Recent Trends in Copper Metallization

Kim, Hyung Woo

doi:10.3390/electronics11182914

Cited by 22 publications

(10 citation statements)

References 103 publications

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“…For the double‐Damascene structure (a trench overlying a via), both the trench and via need to be filled with the Ta film at the same time in industry. However, due to the practical difficulties to prepare such complex double‐Damascene structure, [ 20 ] we instead evaluated the uniformity and conformality of the PEALD Ta films separately in trenches and vias.…”

Section: Resultsmentioning

confidence: 99%

“…For the double-Damascene structure (a trench overlying a via), both the trench and via need to be filled with the Ta film at the same time in industry. However, due to the practical difficulties to prepare such complex double-Damascene structure, [20] we instead evaluated the uniformity and conformality of the PEALD Ta films separately in trenches and vias. Figure 5a,f shows the schematics and top-view SEM images of the trench and via areas, and Figure 5b,g shows the crosssectional annular bright field (ABF) scanning transmission electron microscopy (STEM) images for a trend and a via covered by the PEALD Ta films.…”

Section: Application Of Ta Films For Cu Interconnectsmentioning

confidence: 99%

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Plasma‐Enhanced Atomic Layer Deposition of Amorphous Tantalum Thin Films for Copper Interconnects Using an Organometallic Precursor

Tian,

Ding,

Chai

et al. 2023

Adv Materials Technologies

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As integrated circuits continue to shrink in size, the demand for high‐quality adhesive layers in copper Damascene interconnects has increased. However, tantalum (Ta) films, used as liners, prepared by atomic layer deposition (ALD) from metal halide precursors, are prone to corrosion and exhibit issues such as low film density and unstable performance. In this study, Ta films are successfully fabricated using a plasma‐enhanced ALD (PEALD) process with an organometallic precursor of Ta(NtBu)(NEt2)3 (TBTDET). The study of the growth conditions reveals that introducing 10% Ar in Ar‐H2 mixed gas leads to continuous high‐quality Ta films. The deposited Ta films are free of halogen impurities, which can avoid the detrimental impact on the stability of the Cu interconnects. Although the films contain some carbon and nitrogen impurities, they do not affect the film adhesive properties. Transmission electron microscopy shows that the Ta films are amorphous, and the amorphous Ta films exhibit superior barrier properties. Moreover, highly uniform Ta films can be conformally deposited into narrow interconnect structures using this PEALD process. These findings suggest that the Ta films prepared by the organometallic precursor can offer a promising solution to address the issues related to the halogen elements in the adhesive layer preparation.

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Section: Resultsmentioning

confidence: 99%

Section: Application Of Ta Films For Cu Interconnectsmentioning

confidence: 99%

Plasma‐Enhanced Atomic Layer Deposition of Amorphous Tantalum Thin Films for Copper Interconnects Using an Organometallic Precursor

Tian,

Ding,

Chai

et al. 2023

Adv Materials Technologies

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“…To be compatible with the process temperature limit of BEOL (⩽400 • C), the thinfilm coatings can be prepared by PALD. In the damascene Cu process, TaN, Ta, and Cu metals are used as the barrier, liner, and seed layers, respectively [307]. All these metals can be prepared by PALD.…”

Section: Metal Interconnectsmentioning

confidence: 99%

Atomic layer deposition of thin films: from a chemistry perspective

Chai

Wang

2023

Int. J. Extrem. Manuf.

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Atomic layer deposition (ALD) has become an indispensable thin-film technology in the contemporary microelectronics industry. The unique self-limited layer-by-layer growth feature of ALD has outstood this technology to deposit highly uniform conformal pinhole-free thin films with angstrom-level thickness control, particularly on 3D topologies. Over the years, the ALD technology has enabled not only the successful downscaling of the microelectronic devices but also numerous novel 3D device structures. As ALD is essentially a variant of chemical vapor deposition, a comprehensive understanding of the involved chemistry is of crucial importance to further develop and utilize this technology. To this end, we, in this review, focus on the surface chemistry and precursor chemistry aspects of ALD. We first review the surface chemistry of the gas-solid ALD reactions and elaboratively discuss the associated mechanisms for the film growth; then, we review the ALD precursor chemistry by comparatively discussing the precursors that have been commonly used in the ALD processes; and finally, we selectively present a few newly-emerged applications of ALD in microelectronics, followed by our perspective on the future of the ALD technology.

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“…Cu 2+ + 2e − Cu 0 (16) Electrons are produced due to the reaction of formaldehyde with OHions on the copper surface, which in turn reduce Cu 2+ ions into Cu 0 .…”

Section: Zno Thin-film-based Electroless Depositionmentioning

confidence: 99%

“…Both thin and thick metal layers are deposited to create planer interconnect lines, known as redistribution lines (RDL). Owing to its superior electrical and thermal conductivity and higher electromigration resistance, copper is extensively used as interconnect material in these applications [12][13][14][15][16]. While the critical dimensions in microelectronics are scaled below 7 nm, deposition of high-quality copper thin films is often required.…”

Section: Introductionmentioning

confidence: 99%

A critical review of copper electroless deposition on glass substrates for microsystems packaging applications

Pawar

Dixit

2022

Surface Engineering

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This article reviews the state-of-the-art electroless copper deposition on glass substrates and the associated challenges.The well-known issue of poor adhesion of electroless copper with the glass substrate was addressed and later, improved bymodifying the surface energy using a specific chemical treatment or by creating localized surface roughening. Localized surfaceregions in the glass were created by abrasive-based ultrasonic machining and hightemperature electrochemical-discharge machiningtechniques. The effect of critical process parameters on the surface roughness and morphology was explained. Both qualitative andquantitative adhesion measurement techniques, such as cross-hatch tests and 90°/180°p eel adhesion tests, were presented. Theadhesion strength is affected by the surface roughness of the substrate and residual stress build-up in the film. As the build-up stresscan be released by the post-deposition annealing, the adhesion strength is further increased. Finally, the electroless coppertechnology in making through-glass-vias and embedded redistribution lines are presented.

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Recent Trends in Copper Metallization

Cited by 22 publications

References 103 publications

Plasma‐Enhanced Atomic Layer Deposition of Amorphous Tantalum Thin Films for Copper Interconnects Using an Organometallic Precursor

Plasma‐Enhanced Atomic Layer Deposition of Amorphous Tantalum Thin Films for Copper Interconnects Using an Organometallic Precursor

Atomic layer deposition of thin films: from a chemistry perspective

A critical review of copper electroless deposition on glass substrates for microsystems packaging applications

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