Recent progress of III–V quantum dot infrared photodetectors on silicon

Ren, Aobo; Yuan, Liming; Xu, Hao; Wu, Jiang; Wang, Zhiming

doi:10.1039/c9tc05738b

Cited by 56 publications

(33 citation statements)

References 88 publications

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“…[ 4–6 ] Currently, GaN, Si, InGaAs, and other semiconductors have dominated the ultraviolet to near‐infrared photodetection market. [ 7–10 ] These detectors are mostly assembled on rigid substrates and usually require relatively thick active materials for photonic detection, therefore, they are not compatible with flexible systems or suitable for low cost manufacturing.…”

Section: Figurementioning

confidence: 99%

Flexible and Self‐Powered Photodetector Arrays Based on All‐Inorganic CsPbBr₃ Quantum Dots

Shen

et al. 2020

Advanced Materials

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161

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high-performance photodetection is highly desirable in various fields, including optical communication, imaging, and environmental monitoring. [4][5][6] Currently, GaN, Si, InGaAs, and other semiconductors have dominated the ultraviolet to near-infrared photodetection market. [7][8][9][10] These detectors are mostly assembled on rigid substrates and usually require relatively thick active materials for photonic detection, therefore, they are not compatible with flexible systems or suitable for low cost manufacturing.The demand for flexible devices has driven the research in emerging functional materials that are bendable. To date, various functional materials have been explored for constructing flexible photodetectors, such as zero-dimensional (0D) semiconductor nanostructures, 2D layered materials, and perovskites. [11][12][13][14] They can be facilely transferred to arbitrary rigid substrates and directly deposited on flexible substrates, which are favorable for flexible optoelectronics. Particularly, organometal halide perovskites (OHPs) have demon strated intriguing properties, including large absorption coefficients, tunable bandgaps, long carrier diffusion length, and high carrier mobility. [15][16][17][18][19][20] Nevertheless, their organic parts Flexible devices are garnering substantial interest owing to their potential for wearable and portable applications. Here, flexible and self-powered photodetector arrays based on all-inorganic perovskite quantum dots (QDs) are reported. CsBr/KBr-mediated CsPbBr 3 QDs possess improved surface morphology and crystallinity with reduced defect densities, in comparison with the pristine ones. Systematic material characterizations reveal enhanced carrier transport, photoluminescence efficiency, and carrier lifetime of the CsBr/KBr-mediated CsPbBr 3 QDs. Flexible photodetector arrays fabricated with an optimum CsBr/KBr treatment demonstrate a high open-circuit voltage of 1.3 V, responsivity of 10.1 A W −1 , specific detectivity of 9.35 × 10 13 Jones, and on/off ratio up to ≈10 4 . Particularly, such performance is achieved under the self-powered operation mode. Furthermore, outstanding flexibility and electrical stability with negligible degradation after 1600 bending cycles (up to 60°) are demonstrated. More importantly, the flexible detector arrays exhibit uniform photoresponse distribution, which is of much significance for practical imaging systems, and thus promotes the practical deployment of perovskite products.The "Internet of Things" (IoT) has been expected to reshape or even revolutionize human daily lives. As a fundamental technology of the IoT, flexible optoelectronics, such as solar power sources, display panels, and photodetectors, have attracted substantial research interest globally. [1][2][3] Moreover,

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Section: Figurementioning

confidence: 99%

Flexible and Self‐Powered Photodetector Arrays Based on All‐Inorganic CsPbBr₃ Quantum Dots

Shen

et al. 2020

Advanced Materials

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161

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“…In order to characterize the performance of photodetectors and compare different kinds of PD, some key figure-of-merit parameters are typically used. The main ones are summarized below [ 25 , 26 ]: Quantum efficiency (QE) : is the number of carriers (electrons or holes) generated per photon of a given energy. There are two types of QE: Internal quantum efficiency (IQE) that represents the number of charge carriers collected by the PD to the number of absorbed photons of a given energy, and external quantum efficiency (EQE) that is the number of charge carriers collected by the PD to the number of incident photons of a given energy.…”

Section: Figure Of Merits For Characterizing Photodetectorsmentioning

confidence: 99%

“…As well know, the interaction between light and matter strongly depends by the photon energy and the band structure of the material constituent the photodetector. Then, effects of the light-matter interaction exploited for the photon-carrier transduction in PDs are summarized as following [ 25 , 26 , 27 ]: Photoemission or photoelectric effect : Energy of photons supplies exactly the energy gap from the conduction band to free electrons, increasing the mobility of electrons. Thermal effect : Energy of photons supplies to mid-gap transition states then an electron decay back to lower bands, generating phonon and thus heat.…”

