Recombination in highly injected silicon

Sinton, Ronald A.; Swanson, R.M.

doi:10.1109/t-ed.1987.23095

Cited by 145 publications

(73 citation statements)

References 8 publications

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“…This coefficient is rather independent of material (typically 10 −32 -10 −30 cm 6 /s and it is in the order of 10 −31 for indirect transition in Si and Ge and GaAs [32][33][34][35]. We want to estimate the Auger effect using an approximate model that is material independent, and we therefore set C a = 10 −31 cm 6 /s for all considered materials.…”

Section: Resultsmentioning

confidence: 99%

High absorption coefficients of the CuSb(Se,Te)₂ and CuBi(S,Se)₂ alloys enable high-efficient 100 nm thin-film photovoltaics

Chen

Persson

2017

EPJ Photovolt.

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We demonstrate that the band-gap energies Eg of CuSb(Se,Te)2 and CuBi(S,Se)2 can be optimized for high energy conversion in very thin photovoltaic devices, and that the alloys then exhibit excellent optical properties, especially for tellurium rich CuSb(Se1−xTex)2. This is explained by multivalley band structure with flat energy dispersions, mainly due to the localized character of the Sb/Bi p-like conduction band states. Still the effective electron mass is reasonable small: mc ≈ 0.25m0 for CuSbTe2. The absorption coefficient α(ω) for CuSb(Se1−xTex)2 is at ω = Eg + 1 eV as much as 5-7 times larger than α(ω) for traditional thin-film absorber materials. Auger recombination does limit the efficiency if the carrier concentration becomes too high, and this effect needs to be suppressed. However with high absorptivity, the alloys can be utilized for extremely thin inorganic solar cells with the maximum efficiency ηmax ≈ 25% even for film thicknesses d ≈ 50−150 nm, and the efficiency increases to ∼30% if the Auger effect is diminished.

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Section: Resultsmentioning

confidence: 99%

High absorption coefficients of the CuSb(Se,Te)₂ and CuBi(S,Se)₂ alloys enable high-efficient 100 nm thin-film photovoltaics

Chen

Persson

2017

EPJ Photovolt.

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“…2͑b͔͒, the maximum injection with the flash lamp used is just high enough ͑Ͼ2 ϫ 10 16 cm −3 ͒ to see the onset of the lifetime drop related to a rise of the Auger recombination rate, typical of Si samples. 19 It can be seen in both plots that the effective lifetimes measured show an increase with the Ti dose implanted. The tendency of a lifetime recovery with Ti concentration agrees with the prediction of the NRR suppression when the DL impurity exceeds the delocalization transition.…”

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confidence: 86%

Lifetime recovery in ultrahighly titanium-doped silicon for the implementation of an intermediate band material

Antolín¹,

Martı́²,

Olea³

et al. 2009

Applied Physics Letters

127

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The doping of conventional semiconductors with deep level (DL) centers has been proposed to synthesize intermediate band materials. A recent fundamental study of the nonradiative recombination (NRR) mechanisms predicts the suppression of the NRR for ultrahigh DL dilutions as a result of the delocalization of the impurity electron wave functions. Carrier lifetime measurements on Si wafers doped with Ti in the 1020–1021 cm−3 concentration range show an increase in the lifetime, in agreement with the NRR suppression predicted and contrary to the classic understanding of DL action.

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“…The silicon quality is poorer at the surface and edges compared with the bulk silicon due to the silicon being diced into samples using a diamond saw. The Auger recombination term can be calculated based on equations from Sinton et al [10].…”

Section: B 6 Layer Modelmentioning

confidence: 99%

Investigating factors affecting photoconductive microwave switch performance using 3D EM simulation

Kowalczuk

Seager

Panagamuwa

2015

2015 Loughborough Antennas &Amp; Propagation Conference (LAPC)

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Recombination in highly injected silicon

Cited by 145 publications

References 8 publications

High absorption coefficients of the CuSb(Se,Te)₂ and CuBi(S,Se)₂ alloys enable high-efficient 100 nm thin-film photovoltaics

High absorption coefficients of the CuSb(Se,Te)₂ and CuBi(S,Se)₂ alloys enable high-efficient 100 nm thin-film photovoltaics

Lifetime recovery in ultrahighly titanium-doped silicon for the implementation of an intermediate band material

Investigating factors affecting photoconductive microwave switch performance using 3D EM simulation

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Recombination in highly injected silicon

Cited by 145 publications

References 8 publications

High absorption coefficients of the CuSb(Se,Te)2 and CuBi(S,Se)2 alloys enable high-efficient 100 nm thin-film photovoltaics

High absorption coefficients of the CuSb(Se,Te)2 and CuBi(S,Se)2 alloys enable high-efficient 100 nm thin-film photovoltaics

Lifetime recovery in ultrahighly titanium-doped silicon for the implementation of an intermediate band material

Investigating factors affecting photoconductive microwave switch performance using 3D EM simulation

Contact Info

Product

Resources

About

High absorption coefficients of the CuSb(Se,Te)₂ and CuBi(S,Se)₂ alloys enable high-efficient 100 nm thin-film photovoltaics

High absorption coefficients of the CuSb(Se,Te)₂ and CuBi(S,Se)₂ alloys enable high-efficient 100 nm thin-film photovoltaics