2022
DOI: 10.1007/s12633-022-01694-8
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Recent Trends in Novel Semiconductor Devices

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Cited by 13 publications
(5 citation statements)
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“…The current scaling of MOSFETs toward sub‐20 nm long devices is being sustained by adopting devices using multiple gate (MuGFETs) architectures. Amongst the MuGFETs, the FinFET, made with tall and narrow silicon fins, has achieved maturity for mass production 1 . For the scaling of FinFETs, silicon nanowire and nanosheet MOS transistors (or simply nanowire and nanosheet transistors) have emerged as excellent alternatives, being extensively studied at present 1–7 .…”
Section: Introductionmentioning
confidence: 99%
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“…The current scaling of MOSFETs toward sub‐20 nm long devices is being sustained by adopting devices using multiple gate (MuGFETs) architectures. Amongst the MuGFETs, the FinFET, made with tall and narrow silicon fins, has achieved maturity for mass production 1 . For the scaling of FinFETs, silicon nanowire and nanosheet MOS transistors (or simply nanowire and nanosheet transistors) have emerged as excellent alternatives, being extensively studied at present 1–7 .…”
Section: Introductionmentioning
confidence: 99%
“…Amongst the MuGFETs, the FinFET, made with tall and narrow silicon fins, has achieved maturity for mass production. 1 For the scaling of FinFETs, silicon nanowire and nanosheet MOS transistors (or simply nanowire and nanosheet transistors) have emerged as excellent alternatives, being extensively studied at present. [1][2][3][4][5][6][7] Nanowire transistors are FinFET-like structures consisting of three gates, with the transistor Fin height (H FIN ) having a similar dimension as the Fin width (W FIN ).…”
Section: Introductionmentioning
confidence: 99%
See 1 more Smart Citation
“…Similarly, live streaming of the news, conferences, online classes, photography, indoor and outdoor shooting have increased by a significant percentage [ 2 ]. Correspondingly, to the fast improvement in the silicon industry, many computer applications are designed to improve first-rate lives and live streaming dramatically [ 3 ].…”
Section: Introductionmentioning
confidence: 99%
“…[16,[19][20][21][22] The use of PFCs is expected to increase by up to 30% by 2030 as the process steps of semiconductor fabrication continuously increase owing to the evolution of device structures into smaller dimensions and three-dimensional structures for high-performance and high-density semiconductor devices. [21,[23][24][25][26][27][28] PFC emissions are currently controlled by process optimization and abatement processes [14,16,29,30] ; however, replacing PFCs with low GPW gases could be the ultimate solution for PFC reduction.…”
mentioning
confidence: 99%