Recent progresses on physics and applications of vanadium dioxide

Liu, Kai; Lee, Sangwook; Yang, Shan; Delaire, Olivier; Wu, Junqiao

doi:10.1016/j.mattod.2018.03.029

Cited by 398 publications

(269 citation statements)

References 237 publications

(435 reference statements)

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“…Further discussion, which will be given in the third section, proves that this variation is different from a mere thermal effect. After excluding the magnetic contribution of VO 2 single layer (Figure S1c, Supporting Information), it is reasonable to believe that the effect is mainly caused by the phase change of VO 2 ‐induced modulation on NiFe. It is noteworthy that the phase change temperature of VO 2 can be tuned from 300 to nearly 400 K by methods like doping or substrate stress, which will benefit its device application …”

Section: Magnetism Modulation Induced By Vo2 Phase Changementioning

confidence: 99%

Optically Induced Phase Change for Magnetoresistance Modulation

Wei

Lin

et al. 2020

Adv Quantum Tech

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Optical methods for magnetism manipulation have been considered as a promising strategy for ultralow‐power and ultrahigh‐speed data storage and processing, which have become an emerging field of spintronics. However, a widely applicable and efficient method has rarely been demonstrated. Here, the strongly correlated electron material vanadium dioxide (VO2) is used to realize the optically induced phase change for control of the magnetism in NiFe. The NiFe/VO2 bilayer heterostructure features appreciable modulations of electrical conductivity (32%), coercivity (37.5%), and magnetic anisotropy (25%). Further analyses indicate that interfacial strain coupling plays a crucial role in the magnetic modulation. Utilizing this heterostructure, which can respond to both optical and magnetic stimuli, a phase change controlled anisotropic magnetoresistance (AMR) device is fabricated, and reconfigurable Boolean logics are implemented. As a demonstration of phase change spintronics, this work may pave the way for next‐generation opto‐electronics in the post‐Moore era.

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Section: Magnetism Modulation Induced By Vo2 Phase Changementioning

confidence: 99%

Optically Induced Phase Change for Magnetoresistance Modulation

Wei

Lin

et al. 2020

Adv Quantum Tech

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“…[50][51][52][53][54][55] The IMT results in an electrical conductivity change of three to four orders of magnitude together with a lattice structure transformation from a monoclinic to a tetragonal state (Figure 1a). [56][57][58] Various IMT triggering mechanisms, such as thermal heating, electrical bias application, and optical excitation, can provide a wide range of tunable devices. [59][60][61][62][63] During the IMT, the THz conductivity of VO 2 varies by several orders of magnitude.…”

Section: Vanadium Dioxidementioning

confidence: 99%

Dynamic Terahertz Plasmonics Enabled by Phase‐Change Materials

Jeong

Bahk

Kim

2019

Advanced Optical Materials

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Phase‐change phenomena have been an attractive research theme for decades due to the dynamic transition of material properties providing extraordinary capabilities for versatile optical device applications. Even at the terahertz (THz) frequency regime, phase‐change materials (PCMs) promote the development of dynamic devices, especially when combined with a plasmonic approach delivering strong field enhancement and localization. According to the design of plasmonic metamaterials or hybrid composites, PCMs can actively modulate the electromagnetic properties of THz waves through thermal, electrical, and optical means. In turn, THz waves can affect the PCM properties in the nonlinear regime due to the intense field strength enhancement by plasmonic structures. Here, a few types of PCMs demonstrating promising potential in THz plasmonic applications are introduced. Starting from the best‐known transition metal oxide, vanadium dioxide (VO2), which possesses an insulator‐to‐metal phase transition near room temperature, superconductors, chalcogenides, ferroelectrics, liquid crystals, and liquid metals are covered along with their phase‐change properties and the control mechanisms infused with THz plasmonic applications. The corresponding recent progress presenting how PCMs combined with plasmonic structures can demonstrate effective THz modulation is reviewed. This general overview may provide a better understanding of dynamic THz plasmonics and new ideas for future THz technology.

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“…Alternately, Zylbersztejn and Mott attributed the MIT to the Mott–Hubbard model by considering the strong electron–electron correlations, and concluded that the MIT would happen when the electron density ( n e ) and Bohr radius ( a H ) satisfy n e 1/3 a H ≈ 0.2 . As summarized in the most recent review, the physical nature of the MIT remains a long standing debate, and the difficulty in assigning the relative importance of each mechanism lies in the challenge of decoupling the structural and electronic portions of the ultrafast phase transition. Indeed, it is difficult to understand the MIT of VO 2 completely using only one model, and the cooperation of these two mechanisms is strongly supported by considering the phase transition kinetics and the mechanism may also vary by different stimuli.…”

Section: Introductionmentioning

confidence: 99%

Vanadium Dioxide: The Multistimuli Responsive Material and Its Applications

Wang

Liu

et al. 2018

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The reversible, ultrafast, and multistimuli responsive phase transition of vanadium dioxide (VO ) makes it an intriguing "smart" material. Its crystallographic transition from the monoclinic to tetragonal phases can be triggered by diverse stimuli including optical, thermal, electrical, electrochemical, mechanical, or magnetic perturbations. Consequently, the development of high-performance smart devices based on VO grows rapidly. This review systematically summarizes VO -based emerging technologies by classifying different stimuli (inputs) with their corresponding responses (outputs) including consideration of the mechanisms at play. The potential applications of such devices are vast and include switches, memories, photodetectors, actuators, smart windows, camouflages, passive radiators, resonators, sensors, field effect transistors, magnetic refrigeration, and oscillators. Finally, the challenges of integrating VO into smart devices are discussed and future developments in this area are considered.

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Recent progresses on physics and applications of vanadium dioxide

Cited by 398 publications

References 237 publications

Optically Induced Phase Change for Magnetoresistance Modulation

Optically Induced Phase Change for Magnetoresistance Modulation

Dynamic Terahertz Plasmonics Enabled by Phase‐Change Materials

Vanadium Dioxide: The Multistimuli Responsive Material and Its Applications

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