Recent progress of nitride-based light emitting devices

Mukai, Takashi; Nagahama, Shin–ichi; Sano, Masahiko; Yanamoto, Tomoya; Morita, Daisuke; Mitani, Tomotsugu; Narukawa, Yukio; Yamamoto, S.; Niki, Isamu; Yamada, Motokazu; Sonobe, S.; Shioji, Shuji; Deguchi, K.; Naitou, T.; Tamaki, Hiroto; Murazaki, Yoshinori; Kameshima, M.

doi:10.1002/pssa.200303326

Cited by 48 publications

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“…The fabricated LEDs had dimension of 26 x 30 mil. 2 The light output power-current-voltage (L-I-V) characteristics of LEDs were analyzed by a probe station and an integrated sphere instrument under CW operation at room temperature. twice more than sample B [ Fig.…”

Section: -3mentioning

confidence: 99%

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Improved performance of GaN based light emitting diodes with ex-situ sputtered AlN nucleation layers

Chen

2016

AIP Advances

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Section: -3mentioning

confidence: 99%

“…1,2 Crystal quality is always one of the most important factors which affect quantum efficiency in GaN based light-emitting diodes (LEDs). Due to the lack of natural GaN substrates, GaN-based LED structures are made typically on the (0001) c-plane sapphire substrates.…”

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confidence: 99%

Improved performance of GaN based light emitting diodes with ex-situ sputtered AlN nucleation layers

Chen

2016

AIP Advances

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“…16 The decrease in the device lifetime is related to the increase in the defect density. 17 It is important to identify relationship between the degradation of the optoelectronic and low-frequency noise properties of the device to further elucidate on the phenomenon. In the current work, we performed detailed investigations on the degradation of the optoelectronic properties of GaN LEDs due to the application of a high dc stressing current.…”

Section: Introductionmentioning

confidence: 99%

Physical mechanisms for hot-electron degradation in GaN light-emitting diodes

Leung

Fong

Chan

et al. 2010

Journal of Applied Physics

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We report investigations on the degradation of GaN-based light-emitting diodes due to high dc current stress by examining two types of devices with the same fabrication procedures except for the growth conditions for the InGaN quantum wells ͑QWs͒. Higher trimethylindium and triethylgallium fluxes are used for type A devices resulting in a threefold increase in the InGaN QWs growth rate compared to type B devices. Detailed structural and optoelectronic properties of the devices are investigated by transmission electron microscopy, atomic force microscopy, thermal imaging, I-V measurements, and the low-frequency noise properties of the devices as a function of the stress time, t S . The experimental data show that the QWs in type B devices are dominated by spiral growth and they have substantially higher strain nonuniformity than type A devices. The highly strained GaN/ InGaN interfaces in device B are also responsible for the faster increase in the defect density due to hot-electron injection. The defects enhance the trap-assisted tunneling in the multiple quantum wells ͑MQWs͒ resulting in the development of hot spots among type B devices after high current stressing of the MQWs. This in turn leads to an increase in the defect generation rate resulting in a thermal run-away condition that ultimately resulted in the failure of the device. The data show that an increase in the growth rate in the InGaN layer led to the domination by the step flow growth mode over the spiral growth mode in the MQWs. This is the main reason for the reduction in the dislocation density in type A devices and hence their increase in device reliability.

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“…Therefore, ELOG technique is more and more frequently combined with HVPE (hydride vapour phase epitaxy), a cheap method of fast growing thick epi layers. As an example of such technology can be served the one developed by Nichia [9]. It consists of the following steps:…”

Section: Ganmentioning

confidence: 99%

Microstructure of III‐N semiconductors related to their applications in optoelectronics

Leszczyński

Czernetzki

Sarzynski

et al. 2005

phys. stat. sol. (c)

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There has been more than a decade since Shuji Nakamura from Japanese company Nichia constructed the first blue LED based on structure of (AlGaIn)N semiconductor and eight years since he made the first blue laser diode (LD). This work gives a survey on the current technological status with green/blue/violet/UV optoelectronics based on III-N semiconductors in relation with their microstructure. The following devices are presented: i) Low-power green and blue LEDs, ii) High-power LEDs targeting solid-state white lighting, iii) Low-power violet LDs for high definition DVD market, iv) High-power violet LDs, v) UV LEDs. The discussion will be focused on three main technological problems related to the microstructure of (AlGaIn)N layers in emitters based on III-N semiconductors: i) high density of dislocations in epitaxial layers of GaN on foreign substrates (sapphire, SiC, GaAs), ii), presence of strains, iii) atom segregation in ternary and quaternary compounds.

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Recent progress of nitride-based light emitting devices

Cited by 48 publications

References 0 publications

Improved performance of GaN based light emitting diodes with ex-situ sputtered AlN nucleation layers

Improved performance of GaN based light emitting diodes with ex-situ sputtered AlN nucleation layers

Physical mechanisms for hot-electron degradation in GaN light-emitting diodes

Microstructure of III‐N semiconductors related to their applications in optoelectronics

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