2017
DOI: 10.1109/jstqe.2017.2690838
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Recent Progresses in Mid Infrared Nanocrystal Optoelectronics

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Cited by 99 publications
(108 citation statements)
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“…22,31,32 This simple model considers a nondispersive heavy hole band and symmetric (i.e. same mass with opposite sign) Γ 6 and Γ 8 bands. The associated Hamiltonian includes two parameters: the Γ 6 -Γ 8 splitting (the negative band gap of bulk HgSe, bulk G E , 14,15 ) and the Kane energy (E p ).…”
Section: Resultsmentioning
confidence: 99%
“…22,31,32 This simple model considers a nondispersive heavy hole band and symmetric (i.e. same mass with opposite sign) Γ 6 and Γ 8 bands. The associated Hamiltonian includes two parameters: the Γ 6 -Γ 8 splitting (the negative band gap of bulk HgSe, bulk G E , 14,15 ) and the Kane energy (E p ).…”
Section: Resultsmentioning
confidence: 99%
“…The growth of HgX CQD has been strongly improved over the recent years . However, to integrate this material in an infrared sensor, the doping in layers of HgS(e) must be well controlled.…”
Section: Discussionmentioning
confidence: 99%
“…Colloidal quantum dots (CQD) are offering an alternative platform to revisit optoelectronics while combining high performances and low fabrication cost. In addition to display and solar cell, the use of CQD for infrared optoelectronics is attracting more and more interest . To achieve narrow energy transition as those required to get absorption in the mid infrared, narrow band gap materials can be used.…”
Section: Introductionmentioning
confidence: 99%
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“…They nevertheless present a limited tunability, typically from 800 nm to 3 μm, because of PbS bulk bandgap. Mercury chalcogenides, thanks to their semimetal nature, present a wider tunability from the near IR (1 μm) up to the far IR (100 μm) . This article is dedicated to the recent developments relative to the integration of mercury chalcogenides in photovoltaic devices, especially for the short‐wave (below 2.5 μm) and mid‐wave (3–5 μm) IR.…”
Section: Introductionmentioning
confidence: 99%