Recent review on improving mechanical durability for flexible oxide thin film transistors

Abstract

Amorphous oxide semiconductor thin film transistors (AOS TFT) have recently attracted attention as next generation display backplane materials. In this article, the current research trends and status of AOS TFTs for flexible displays are discussed. First, the degradation mechanism of AOS TFTs via bending stress is examined. In this part, we investigate how to define bending strain, i.e. how the bending stress deteriorates the TFT performance. In addition, we examine the recovery process of the mechanically degraded TFT via thermal energy. Then, we introduce various materials and structures to improve the mechanical durability of AOS TFTs. The material approach as well as the structural approach for each layer (substrate, buffer layer, electrode, active and gate insulator) are included in this paper.

Ultrasensitive Flexible κ-Phase Ga2O3 Solar-Blind Photodetector

“…Different bending conditions were created by fixing the flexible PD sample on semicircular cylinder molds with different radii of 1, 2, and 3 cm, as depicted in the insets of Figure a–c. The strain in the film in the bent state could be calculated using the following equation where η = d e / d s and X = Y e / Y s . d e and d s are the thicknesses of the epitaxy layer and substrate, respectively.…”

Wearable Gallium Oxide Solar-Blind Photodetectors on Muscovite Mica Having Ultrahigh Photoresponsivity and Detectivity with Added High-Temperature Functionalities

“…Panels a and b of Figure display the CCD camera images of flat and 5 mm bending radius condition of the photodetector. The strain in the device was calculated using the following equation: where t is half of the thickness of the film and substrate and R is the radius of curvature. The thickness of 232 nm was obtained for the Ga 2 O 3 thin film, whereas the thickness of the mica substrate was about 33 μm.…”

Compositional Engineering of Hf‐Doped InZnSnO Films for High‐Performance and Stability Amorphous Oxide Semiconductor Thin Film Transistors

“…Moreover, AOS-based TFTs could meet the requirement of the next-generation organic light emitting diode TV, such as ultra-high frame rate, larger size, and higher resolution, due to their high mobility. [16,17] Among various metal oxide semiconductor channel materials, multicomponent metal oxide semiconductors based on the In and Zn cations matrix are considered as promising candidates for channel materials for transparent TFTs, since they have inherent merits, such as high mobility, large area uniformity from their amorphous structure, and compatibility with various processing methods. [18][19][20][21][22][23] For the realization of highperformance and highly stable oxide semiconductor-based TFTs, the control of atomic ratio in the metal oxide semiconductor channel is a key factor.…”