Recombination at the interface between a metallic precipitate and a semiconductor matrix: Application to the electron-beam-induced-current contrast

Debez, M.; Tarento, R. J.; Mekki, D.E.

doi:10.1016/j.spmi.2009.01.008

Cited by 2 publications

(1 citation statement)

References 4 publications

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“…The previous studies emphasize either the recombination or the emission. In the cases of grain boundaries, 4 dislocation 5 and precipitate 6,7 defects, some models have been developed to determine self consistently the recombination parameters like the barrier height E b and the recombination velocity V R by using only the recombination Shockley-Read-Hall (S-R-H) theory and also to calculate the bendings 1 and 2 of the minority carrier quasi-Fermi level respectively in the space-charge and quasineutral regions.…”

Section: Introductionmentioning

confidence: 99%

Effect of the thermionic emission on the recombination and electron beam induced current contrast at the interface of a metallic precipitate embedded in a semiconductor matrix

et al. 2013

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The barrier height and the recombination velocity at the interface between a metallic precipitate and a semiconductor matrix are investigated with a new self consistent procedure based both on the analysis of the recombination and emission balance rates for electrons and holes and on the determination of the size-dependent electronic structure of the embedded precipitate. In the present work, the precipitate is modeled within the spherical well potential framework. The main result is the dependence of the recombination features on the electronic structure of the metal precipitate unlike the models based only on the Shockley-Read-Hall theory. The behaviors of the surface charge density on the metallic precipitate and the barrier height versus the precipitate size are similar to our previous studies. Unlike previous works, the recombination velocity reaches a constant non-zero value for sizes smaller than a critical size which is dependent on the defect concentration at the interface. The new dependencies of the recombination parameters are illustrated by the calculation of the electron beam induced current (EBIC) contrast at the interface.

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Section: Introductionmentioning

confidence: 99%

Effect of the thermionic emission on the recombination and electron beam induced current contrast at the interface of a metallic precipitate embedded in a semiconductor matrix

et al. 2013

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Enhancing InGaN-based solar cell efficiency through localized surface plasmon interaction by embedding Ag nanoparticles in the absorbing layer

et al. 2010

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The use of localized surface plasmon (LSP) interaction for significantly enhancing InGaN absorption near its band edge and the overall efficiency of an InGaN-based solar cell by embedding Ag nanoparticles (NPs) in the InGaN absorbing layer is numerically demonstrated. The generation of LSP resonance on the embedded Ag NPs and the NP scattering can produce a field distribution in the InGaN layer for enhancing absorption. It is shown that the embedded Ag NPs do not significantly affect the transport of the photo-generated carriers. The distortion of static electrical stream lines in the solar cell due to the embedded Ag NP leads to a decrease of photocurrent by only a few percents. Based on the material parameter values we use, unless the surface recombination velocity at the interface between the Ag NP and surrounding InGaN is extremely high, Ag NP embedment in the absorbing layer of an InGaN-based solar cell can enhance its efficiency by up to 27%. Such an increase is significantly larger than that achieved by depositing metal NP on the top surface of a solar cell.

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Recombination at the interface between a metallic precipitate and a semiconductor matrix: Application to the electron-beam-induced-current contrast

Cited by 2 publications

References 4 publications

Effect of the thermionic emission on the recombination and electron beam induced current contrast at the interface of a metallic precipitate embedded in a semiconductor matrix

Effect of the thermionic emission on the recombination and electron beam induced current contrast at the interface of a metallic precipitate embedded in a semiconductor matrix

Enhancing InGaN-based solar cell efficiency through localized surface plasmon interaction by embedding Ag nanoparticles in the absorbing layer

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