Recombination of O and H Atoms on the Surface of Nanoporous Dielectrics

Рахимова, Т. В.; Braginsky, O.V.; Kovalev, A. S.; Lopaev, Dmitry; Mankelevich, Yu. A.; Malykhin, E. M.; Rakhimov, A. T.; Vasilieva, A.N.; Zyryanov, Sergey; Baklanov, Mikhaı̈l R.

doi:10.1109/tps.2009.2023991

Cited by 25 publications

(23 citation statements)

References 7 publications

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“…The comparative analysis has revealed the typical features of OSG damage in all cases . These features are mainly caused by depletion and modification of surface Si–CH 3 bonds including etching in the case of F atoms present inside OSG bulk .…”

Section: Resultsmentioning

confidence: 96%

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Synergistic effect of VUV photons and F atoms on damage and etching of porous organosilicate films

Lopaev

Zyryanov

Zotovich

et al. 2018

Plasma Processes & Polymers

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Synergistic effect between VUV photons and F atoms in both damage and etching of porous organosilicate (OSG) low-k films was studied. It was shown that both the OSG damage and etching rates by F atoms notably drop with decreasing temperature due to the existence of activation energy while the rate of the VUV-induced damage practically does not change. The joint exposure can significantly exceed the sum of the separate effects of VUV photons and F atoms. The reason is that absorbed photons energy allows F atoms to overcome the activation barrier especially under lowered temperature. A possible mechanism of F atom surface reactions assisted by VUV photons is analyzed and discussed. K E Y W O R D S fluorine, low-K dielectrics, photon-induced treatment, synergistic effect, VUV degradation Plasma Process Polym. 2018;15:e1700213.www.plasma-polymers.com

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Section: Resultsmentioning

confidence: 96%

“…OSG damage is mainly caused by exposure to active radicals, and VUV light generated in plasma . One of the most damaging steps is patterning (due to etching), which is typically conducted in fluorocarbon‐based plasma.…”

Section: Introductionmentioning

confidence: 99%

Synergistic effect of VUV photons and F atoms on damage and etching of porous organosilicate films

Lopaev

Zyryanov

Zotovich

et al. 2018

Plasma Processes & Polymers

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“…The low-k3 is suffering less than low-k2.5 and low-k2 because the small pore size reduces the depth of penetration for the oxygen radicals into the pores. 10 For the discussion below, it is important to note that the low-k2.5 and low-k2 samples exposed to O 2 plasma showed similar amount of adsorbed hydroxyl groups and moisture. Fig.…”

Section: Resultsmentioning

confidence: 99%

Study of Chemical Vapor Deposition of Manganese on Porous SiCOH Low-k Dielectrics Using Bis(ethylcyclopentadienyl)manganese

Jourdan

Krishtab

Baklanov

et al. 2012

Electrochem. Solid-State Lett.

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MnO/MnSiO 3 -based layers were formed on porous SiCOH low-k dielectrics by Chemical Vapor Deposition (CVD) of Mn from Bisethylcyclopentadienyl manganese. The oxide phase formation is driven by the moisture desorbing from the low-k films. The silicate phase is defined by silanol groups chemisorbed on the low-k surface. The experimental results suggest that formation of thin Mn-based copper diffusion barrier (pore sealing) by CVD is limited to dielectrics having a pore size smaller than the Mn precursor molecules. In the case of larger pore sizes, Mn is deposited inside the dielectric on the pores surface and the layer cannot be a diffusion barrier.

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“…14 The oxygen and hydrogen atoms were produced in O 2 and H 2 fast flow in the quartz tube by using the capacitive 13.56 MHz discharge. 14 The oxygen and hydrogen atoms were produced in O 2 and H 2 fast flow in the quartz tube by using the capacitive 13.56 MHz discharge.…”

Section: O and H Loss Probability On The Low-k Film Measurementsmentioning

confidence: 99%

“…14 The oxygen and hydrogen atoms were produced in O 2 and H 2 fast flow in the quartz tube by using the capacitive 13.56 MHz discharge. 4,14 In this way the surface loss probabilities of oxygen and hydrogen atoms on OSG low-k samples, as treated and untreated in He plasma, were measured. To measure the atom density, a platform with 40 MHz discharge exciting the atom emission and optics collecting the emission were placed behind the Teflon holder.…”

Section: O and H Loss Probability On The Low-k Film Measurementsmentioning

confidence: 99%

The effect of He plasma treatment on properties of organosilicate glass low-k films

Braginsky

Kovalev

Lopaev

et al. 2011

Journal of Applied Physics

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Articles you may be interested inEffects of plasma and vacuum-ultraviolet exposure on the mechanical properties of low-k porous organosilicate glass J. Appl. Phys. 116, 044103 (2014); 10.1063/1.4891501Bandgap measurements of low-k porous organosilicate dielectrics using vacuum ultraviolet irradiation Appl. Phys. Lett.The effect of low-pressure He plasma on properties of nanoporous organosilicate glasses low-k films with 24% and 33% open porosity is studied. The influence of ions, VUV radiation, and metastable atoms are extracted separately using a special experimental system designed for this purpose. The low-k films treated in He plasma were exposed to O or H atoms in the downstream of high-pressure O 2 or H 2 rf discharge. The changes in chemical composition and structure occurring in low-k films were measured before and after all treatments. The loss probabilities of oxygen and hydrogen atoms on the low-k film surface were measured for both treated and pristine films. It is shown that the film pretreatment in He plasma leads to the noticeable densification of the top surface layer up to complete sealing all the films studied. The sealing layer prevents O atoms from deep penetration to the film bulk and carbon extraction. The sealing mechanism related to the joint impact of low-energy ions and VUV photons with metastable atoms in He plasma is discussed in detail.

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Recombination of O and H Atoms on the Surface of Nanoporous Dielectrics

Cited by 25 publications

References 7 publications

Synergistic effect of VUV photons and F atoms on damage and etching of porous organosilicate films

Synergistic effect of VUV photons and F atoms on damage and etching of porous organosilicate films

Study of Chemical Vapor Deposition of Manganese on Porous SiCOH Low-k Dielectrics Using Bis(ethylcyclopentadienyl)manganese

The effect of He plasma treatment on properties of organosilicate glass low-k films

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