetectors

Shao, Qingguo; Qin, Hao; Li, Chao; Cai, Kunpeng; Dong, Jianxia; Liu, Xuhui; Cao, N.; Zang, Xiaobei

doi:10.1007/s13391-022-00384-2

Cited by 6 publications

(2 citation statements)

References 94 publications

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“…Generally, the spectral range of the photodetectors, such as GaN [ 3 ], Si [ 4 ], Ge [ 5 ], HgCdTe [ 6 ] and InGaAs [ 7 ], is determined by the bandgap of the semiconductors serving as the photosensitive material. Owing to the zero bandgap of graphene, graphene-based photodetectors have the ability to detect light signals from ultraviolet to far-infrared at room temperature [ 8 ]. Ultrabroadband responses at room temperature to graphene-based photodetectors have broad applications and they can also reduce the device’s cost.…”

Section: Introductionmentioning

confidence: 99%

“…It was found that growing a thin insulate layer between graphene and silicon can increase the effective potential barrier height and significantly reduce the dark current. Li et al [ 8 ] inserted a thin oxidized silicon dioxide between graphene and silicon; the dark current of the graphene/Si heterojunction photodetectors is reduced by an order of magnitude at zero bias voltage. Higher dielectric constants materials, such as HfO 2 and Al 2 O 3 , which have a better leakage current suppression in MOSFET, are also demonstrated.…”

Section: Introductionmentioning

confidence: 99%

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Dark Current Reduction and Performance Improvements in Graphene/Silicon Heterojunction Photodetectors Obtained Using a Non-Stoichiometric HfOx Thin Oxide Layer

Qu,

Fan,

Wei

2024

Nanomaterials

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Graphene/silicon heterojunction photodetectors suffer from a high dark current due to the high surface states and low barrier height at the interface, which limits their application. In this study, we introduce an HfOx interfacial layer via magnetron sputtering to address this issue. With this new structure, the dark current is reduced by six times under a bias voltage of −2 V. Under 460 nm illumination, the responsivity is 0.228A/W, the detectivity is 1.15 × 1011 cmHz1/2W−1, and the noise equivalent power is 8.75 × 10−5 pW/Hz1/2, demonstrating an excellent weak light detection capability. Additionally, the oxygen vacancies in the HfOx interfacial layer provide a conductive channel for charge carriers, resulting in a 2.03-fold increase in photocurrent and an external quantum efficiency of 76.5%. The photodetector maintains good photoresponse ability at a low bias voltage. This work showcases the outstanding performance of HfOx films as interfacial layer materials and provides a new solution for high-performance photodetectors, as well as a new path to improve the photovoltaic conversion efficiency of solar cells.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Dark Current Reduction and Performance Improvements in Graphene/Silicon Heterojunction Photodetectors Obtained Using a Non-Stoichiometric HfOx Thin Oxide Layer

Qu,

Fan,

Wei

2024

Nanomaterials

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Recent Advances in Antimony Selenide Photodetectors

Liu,

Chen,

et al. 2024

Advanced Materials

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Photodetectors (PDs) rapidly capture optical signals and convert them into electrical signals, making them indispensable in a variety of applications including imaging, optical communication, remote sensing, and biological detection. Recently, antimony selenide (Sb2Se3) has achieved remarkable progress due to its earth‐abundant, low toxicity, low price, suitable bandgap width, high absorption coefficient, and unique structural characteristics. Sb2Se3 has been extensively studied in solar cells, but there's a lack of timely updates in the field of PDs. A literature review based on Sb2Se3 PDs is urgently warranted. This review aims to provide a concise understanding of the latest progress in Sb2Se3 PDs, with a focus on the basic characteristics and the performance optimization for Sb2Se3 photoconductive‐type and photodiode‐type detectors, including nanostructure regulation, process optimization, and stability improvement of flexible devices. Furthermore, the application progresses of Sb2Se3 PDs in heart rate monitoring, and monolithic‐integrated matrix images are introduced. Finally, this review presents various strategies with potential and feasibility to address challenges for the rapid development and commercial application of Sb2Se3 PDs.

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Interface Characterization of Graphene‐Silicon Heterojunction Using Hg Probe Capacitance–Voltage Measurement

Wang,

Peng,

Jin

et al. 2024

Adv Materials Inter

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Investigating the intrinsic properties of the Schottky interface between graphene and 3D bulk silicon is crucial. However, the semiconductor technology introduces extra doping and defects in graphene, which significantly disturbs the property of the graphene‐silicon interface. Here, the interface parameters of graphene/n‐Si heterojunction are derived by the damage‐free Hg‐probe capacitance–voltage measurement. Due to its low‐density states, the Fermi level of graphene can be pushed upward, which results in a lower Schottky barrier height (ΦB0) of Hg/graphene/n‐Si (HGS) heterostructure than that of Hg/n‐Si (HS) structure. Additionally, the series resistance (Rs) of HGS becomes lower than that of HS, which can be attributed to the narrowed depletion layer width (WD) and the decreased interface state density (Nit). Furthermore, the frequency characteristic is also investigated. Because of the weak interface state charge trapping–detrapping process and the decreased Nit at high frequency, electrons will accumulate in graphene, and the Fermi level will be pushed up. Hence, the ΦB0 and Rs will decrease with increasing frequency. This study contributes to a deep understanding of the graphene/silicon heterojunction interfaces, which is crucial for designing and optimizing the new electronic and optoelectronic devices based on 2D/3D heterostructure.

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Recent Progress of Gr/Si Schottky Photodetectors

Cited by 6 publications

References 94 publications

Dark Current Reduction and Performance Improvements in Graphene/Silicon Heterojunction Photodetectors Obtained Using a Non-Stoichiometric HfOx Thin Oxide Layer

Dark Current Reduction and Performance Improvements in Graphene/Silicon Heterojunction Photodetectors Obtained Using a Non-Stoichiometric HfOx Thin Oxide Layer

Recent Advances in Antimony Selenide Photodetectors

Interface Characterization of Graphene‐Silicon Heterojunction Using Hg Probe Capacitance–Voltage Measurement

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