Recombination of carriers confined at In0.53Ga0.47As/InP and In0.75Ga0.25As0.5P0.5/InP interfaces

Bimberg, D.; Bauer, R.; Oertel, D.; Mycielski, Jan; Goetz, K.‐H.; Razeghi, Manijeh

doi:10.1016/0378-4363(85)90378-x

Cited by 6 publications

(1 citation statement)

References 7 publications

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“…As illustrated in Figure 4c, due to the different electron affinity energy and bandgap of InGaAs and InP, the band bending occurs near the heterointerface, forming the triangular potential well and barrier. [33][34][35] When laser pumping is applied, the photogenerated electrons are directly bound in the triangular potential well at the InGaAs/n-InP interface, forming 2D electron gas (2DEG). Holes also approach the strongly negatively charged interface and can be bound close to it via Coulomb interaction.…”

Section: Pl Mechanismmentioning

confidence: 99%

γ‐Irradiation Damage Mechanism of InGaAs/InP p–i–n Focal Plane Array Investigated by Spatially Resolved and Temperature‐Dependent Photoluminescence

Cai

Zhu

Wang

et al. 2023

Physica Status Solidi (b)

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InGaAs infrared photodetectors subjected to irradiation environments undergo microstructural modifications and concomitant degradation, yet the underlying microscopic mechanism has not been fully studied. Herein, the influence of γ irradiation (total dose of 20 krad(Si)) on an In0.53Ga0.47 As/InP p–i–n focal plane array is studied by spatially resolved and temperature‐dependent (3–290 K) photoluminescence (PL) measurements. By comparative PL studies of pre‐irradiation and post‐irradiation, the spatially resolved PL results of irradiation indicate that the in‐plane uniformity of all PL features presents bigger fluctuations, meanwhile, the results of temperature‐dependence PL demonstrate that the PL integral intensity related to impurities and interface‐bound states is significantly weakened after irradiation. This can be attributed to the enhanced migration and reaction of defects caused by γ irradiation. Some mobile defects tend to migrate to lower energy regions, such as interfaces, and form defect complexes. In addition, some impurities combine with mobile defects and form inactive impurity–defect complexes. The findings reveal the effects of low‐dose γ irradiation on InGaAs devices and may provide useful information for enhancing radiation resistance.

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Section: Pl Mechanismmentioning

confidence: 99%

γ‐Irradiation Damage Mechanism of InGaAs/InP p–i–n Focal Plane Array Investigated by Spatially Resolved and Temperature‐Dependent Photoluminescence

Cai

Zhu

Wang

et al. 2023

Physica Status Solidi (b)

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Long‐term Reliability Prediction of 935 nm LEDs Using Failure Laws and Low Acceleration Factor Ageing Tests

Deshayes

Béchou

Verdier

et al. 2005

Quality & Reliability Eng

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Numerous papers have already reported various results on electrical and optical performances of GaAs-based materials for optoelectronic applications. Other papers have proposed some methodologies for a classical estimation of reliability of GaAs compounds using life testing methods on a few thousand samples over 10 000 hours of testing. In contrast, fewer papers have studied the complete relation between degradation laws in relation to failure mechanisms and the estimation of lifetime distribution using accelerated ageing tests considering a short test duration, low acceleration factor and analytical extrapolation. In this paper, we report the results for commercial InGaAs/GaAs 935 nm packaged light emitting diodes (LEDs) using electrical and optical measurements versus ageing time. Cumulative failure distributions are calculated using degradation laws and process distribution data of optical power. A complete methodology is described proposing an accurate reliability model from experimental determination of the failure mechanisms (defect diffusion) for this technology. Electrical and optical characterizations are used with temperature dependence, short-duration accelerated tests (less than 1500 h) with an increase in bias current (up to 50%), a small number of samples (less than 20) and weak acceleration factors (up to 240).

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Optical characterization of InP/InAlAs/InP interfaces grown by MOVPE

Benyattou¹,

García²,

Moneger³

et al. 1993

Applied Surface Science

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Recombination of carriers confined at In0.53Ga0.47As/InP and In0.75Ga0.25As0.5P0.5/InP interfaces

Cited by 6 publications

References 7 publications

γ‐Irradiation Damage Mechanism of InGaAs/InP p–i–n Focal Plane Array Investigated by Spatially Resolved and Temperature‐Dependent Photoluminescence

γ‐Irradiation Damage Mechanism of InGaAs/InP p–i–n Focal Plane Array Investigated by Spatially Resolved and Temperature‐Dependent Photoluminescence

Long‐term Reliability Prediction of 935 nm LEDs Using Failure Laws and Low Acceleration Factor Ageing Tests

Optical characterization of InP/InAlAs/InP interfaces grown by MOVPE

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