Recent Progress on Ge/SiGe Quantum Well Optical Modulators, Detectors, and Emitters for Optical Interconnects

Chaisakul, Papichaya; Vakarin, Vladyslav; Frigerio, Jacopo; Chrastina, D.; Isella, Giovanni; Vivien, Laurent; Marris‐Morini, Delphine

doi:10.3390/photonics6010024

Cited by 37 publications

(26 citation statements)

References 109 publications

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“…Regarding the optical parameters employed in simulation, the absorption coefficient data of the Ge-based material were as previously reported from Ge 0.9925 Si 0.0075 FKE modulator by Liu et al [28] at the optical wavelength of 1.55 µm. We focused on the absorption change due to the Franz-Keldysh effect between the electric field of 10 kV/cm (α~150 cm −1 ) and 95 kV/cm (α~650 cm −1 ) for 200 nm thick Ge 0.9925 Si 0.0075 layer, in order to be compatible with a ≤2 V drivable voltage of CMOS [2,9,33]. The free carrier absorption in the pand n-layers was calculated using the Drude model, with a doping concentration of~1 × 10 18 cm −3 .…”

Section: Optical Coupling Structuresmentioning

confidence: 99%

Analysis of Optical Integration between Si3N4 Waveguide and a Ge-Based Optical Modulator Using a Lateral Amorphous GeSi Taper at the Telecommunication Wavelength of 1.55 µm

2019

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We report on the theoretical investigation of using an amorphous Ge0.83Si0.17 lateral taper to enable a low-loss small-footprint optical coupling between a Si3N4 waveguide and a low-voltage Ge-based Franz–Keldysh optical modulator on a bulk Si substrate using 3D Finite-Difference Time-Domain (3D-FDTD) simulation at the optical wavelength of 1550 nm. Despite a large refractive index and optical mode size mismatch between Si3N4 and the Ge-based modulator, the coupling structure rendered a good coupling performance within fabrication tolerance of advanced complementary metal-oxide semiconductor (CMOS) processes. For integrated optical modulator performance, the Si3N4-waveguide-integrated Ge-based on Si optical modulators could simultaneously provide workable values of extinction ratio (ER) and insertion loss (IL) for optical interconnect applications with a compact footprint.

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Section: Optical Coupling Structuresmentioning

confidence: 99%

Analysis of Optical Integration between Si3N4 Waveguide and a Ge-Based Optical Modulator Using a Lateral Amorphous GeSi Taper at the Telecommunication Wavelength of 1.55 µm

2019

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“…20,137 There are various reports on the implementation of the Ge/ SiGe QCS effect-based modulators. [141][142][143][144][145][146][147][148][149][150][151][152] In one case, a Ge/SiGe QW modulator is butt-coupled to a thin SOI rib waveguide in such a way that the QWs and the rib waveguide are vertically aligned with each other to have maximum overlap. 147 The active section of the modulator, which comprised 15 pairs of Ge∕Si 0.15 Ge 0.85 QWs, is driven by a vertical PIN diode.…”

Section: (Silicon-)germaniummentioning

confidence: 99%

“…Table 1 shows a rich landscape of SiPh modulators, where SiPh is incorporating a variety of other materials for implementing performant high-speed modulators. Modulation of amplitude by the Franz-Keldysh (FK) effect, 20,38,128,[133][134][135][136][137][138][139][140] quantum-confined Stark (QCS) effect, [141][142][143][144][145][146][147][148][149][150][151][152] and electrical gating, [153][154][155][156][157][158][159][160] or the modulation of phase by employing the plasma dispersion effect, [161][162][163][164][165][166] Pockels effect, [192][193][194][195][196][197][198][199][200] and inter-band transitions,…”

Section: Introductionmentioning

confidence: 99%

Taking silicon photonics modulators to a higher performance level: state-of-the-art and a review of new technologies

et al. 2021

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Optical links are moving to higher and higher transmission speeds while shrinking to shorter and shorter ranges where optical links are envisaged even at the chip scale. The scaling in data speed and span of the optical links demands modulators to be concurrently performant and cost-effective. Silicon photonics (SiPh), a photonic integrated circuit technology that leverages the fabrication sophistication of complementary metal-oxide-semiconductor technology, is well-positioned to deliver the performance, price, and manufacturing volume for the high-speed modulators of future optical communication links. SiPh has relied on the plasma dispersion effect, either in injection, depletion, or accumulation mode, to demonstrate efficient high-speed modulators. The high-speed plasma dispersion silicon modulators have been commercially deployed and have demonstrated excellent performance. Recent years have seen a paradigm shift where the integration of various electro-refractive and electro-absorptive materials has opened up additional routes toward performant SiPh modulators. These modulators are in the early years of their development. They promise to extend the performance beyond the limits set by the physical properties of silicon. The focus of our study is to provide a comprehensive review of contemporary (i.e., plasma dispersion modulators) and new modulator implementations that involve the integration of novel materials with SiPh.

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“…Broadband optical modulators with ultra-high-speed, low-drive voltage, and hysteresis-free operation are key devices for next-generation datacom transceivers 1 . Although Si photonics is nowadays a prime candidate to fulfill these requirements 2 , 3 , graphene is rapidly becoming a major contender in several optoelectronic applications, such as ultrafast modulators 4 , 5 and silicon-integrated photodetectors 6 , 7 . Graphene-based modulators have already proven broadband optical bandwidth 1 , high speed 8 , 9 , relatively high modulation efficiencies 10 , and temperature stability 8 .…”

Section: Introductionmentioning

confidence: 99%

2D-3D integration of hexagonal boron nitride and a high-κ dielectric for ultrafast graphene-based electro-absorption modulators

et al. 2021

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Electro-absorption (EA) waveguide-coupled modulators are essential building blocks for on-chip optical communications. Compared to state-of-the-art silicon (Si) devices, graphene-based EA modulators promise smaller footprints, larger temperature stability, cost-effective integration and high speeds. However, combining high speed and large modulation efficiencies in a single graphene-based device has remained elusive so far. In this work, we overcome this fundamental trade-off by demonstrating the 2D-3D dielectric integration in a high-quality encapsulated graphene device. We integrated hafnium oxide (HfO2) and two-dimensional hexagonal boron nitride (hBN) within the insulating section of a double-layer (DL) graphene EA modulator. This combination of materials allows for a high-quality modulator device with high performances: a ~39 GHz bandwidth (BW) with a three-fold increase in modulation efficiency compared to previously reported high-speed modulators. This 2D-3D dielectric integration paves the way to a plethora of electronic and opto-electronic devices with enhanced performance and stability, while expanding the freedom for new device designs.

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Recent Progress on Ge/SiGe Quantum Well Optical Modulators, Detectors, and Emitters for Optical Interconnects

Cited by 37 publications

References 109 publications

Analysis of Optical Integration between Si3N4 Waveguide and a Ge-Based Optical Modulator Using a Lateral Amorphous GeSi Taper at the Telecommunication Wavelength of 1.55 µm

Analysis of Optical Integration between Si3N4 Waveguide and a Ge-Based Optical Modulator Using a Lateral Amorphous GeSi Taper at the Telecommunication Wavelength of 1.55 µm

Taking silicon photonics modulators to a higher performance level: state-of-the-art and a review of new technologies

2D-3D integration of hexagonal boron nitride and a high-κ dielectric for ultrafast graphene-based electro-absorption modulators

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