2014
DOI: 10.1016/j.solmat.2014.06.003
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Recombination behavior and contact resistance of n+ and p+ poly-crystalline Si/mono-crystalline Si junctions

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Cited by 205 publications
(129 citation statements)
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“…On the other hand, the application of SiO 2 models gives a thickness of 1.8 nm. In this work, we have chosen 1.4 nm, since it matches the thickness of silicon oxide film similarly prepared in previous works [13,17,22]. The thermal oxides were grown on cleaned substrates in a quartz tube furnace in pure oxygen.…”
Section: Experimental Methodsmentioning
confidence: 99%
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“…On the other hand, the application of SiO 2 models gives a thickness of 1.8 nm. In this work, we have chosen 1.4 nm, since it matches the thickness of silicon oxide film similarly prepared in previous works [13,17,22]. The thermal oxides were grown on cleaned substrates in a quartz tube furnace in pure oxygen.…”
Section: Experimental Methodsmentioning
confidence: 99%
“…A thermionic diffusion model has also been proposed for characterizing hole transport in a polysilicon emitter [10,11,12]. On the other hand, failure to achieve improved performance has been explained by the phenomenon of interfacial oxide layer break up, as observed by high resolution transmission electron microscopy [4,8,[13][14][15][16] and quantitatively confirmed by contact resistivity measurements. Recently an analytical model has been developed based on the possibility that dopants penetrate through pinholes in the oxide, creating localized highly doped regions in the crystalline silicon; current crowding associated to those local contact regions could then explain both a low minority carrier recombination and a low majority carrier resistivity [16].…”
Section: Introductionmentioning
confidence: 99%
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“…electron-and hole-collecting contacts [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16][17][18][19]. The principal aim of such contacts is selective collection of one type of carrier, while avoiding recombination of the opposite carrier type [1,2].…”
mentioning
confidence: 99%
“…In recent years, this contact system has been revisited as a passivating contact technology for silicon solar cells [4][5][6]. Studies of polysilicon emitter BJT have demonstrated that the interfacial layer plays a critical role for the enhanced performance [3,7,8].…”
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confidence: 99%