Recombination dynamics of free and bound excitons in bulk GaN

Ḿonemar, B.; Paskov, Plamen; Bergman, J. P.; Торопов, А. А.; Shubina, T. V.; Usui, Akira

doi:10.1016/j.spmi.2007.06.011

Cited by 3 publications

(3 citation statements)

References 8 publications

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“…The origin of fast and slow PL decays in group III-nitride semiconductors has been the subject of a number of previous studies [15,19,[41][42][43][44][45]. After Refs.…”

Section: Resultsmentioning

confidence: 99%

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Correlation of structural and optical properties of AlGaN films grown on SiN-treated sapphire by MOVPE

Bouzidi

Alshammari

Soltani

et al. 2021

Materials Science and Engineering: B

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“…The origin of fast and slow PL decays in group III-nitride semiconductors has been the subject of a number of previous studies [15,19,[41][42][43][44][45]. After Refs.…”

Section: Resultsmentioning

confidence: 99%

“…After Refs. [41][42][43][44], the slow and fast components are linked to the presence of two dominants recombination pathways that contribute to the decay curve. Furthermore, an increased A s /A f ratio reflects reduced non-radiative relaxation pathways.…”

Section: Resultsmentioning

confidence: 99%

Correlation of structural and optical properties of AlGaN films grown on SiN-treated sapphire by MOVPE

Bouzidi

Alshammari

Soltani

et al. 2021

Materials Science and Engineering: B

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“…5,6 At low temperatures, the photoluminescence (PL) decay of DBE transitions is determined mainly by the radiative recombination processes. However, previous studies have shown a large variation in the PL recombination time of DBEs, 7,8 which partly can be explained by a poorer quality of stressed GaN layers grown heteroepitaxially. Despite a recent progress in the synthesis of the high-quality homoepitaxial or bulk GaN layers, the value of the radiative recombination time for DBE in GaN is still uncertain.…”

Section: Introductionmentioning

confidence: 95%

Effect of silicon and oxygen doping on donor bound excitons in bulk GaN

et al. 2011

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Freestanding n-type intentionally doped GaN layers grown by halide vapor phase epitaxy (HVPE) were studied by transient photoluminescence (PL). Concentrations of silicon and oxygen were varied in the range between 10 17 and 10 18 cm −3 , as confirmed by secondary ion mass spectroscopy (SIMS). We show that a reduction of the background silicon concentration by one order of magnitude compared to the background level in undoped samples can be achieved by incorporation of oxygen during the growth. A strong band gap narrowing (BGN) of ∼6 meV was observed with increasing doping in the studied samples. The low temperature PL recombination time for donor-bound excitons (DBEs) was found to depend significantly on donor concentration. A model assuming generation of DBEs by capturing of free excitons by neutral donors explains the experimental results at low temperature. From fitting the experimental DBE lifetime to the model, the donor concentration dependence for O and Si donors could be reproduced. An effective exciton capture cross-section was found to be ∼9.4 × 10 −15 and 1.2 × 10 −14 cm 2 for silicon and oxygen donors, respectively.

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