Recombination in gapless HgTe/CdHgTe quantum well heterostructure

Ya., Aleshkin V.; Dubinov, A. A.; Гавриленко, В. И.; Pavlov, S.G.; -W., H.-W.Hübers H.

doi:10.21883/pss.2022.02.54005.227

Physics of the Solid State

2022

DOI: 10.21883/pss.2022.02.54005.227

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Recombination in gapless HgTe/CdHgTe quantum well heterostructure

Aleshkin V. Ya.

A. A. Dubinov

В. И. Гавриленко

et al.

Abstract: Three recombination mechanisms of nonequilibrium carriers in gapless undoped quantum well in HgTe/CdHgTe heterostructure are considered. Dependencies of ensemble-average probability of recombination (inverse of recombination time) on concentration of nonequilibrium carriers for recombination with emission of optical phonons, recombination with emission of two-dimensional plasmons, and radiative recombination have been calculated. Key words: gapless HgTe quantum well, recombination mechanisms of nonequilibrium … Show more

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Optimal parameters of HgTe/CdHgTe multiple quantum well structures for generating two-dimensional plasmon-phonons

Aleshkin,

Rudakov,

Morozov

2023

Journal of Applied Physics

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This work is devoted to finding the optimal parameters of the HgTe/CdHgTe multi-quantum-well structure for the generation of two-dimensional plasmon-phonons under optical excitation. It is shown that a decrease in the bandgap and an increase in the number of quantum wells lead to two consequences. The first is a decrease in the nonequilibrium carrier threshold concentration and the threshold power density of optical excitation required for the plasmon-phonon gain. The second is a significant (tens of times) decrease in the effective refractive index of the generated plasmon-phonons, which improves the output of the plasmon-phonon radiation from the edge of the structure. The value of the optimal bandgap and the optimal number of quantum wells in the structure for plasmon-phonon gain are discussed.

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Optimal parameters of HgTe/CdHgTe multiple quantum well structures for generating two-dimensional plasmon-phonons

Aleshkin,

Rudakov,

Morozov

2023

Journal of Applied Physics

View full text Add to dashboard Cite

show abstract

Plasmon–phonon gain in CdHgTe structures with near-surface HgTe quantum wells

Ya Aleshkin,

Rudakov,

Dubinov

et al. 2024

J. Opt.

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The work is devoted to the study of plasmon-phonon gain in CdHgTe/HgTe structures with quantum wells (QWs) located near the boundary of the structure with vacuum/air (near-surface QWs). The issue of the influence of the distance between QWs on the plasmon-phonon gain has been studied. It has been shown that a decrease in the distance from the nearest QW to the structure boundary leads to an increase in the phase velocity of the generated plasmon-phonon and a decrease in the power absorbed by phonons in the barriers. This leads to a decrease in the threshold concentration of nonequilibrium carriers required to begin of plasmon-phonon gain under conditions of optical excitation.

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Recombination in gapless HgTe/CdHgTe quantum well heterostructure

Cited by 2 publications

References 0 publications

Optimal parameters of HgTe/CdHgTe multiple quantum well structures for generating two-dimensional plasmon-phonons

Optimal parameters of HgTe/CdHgTe multiple quantum well structures for generating two-dimensional plasmon-phonons

Plasmon–phonon gain in CdHgTe structures with near-surface HgTe quantum wells

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