2016
DOI: 10.1088/0957-4484/28/2/025701
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Recombination dynamics of type-II excitons in (Ga,In)As/GaAs/Ga(As,Sb) heterostructures

Abstract: Abstract. (Ga,In)As/GaAs/Ga(As,Sb) multi-quantum well heterostructures have been investigated using continuous wave and time-resolved photoluminescence spectroscopy at various temperatures. A complex interplay was observed between the excitonic type-II transitions with electrons in the (Ga,In)As well and holes in the Ga(As,Sb) well and the type-I excitons in the (Ga,In)As and Ga(As,Sb) wells. The type-II luminescence exhibits a strongly non-exponential temporal behavior below a critical temperature of T c = 70… Show more

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Cited by 6 publications
(9 citation statements)
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“…The laser excitation energy was above the barrier bandgap energy. Therefore, as discussed in detail in an earlier paper [16,20], besides the type-II PL the spatially direct exciton of the Ga(As,Sb) can be observed at room temperature as well.…”
Section: Resultsmentioning
confidence: 63%
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“…The laser excitation energy was above the barrier bandgap energy. Therefore, as discussed in detail in an earlier paper [16,20], besides the type-II PL the spatially direct exciton of the Ga(As,Sb) can be observed at room temperature as well.…”
Section: Resultsmentioning
confidence: 63%
“…The influence of the thickness of the internal GaAs barrier on the photoluminescence (PL) spectra was studied earlier for both the (Ga,In)As/GaAs/Ga(N,As) and (Ga,In)As/GaAs/ Ga(As,Sb) material systems, respectively [15,16]. For both type-II systems the CT PL increases strongly with decreasing inner barrier thickness in comparison to the emission of the direct excitons.…”
Section: Resultsmentioning
confidence: 99%
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“…At 100 K the difference of the (Ga,In)As CBO is ≈ −11 % while at 290 K it is ≈ 11 % relative to the CBO at 250 K. It is important to note, that this cannot be realized solely by a respective variation of the valence band offset (VBO) of Ga(As,Sb) without loosing the type-I character of the Ga(As,Sb) peak. It is known from lifetime measurements that the Ga(As,Sb) peak corresponds to a type-I transition at all temperatures 19 . Fig.…”
Section: Theorymentioning
confidence: 99%
“…In this system, holes are confined in the GaSb region, whereas electrons are expelled from it. [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15] Much research has been carried out to reveal and clarify the material and device properties including unique electronic states of the GaSb QDs. The spatial separation of electron and hole wavefunctions decreases the recombination of photogenerated carriers, so that a longer carrier lifetime is expected.…”
Section: Introductionmentioning
confidence: 99%