Section: Figure Of Merits For Characterizing Photodetectorsmentioning

confidence: 99%

Integrated Photodetectors Based on Group IV and Colloidal Semiconductors: Current State of Affairs

Dardano

Ferrara

2020

Micromachines

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With the aim to take advantage from the existing technologies in microelectronics, photodetectors should be realized with materials compatible with them ensuring, at the same time, good performance. Although great efforts are made to search for new materials that can enhance performance, photodetector (PD) based on them results often expensive and difficult to integrate with standard technologies for microelectronics. For this reason, the group IV semiconductors, which are currently the main materials for electronic and optoelectronic devices fabrication, are here reviewed for their applications in light sensing. Moreover, as new materials compatible with existing manufacturing technologies, PD based on colloidal semiconductor are revised. This work is particularly focused on developments in this area over the past 5–10 years, thus drawing a line for future research.

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“…For instance, SAQD-based devices help achieve single-electron charge sensing [ 12 ], entanglement between spins and photons [ 13 , 14 ], single-photon sources [ 15 ], or single-spin [ 16 ], and help also the control of Cooper pair splitting [ 17 ], spin transport [ 18 ], spin–orbit interaction [ 19 ], g -factor [ 20 ], and Kondo effect [ 21 ]. On the other hand, SAQD technologies allow for manufacturing high density of QDs, which are crucial for implementing opto-electronic devices such as QD-based light-emitting diodes (LEDs) [ 22 ], QD-memories [ 4 , 23 ], QD-lasers [ 24 , 25 , 26 , 27 ], QD-infrared photodetectors [ 8 , 28 , 29 ], and QD-solar cells [ 30 ]. A key point in these devices is that the position of carrier level(s) can be tuned by controlling the dot size [ 2 ], and, this, by modifying the growth conditions [ 6 , 10 , 11 , 31 ].…”

Section: Introductionmentioning

confidence: 99%

Modeling Quantum Dot Systems as Random Geometric Graphs with Probability Amplitude-Based Weighted Links

Cuadra

Borge

2021

Nanomaterials

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This paper focuses on modeling a disorder ensemble of quantum dots (QDs) as a special kind of Random Geometric Graphs (RGG) with weighted links. We compute any link weight as the overlap integral (or electron probability amplitude) between the QDs (=nodes) involved. This naturally leads to a weighted adjacency matrix, a Laplacian matrix, and a time evolution operator that have meaning in Quantum Mechanics. The model prohibits the existence of long-range links (shortcuts) between distant nodes because the electron cannot tunnel between two QDs that are too far away in the array. The spatial network generated by the proposed model captures inner properties of the QD system, which cannot be deduced from the simple interactions of their isolated components. It predicts the system quantum state, its time evolution, and the emergence of quantum transport when the network becomes connected.

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Recent progress of III–V quantum dot infrared photodetectors on silicon

Abstract: Heterogeneous integration of III–V quantum dots on Si substrates for infrared photodetection is reviewed, focusing on direct epitaxial growth and bonding techniques over the last few years.

Cited by 56 publications

References 88 publications

Flexible and Self‐Powered Photodetector Arrays Based on All‐Inorganic CsPbBr₃ Quantum Dots

Flexible and Self‐Powered Photodetector Arrays Based on All‐Inorganic CsPbBr₃ Quantum Dots

Integrated Photodetectors Based on Group IV and Colloidal Semiconductors: Current State of Affairs

Modeling Quantum Dot Systems as Random Geometric Graphs with Probability Amplitude-Based Weighted Links

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Recent progress of III–V quantum dot infrared photodetectors on silicon

Abstract: Heterogeneous integration of III–V quantum dots on Si substrates for infrared photodetection is reviewed, focusing on direct epitaxial growth and bonding techniques over the last few years.

Cited by 56 publications

References 88 publications

Flexible and Self‐Powered Photodetector Arrays Based on All‐Inorganic CsPbBr3 Quantum Dots

Flexible and Self‐Powered Photodetector Arrays Based on All‐Inorganic CsPbBr3 Quantum Dots

Integrated Photodetectors Based on Group IV and Colloidal Semiconductors: Current State of Affairs

Modeling Quantum Dot Systems as Random Geometric Graphs with Probability Amplitude-Based Weighted Links

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Product

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Flexible and Self‐Powered Photodetector Arrays Based on All‐Inorganic CsPbBr₃ Quantum Dots

Flexible and Self‐Powered Photodetector Arrays Based on All‐Inorganic CsPbBr₃ Quantum Dots