2023
DOI: 10.3390/electronics12071667
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Recess-Free E-Mode AlGaN/GaN MIS-HFET with Crystalline PEALD AlN Passivation Process

Abstract: We utilized a plasma-enhanced atomic layer deposition (PEALD) process to deposit an AlN passivation layer on AlGaN/GaN surface to enhance the polarization effects, which enabled the fabrication of an enhancement-mode (E-mode) AlGaN/GaN metal-insulator-semiconductor heterojunction field-effect transistor (MIS-HFET) without the need for a gate recess process. The AlN film deposited by PEALD exhibited a crystalline structure, not an amorphous one. The enhanced polarization effect of introducing the PEALD AlN film… Show more

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