1993
DOI: 10.1063/1.353776
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Recombination in semiconductor electrodes: Investigation by the electrical and optoelectrical impedance method

Abstract: The electrical impedance and the optoelectrical impedance due to electron-hole recombination in the depletion layer and at the surface of a semiconductor electrode are calculated. It is shown that both types of impedance follow from a common formula for the ac recombination current density in the external circuit, which is derived from first principles. It is found that both the electrical and optoelectrical impedance methods provide the same information about recombination. Both methods enable one to distingu… Show more

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Cited by 28 publications
(18 citation statements)
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“…This value was confirmed by intensity modulated photocurrent spectroscopy [21]. We note that k n is about four orders of magnitude smaller than the value reported for n-GaAs, illustrating that recombination is much slower at silicon surfaces [22].…”
Section: In Situ Measurements Of Interface States At Silicon Surfacessupporting
confidence: 73%
“…This value was confirmed by intensity modulated photocurrent spectroscopy [21]. We note that k n is about four orders of magnitude smaller than the value reported for n-GaAs, illustrating that recombination is much slower at silicon surfaces [22].…”
Section: In Situ Measurements Of Interface States At Silicon Surfacessupporting
confidence: 73%
“…This shows that light modulated techniques can provide only as much information as IS. This conclusion was previously remarked by Vanmaekelbergh et al for recombination in semiconductor electrodes . One should however notice that each process will be detected at different frequencies, depending on the nature of the technique.…”
supporting
confidence: 68%
“…The state of the system will then be represented by a more general function Λ ω that reduces to eq when ω = 0 (the steady-state limit of operation). From the standpoint of modeling, Λ ω is obtained by a set of drift–diffusion equations involving small perturbation of carrier densities that can be solved in terms of ( ĵ e , V̂ , ĵ Φ ) . The use of a small perturbation ensures a linear response so that, in contrast to eq , the modulated variables (denoted by a circumflex) obey a linear relationship …”
mentioning
confidence: 99%
“…Since the modelling already assumes that no holes are captured outside the SCR, we conclude that electron-hole recombination is likely to be occurring inside the SCR, even under conditions where holes are consumed rapidly by a hole scavenger like H 2 O 2 when they arrive at the interface. The theory of IMPS for recombination in the SCR has been discussed by Vanmaekelbergh and deWit [36], but since it appears that surface recombination is normally dominant in semiconductor electrodes, the theory appears never to have been used to interpret IMPS data. These authors performed numerical calculations for a typical parameter values and found that the relaxation time constant was around 50 microseconds.…”
Section: Comparison Of the Eqe Model With Experiments In The Case Of Hmentioning
confidence: 99%