Recombination mechanisms in GaInNAs/GaAs multiple quantum wells

Abstract

Recombination processes in Ga1−xInxNyAs1−y/GaAs multiple quantum wells (MQWs) were investigated as function of the nitrogen molar fraction. We found a pronounced S-shaped behavior for the temperature-dependent shift of the photoluminescence emission similar to the ternary nitrides InGaN and AlGaN. This is explained by exciton localization at potential fluctuations. Time-resolved measurements at 4 K reveal an increase of the decay time with decreasing emission energy. A model based on lateral transfer processes to lower-energy states is proposed to explain this energy dependence. The formation of tail states in the Ga1−xInxNyAs1−y/GaAs MQWs is attributed to nitrogen fluctuations.

Excitonic mobility edge and ultra-short photoluminescence decay time in n-type GaAsN

“…An increase of the bath temperature reduces the decay times and thus the energy dispersion, in agreement with previous observations in intrinsic (In)GaAsN 26,28,29 . However, the determined maximum decay times of GaAsN:Si are signi cantly reduced in comparison to undoped GaAsN 27 .…”

“…We obtain ultrashort decay times on the high energy side and long decay times on the low-energy side of the spectrum. Similar observations were made in intrinsic (In)GaAsN epilayers 26 28 and quantum-wells 24,29 .…”

Effect of temperature on the optical properties of GaAsSbN/GaAs single quantum wells grown by molecular-beam epitaxy

“…26͒ bulk materials and in QWs heterostructures such as GaAs/InGaP, 19 CdS/ZnSe, 20 and InGaNAs/GaAs. 11,16 This phenomenon is represented by the dotted line in Fig. 2͑a͒.…”

Localization effects in InGaAsN multi-quantum well structures

“…In the photoluminescence (PL) spectra, these kind of potential fluctuations appear in terms of localization effects, e.g. affecting the exciton fine structure [9]. The purpose of the paper is to investigate the optical and structural properties of multi-quantum well (MQW) structures with varying nitrogen content and corresponding laser structures.…”